ZHCSII1F June 2016 – May 2019 DRA710 , DRA712 , DRA714 , DRA716 , DRA718
PRODUCTION DATA.
请参考 PDF 数据表获取器件具体的封装图。
In the case of NAND modules with no internal correction capability, sometimes referred to as bare NAND, the correction process can be delegated to the error location module (ELM) used in conjunction with the GPMC.
The ELM supports the following features:
For more information, see section Error Location Module (ELM) in chapter Memory Subsystem of the device TRM.