The LMG3410 Single-Channel Gallium-Nitride (GaN) Power Stage contains a 70-mΩ, 600-V GaN power transistor, an optimized driver, and built-in protection, in a low inductance 8-mm by 8-mm QFN package. The LMG3410 power stage coupled with TIs analog and digital power-conversion controllers enables designers to create smaller, more efficient and higher-performing designs compared to silicon FET-based solutions. These benefits are especially important in isolated high-voltage industrial, telecom, enterprise computing and renewable energy applications.
With its integrated driver and features such as zero reverse-recovery current, the LMG3410 provides reliable performance in hard-switching applications where it can dramatically reduce switching losses by as much as 80 percent. Unlike stand-alone GaN FETs, the easy-to-use LMG3410 integrates built-in intelligence for temperature, current and undervoltage lockout (UVLO) fault protection.
Finally, externally-adjustable slew rate and a low-inductance QFN package minimize switching loss, voltage ringing, and electrical noise generation
All trademarks are the property of their respective owners.
|VDS (Max) (V)|
|ID (Max) (A)|
|RDS (on) (Milliohm)|
|Prop Delay (ns)|