5.11.1.2 IO and Analog Voltage Decoupling Capacitors
Table 5-9 summarizes the power-supply decoupling capacitor recommendations.
Table 5-9 Power-Supply Decoupling Capacitor Characteristics
| PARAMETER |
TYP |
UNIT |
| CVDDA_ADC0 |
10 |
nF |
| CVDDA_ADC1 |
10 |
nF |
| CVDDA1P8V_USB0(1) |
2.21 |
µF |
| CCVDDA3P3V_USB0 |
10 |
nF |
| CVDDA1P8V_USB1 |
10 |
nF |
| CVDDA3P3V_USB1 |
10 |
nF |
| CVDDS(2) |
10.04 |
μF |
| CVDDS_DDR |
(3) |
|
| CVDDS_OSC |
10 |
nF |
| CVDDS_PLL_DDR |
10 |
nF |
| CVDDS_PLL_CORE_LCD |
10 |
nF |
| CVDDS_SRAM_CORE_BG(4) |
10.01 |
µF |
| CVDDS_SRAM_MPU_BB(5) |
10.01 |
µF |
| CVDDS_PLL_MPU |
10 |
nF |
| CVDDS_RTC |
10 |
nF |
| CVDDS_CLKOUT |
10 |
nF |
| CVDDS3P3V_IOLDO |
10 |
nF |
| CVDDSHV1(6) |
10.02 |
μF |
| CVDDSHV2(7) |
10.06 |
μF |
| CVDDSHV3(7) |
10.06 |
μF |
| CVDDSHV5(6) |
10.02 |
μF |
| CVDDSHV6(7) |
10.06 |
μF |
| CVDDSHV7(6) |
10.02 |
μF |
| CVDDSHV8(6) |
10.02 |
μF |
| CVDDSHV9(6) |
10.02 |
μF |
| CVDDSHV10(6) |
10.02 |
μF |
| CVDDSHV11(6) |
10.02 |
μF |
- Typical values consist of 1 capacitor of 2.2 μF and 1 capacitor of 10 nF.
- Typical values consist of 1 capacitor of 10 μF and 4 capacitors of 10 nF.
- For more details on decoupling capacitor requirements for the DDR3 and DDR3L memory interface, see Section 5.12.8.2.1.3.6 and Section 5.12.8.2.1.3.7 when using DDR3 and DDR3L memory devices.
- VDDS_SRAM_CORE_BG supply powers an internal LDO for SRAM supplies. Inrush currents could cause voltage drop on the VDDS_SRAM_CORE_BG supplies when the SRAM LDO is enabled after powering up VDDS_SRAM_CORE_BG terminals. TI recommends placing a 10-μF capacitor close to the terminal and routing it with the widest traces possible to minimize the voltage drop on VDDS_SRAM_CORE_BG terminals.
- VDDS_SRAM_MPU_BB supply powers an internal LDO for SRAM supplies. Inrush currents could cause voltage drop on the VDDS_SRAM_MPU_BB supplies when the SRAM LDO is enabled after powering up VDDS_SRAM_MPU_BB terminals. TI recommends placing a 10-μF capacitor close to the terminal and routing it with the widest traces possible to minimize the voltage drop on VDDS_SRAM_MPU_BB terminals.
- Typical values consist of 1 capacitor of 10 μF and 2 capacitors of 10 nF.
- Typical values consist of 1 capacitor of 10 μF and 6 capacitors of 10 nF.