ZHCSLL4 December   2021 DP83TC814R-Q1 , DP83TC814S-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Diagnostic Tool Kit
        1. 8.3.1.1 Signal Quality Indicator
        2. 8.3.1.2 Electrostatic Discharge Sensing
        3. 8.3.1.3 Time Domain Reflectometry
        4. 8.3.1.4 Voltage Sensing
        5. 8.3.1.5 BIST and Loopback Modes
          1. 8.3.1.5.1 Data Generator and Checker
          2. 8.3.1.5.2 xMII Loopback
          3. 8.3.1.5.3 PCS Loopback
          4. 8.3.1.5.4 Digital Loopback
          5. 8.3.1.5.5 Analog Loopback
          6. 8.3.1.5.6 Reverse Loopback
      2. 8.3.2 Compliance Test Modes
        1. 8.3.2.1 Test Mode 1
        2. 8.3.2.2 Test Mode 2
        3. 8.3.2.3 Test Mode 4
        4. 8.3.2.4 Test Mode 5
    4. 8.4 Device Functional Modes
      1. 8.4.1  Power Down
      2. 8.4.2  Reset
      3. 8.4.3  Standby
      4. 8.4.4  Normal
      5. 8.4.5  Media Dependent Interface
        1. 8.4.5.1 100BASE-T1 Master and 100BASE-T1 Slave Configuration
        2. 8.4.5.2 Auto-Polarity Detection and Correction
        3. 8.4.5.3 Jabber Detection
        4. 8.4.5.4 Interleave Detection
      6. 8.4.6  MAC Interfaces
        1. 8.4.6.1 Media Independent Interface
        2. 8.4.6.2 Reduced Media Independent Interface
        3. 8.4.6.3 Reduced Gigabit Media Independent Interface
      7. 8.4.7  Serial Management Interface
      8. 8.4.8  Direct Register Access
      9. 8.4.9  Extended Register Space Access
      10. 8.4.10 Write Address Operation
        1. 8.4.10.1 MMD1 - Write Address Operation
      11. 8.4.11 Read Address Operation
        1. 8.4.11.1 MMD1 - Read Address Operation
      12. 8.4.12 Write Operation (No Post Increment)
        1. 8.4.12.1 MMD1 - Write Operation (No Post Increment)
      13. 8.4.13 Read Operation (No Post Increment)
        1. 8.4.13.1 MMD1 - Read Operation (No Post Increment)
      14. 8.4.14 Write Operation (Post Increment)
        1. 8.4.14.1 MMD1 - Write Operation (Post Increment)
      15. 8.4.15 Read Operation (Post Increment)
        1. 8.4.15.1 MMD1 - Read Operation (Post Increment)
    5. 8.5 Programming
      1. 8.5.1 Strap Configuration
      2. 8.5.2 LED Configuration
      3. 8.5.3 PHY Address Configuration
    6. 8.6 Register Maps
      1. 8.6.1 Register Access Summary
      2. 8.6.2 DP83TC814 Registers
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Physical Medium Attachment
          1. 9.2.1.1.1 Common-Mode Choke Recommendations
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Signal Traces
      2. 11.1.2 Return Path
      3. 11.1.3 Metal Pour
      4. 11.1.4 PCB Layer Stacking
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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Detailed Design Procedure

When creating a new system design with an Ethernet PHY, follow this schematic capture procedure:

  1. Select desired PHY hardware configurations in table Table 8-17.
  2. Use the Electrical Characteristics table, the Table 8-15 table and the Table 8-16 table to select the correct external bootstrap resistors.
  3. If using LEDs, ensure the correct external circuit is applied as shown in Figure 8-15.
  4. Select an appropriate clock source that adheres to either the CMOS-level oscillator or crystal resonator requirements within the Electrical Characteristics table.
  5. Select a CMC, a list of recommended CMCs are located in Table 9-2.
  6. Add common-mode termination, DC-blocking capacitors, an MDI-coupling capacitor, and an ESD shunt found in Table 9-1.
  7. Ensure that there is sufficient supply decoupling on VDDIO and VDDA supply pins.
  8. Add an external pullup resistor (tie to VDDIO) on MDIO line.
  9. If operating with SGMII, place 0.1-μF, DC-blocking capacitors between the MAC and PHY SGMII pins.

The following layout procedure must be followed:

  1. Locate the PHY near the edge of the board so that short MDI traces can be routed to the desired connector.
  2. Place the MDI external components: CMC, DC-blocking capacitors, CM termination, MDI-coupling capacitor, and ESD shunt.
  3. Create a top-layer metal pour keepout under the CMC.
  4. Ensure that the MDI TRD_M and TRD_P traces are routed such that they are 100-Ω differential.
  5. Place the clock source near the XI and XO pins.
  6. Ensure that when configured for MII, RMII, or RGMII operation, the xMII pins are routed 50-Ω and are single-ended with reference to ground.
  7. Ensure that transmit path xMII pins are routed such that setup and hold timing does not violate the PHY requirements.
  8. Ensure that receive path xMII pins are routed such that setup and hold timing does not violate the MAC requirements.
  9. Ensure that when configured for SGMII operation, the xMII RX_P, RX_M, TX_P, and TX_M pins are routed 100-Ω differential.
  10. Place the MDIO pullup close to the PHY.