ZHCSQD6 March   2022 CC2651P3

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. 功能方框图
  5. Revision History
  6. Device Comparison
  7. Pin Configuration and Functions
    1. 7.1 Pin Diagram – RGZ Package (Top View)
    2. 7.2 Signal Descriptions – RGZ Package
    3. 7.3 Pin Diagram – RKP Package (Top View)
    4. 7.4 Signal Descriptions – RKP Package
    5. 7.5 Connections for Unused Pins and Modules
  8. Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  ESD Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Power Supply and Modules
    5. 8.5  Power Consumption - Power Modes
    6. 8.6  Power Consumption - Radio Modes
    7. 8.7  Nonvolatile (Flash) Memory Characteristics
    8. 8.8  Thermal Resistance Characteristics
    9. 8.9  RF Frequency Bands
    10. 8.10 Bluetooth Low Energy - Receive (RX)
    11. 8.11 Bluetooth Low Energy - Transmit (TX)
    12. 8.12 Zigbee - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX
    13. 8.13 Zigbee - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX
    14. 8.14 Timing and Switching Characteristics
      1. 8.14.1 Reset Timing
      2. 8.14.2 Wakeup Timing
      3. 8.14.3 Clock Specifications
        1. 8.14.3.1 48 MHz Crystal Oscillator (XOSC_HF)
        2. 8.14.3.2 48 MHz RC Oscillator (RCOSC_HF)
        3. 8.14.3.3 32.768 kHz Crystal Oscillator (XOSC_LF)
        4. 8.14.3.4 32 kHz RC Oscillator (RCOSC_LF)
      4. 8.14.4 Synchronous Serial Interface (SSI) Characteristics
        1. 8.14.4.1 Synchronous Serial Interface (SSI) Characteristics
        2.       37
      5. 8.14.5 UART
        1. 8.14.5.1 UART Characteristics
    15. 8.15 Peripheral Characteristics
      1. 8.15.1 ADC
        1. 8.15.1.1 Analog-to-Digital Converter (ADC) Characteristics
      2. 8.15.2 DAC
        1. 8.15.2.1 Digital-to-Analog Converter (DAC) Characteristics
      3. 8.15.3 Temperature and Battery Monitor
        1. 8.15.3.1 Temperature Sensor
        2. 8.15.3.2 Battery Monitor
      4. 8.15.4 Comparator
        1. 8.15.4.1 Continuous Time Comparator
      5. 8.15.5 GPIO
        1. 8.15.5.1 GPIO DC Characteristics
    16. 8.16 Typical Characteristics
      1. 8.16.1 MCU Current
      2. 8.16.2 RX Current
      3. 8.16.3 TX Current
      4. 8.16.4 RX Performance
      5. 8.16.5 TX Performance
      6. 8.16.6 ADC Performance
  9. Detailed Description
    1. 9.1  Overview
    2. 9.2  System CPU
    3. 9.3  Radio (RF Core)
      1. 9.3.1 Bluetooth 5.2 Low Energy
      2. 9.3.2 802.15.4 (Zigbee and 6LoWPAN)
    4. 9.4  Memory
    5. 9.5  Cryptography
    6. 9.6  Timers
    7. 9.7  Serial Peripherals and I/O
    8. 9.8  Battery and Temperature Monitor
    9. 9.9  µDMA
    10. 9.10 Debug
    11. 9.11 Power Management
    12. 9.12 Clock Systems
    13. 9.13 Network Processor
  10. 10Application, Implementation, and Layout
    1. 10.1 Reference Designs
  11. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
      1. 11.2.1 SimpleLink™ Microcontroller Platform
    3. 11.3 Documentation Support
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
  • RKP|40
散热焊盘机械数据 (封装 | 引脚)
订购信息

Application, Implementation, and Layout

Note:

以下应用部分中的信息不属于TI 器件规格的范围,TI 不担保其准确性和完整性。TI 的客 户应负责确定器件是否适用于其应用。客户应验证并测试其设计,以确保系统功能。

For general design guidelines and hardware configuration guidelines, refer to CC13xx/CC26xx Hardware Configuration and PCB Design Considerations Application Report.

For optimum RF performance, especially when using the high-power PA, it is important to accurately follow the reference design with respect to component values and layout. Failure to do so may lead to reduced RF performance due to balun mismatch. The amplitude- and phase balance through the balun must be <1 dB and <6 degrees, respectively.

PCB stack-up is also critical for proper operation. The CC2651P3 EVMs and characterization boards use a finished thickness between the top layer (RF signals) and layer 2 (ground plane) of 175 µm. It is very important to use the same substrate thickness, or slightly thicker, in an end product implementing the CC2651P3 device.