ZHCU578 October   2018

 

  1.    说明
  2.    资源
  3.    特性
  4.    应用
  5.    设计图像
  6. 1System Description
    1. 1.1 Key System Specifications
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1 TPS92692-Q1
    3. 2.3 LM74700
    4. 2.4 System Design Theory
      1. 2.4.1 Design Procedure
        1. 2.4.1.1  Operating Parameters, Duty Cycle
        2. 2.4.1.2  Setting the Switching Frequency
        3. 2.4.1.3  Inductor Value Calculation
        4. 2.4.1.4  Peak Inductor Current
        5. 2.4.1.5  Calculating RIS (R9)
        6. 2.4.1.6  Minimum Output Capacitance
        7. 2.4.1.7  Setting the LED Current
        8. 2.4.1.8  Soft-Start Capacitor
        9. 2.4.1.9  Overvoltage Protection (OVP)
        10. 2.4.1.10 Main N-Channel MOSFET Selection
        11. 2.4.1.11 Rectifier Diode Selection
        12. 2.4.1.12 Thermal Protection
      2. 2.4.2 Designing for Low EMI
        1. 2.4.2.1 EMI Performance
        2. 2.4.2.2 EMI Filter Design
          1. 2.4.2.2.1 Additional EMI Considerations
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
    2. 3.2 Testing and Results
      1. 3.2.1 Test Setup
      2. 3.2.2 Test Results
        1. 3.2.2.1 Nominal Operation Waveforms
          1. 3.2.2.1.1 Loop Stability Measurements Block Diagram
        2. 3.2.2.2 Efficiency and Line Regulation: Done for different power level for Boost (Hi Beam and Lo Beam) or Boost to Battery for Lo Beam only
        3. 3.2.2.3 Thermal Scan
  9. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
  10. 5Related Documentation
    1. 5.1 商标

4.2 Bill of Materials

To download the bill of materials (BOM), see the design files at PMP15027.

Table 4. Bill of Materials

Designator Quantity Value Description Part Number Manufacturer
!PCB1 1 Printed Circuit Board TIDA-050002 Any
C1 1 0.047 µF CAP, CERM, 0.047 µF, 100 V, +/- 10%, X7R, 1206 C3216X7R2A473K115AA TDK
C2, C3, C5, C6, C10, C11, C27, C30, C32, C33, C34 11 4.7 µF CAP, CERM, 4.7 µF, 100 V, +/- 10%, X7S, 1210 C3225X7S2A475K200AE TDK
C4 1 0.1 µF CAP, CERM, 0.1 µF, 100 V, +/- 10%, X7R, 0805 C2012X7R2A104K125AA TDK
C7, C31 2 0.1 µF CAP, CERM, 0.1 µF, 100 V, +/- 10%, X7R, 1206 C3216X7R2A104K160AA TDK
C8, C13 2 2.2 µF CAP, CERM, 2.2 µF, 16 V, +/- 20%, X7S, AEC-Q200 Grade 1, 0603 CGA3E1X7S1C225M080AC TDK
C9 1 0.47 µF CAP, CERM, 0.47 µF, 100 V, +/- 10%, X7R, AEC-Q200 Grade 1, 1206 CGA5L2X7R2A474K160AA TDK
C12, C16 2 0.1 µF CAP, CERM, 0.1 µF, 25 V, +/- 10%, X8R, AEC-Q200 Grade 0, 0603 CGA3E2X8R1E104K080AA TDK
C14, C15, C23 3 1000 pF CAP, CERM, 1000 pF, 100 V, +/- 5%, C0G/NP0, 0603 C1608C0G2A102J080AA TDK
C17 1 0.27 µF CAP, CERM, 0.27 µF, 16 V, +/- 10%, X7R, 0603 C0603C274K4RACTU Kemet
C18 1 0.22 µF CAP, CERM, 0.22 µF, 16 V, +/- 10%, X7R, AEC-Q200 Grade 1, 0603 CL10B224KO8VPNC Samsung
C19 1 0.033 µF CAP, CERM, 0.033 µF, 100 V, +/- 10%, X7S, AEC-Q200 Grade 1, 0603 CGA3E3X7S2A333K080AB TDK
C20, C22 2 0.01 µF CAP, CERM, 0.01 µF, 100 V, +/- 10%, X8R, 0603 C1608X8R2A103K TDK
C21 1 4700pF CAP, CERM, 4700 pF, 100 V, +/- 10%, X7R, AEC-Q200 Grade 1, 0603 CGA3E2X7R2A472K080AA TDK
C24 1 10pF CAP, CERM, 10 pF, 50 V, +/- 5%, C0G/NP0, AEC-Q200 Grade 1, 0603 CGA3E2C0G1H100D080AA TDK
C25 1 0.1 µF CAP, CERM, 0.1 µF, 100 V, +/- 10%, X7R, 1206 GRM319R72A104KA01D MuRata
C26 1 0.022 µF CAP, CERM, 0.022 µF, 100 V, +/- 10%, X7R, AEC-Q200 Grade 1, 0603 CGA3E2X7R2A223K080AA TDK
C28 1 0.01 µF CAP, CERM, 0.01 µF, 50 V, +/- 5%, C0G/NP0, 0603 C1608NP01H103J080AA TDK
C29 1 1 µF CAP, CERM, 1 µF, 16 V, +/- 10%, X7R, 0805 C0805C105K4RACTU Kemet
C35 1 0.22 µF CAP, CERM, 0.22 µF, 25 V, +/- 10%, X8R, AEC-Q200 Grade 0, 0603 CGA3E3X8R1E224K080AB TDK
D1 1 100V Diode, Schottky, 100 V, 3 A, AEC-Q101, PowerDI5 PDS3100Q-13 Diodes Inc.
D2 1 8.2V Diode, Zener, 8.2 V, 200 mW, SOD-323 MMSZ5237BS-7-F Diodes Inc.
D3 1 100V Diode, Schottky, 100 V, 8 A, AEC-Q101, TO-277A FSV8100V Fairchild Semiconductor
D4 1 15V Diode, Zener, 15 V, 200 mW, SOD-323 MMSZ5245BS-7-F Diodes Inc.
GND, TP1, TP2, TP3, VIN 5 Terminal, Turret, TH, Double 1502-2 Keystone
H13 1 HEATSINK DC/DC HALF BRICK VERT 518-95AB Wakefield Solutions
J1, J2 2 Terminal Block Receptacle, 3x1, 3.81mm, R/A, TH 1727023 Phoenix Contact
L1 1 3.3uH Inductor, Shielded, Composite, 3.3 uH, 15.1 A, 0.01 ohm, SMD XAL7070-332MEB Coilcraft
L2 1 22uH Inductor, Shielded, Composite, 22 uH, 14 A, 0.0145 ohm, SMD XAL1510-223MEB Coilcraft
L3 1 Coupled inductor, 2.8 A, 0.055 ohm, SMD ACM4520-421-2P-T000 TDK
L4, L6 2 220 ohm Ferrite Bead, 220 ohm @ 100 MHz, 2 A, 0805 782853221 Wurth Elektronik
L5 1 Coupled inductor, 8 A, 0.006 ohm, SMD ACM1211-701-2PL-TL01 TDK
Q1 1 -100V MOSFET, P-CH, -100 V, -4.6 A, DPAK ZXMP10A16KTC Diodes Inc.
Q3A 1 80V MOSFET, N-CH, 80 V, 75 A, AEC-Q101, DDPAK BUK9611-80E NXP Semiconductor
Q4 1 100V MOSFET, N-CH, 100 V, 3.8 A, 8-PowerVDFN DMN10H120SFG-13 Diodes Inc.
Q5, Q6, Q7 3 100V MOSFET, N-CH, 100 V, 1 A, SOT-23 AO3442 AOS
Q8 1 -60V MOSFET, P-CH, -60 V, -3.6 A, PowerPAK 1212 SI7415DN-T1-GE3 Vishay-Siliconix
Q9 1 60V MOSFET, N-CH, 60 V, 287 A, AEC-Q101, DFN5 5x6mm NVMFS5C604NLT1G ON Semiconductor
R1 1 2.00k RES, 2.00 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW06032K00FKEA Vishay-Dale
R2 1 0.1 RES, 0.1, 1%, 0.33 W, AEC-Q200 Grade 1, 1210 ERJ-L14KF10CU Panasonic
R3 1 150k RES, 150 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW0603150KFKEA Vishay-Dale
R4 1 0 RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW06030000Z0EA Vishay-Dale
R5 1 10.0 RES, 10.0, 1%, 0.25 W, AEC-Q200 Grade 0, 1206 CRCW120610R0FKEA Vishay-Dale
R6 1 100 RES, 100, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW0603100RFKEA Vishay-Dale
R8 1 3.01k RES, 3.01 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW06033K01FKEA Vishay-Dale
R9 1 0.008 RES, 0.008, 1%, 2 W, AEC-Q200 Grade 0, 2512 CRE2512-FZ-R008E-2 Bourns
R7,R10, R16, R18 4 100k RES, 100 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW0603100KFKEA Vishay-Dale
R11 1 750k RES, 750 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW0603750KFKEA Vishay-Dale
R12 1 28.7k RES, 28.7 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW060328K7FKEA Vishay-Dale
R13, R20 2 1.00k RES, 1.00 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW06031K00FKEA Vishay-Dale
R14 1 1.43k RES, 1.43 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW06031K43FKEA Vishay-Dale
R15 1 49.9k RES, 49.9 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW060349K9FKEA Vishay-Dale
R17, R20 2 27.4k RES, 27.4 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW060327K4FKEA Vishay-Dale
R19 1 1.00k RES, 1.00 k, 1%, 0.25 W, AEC-Q200 Grade 0, 1206 CRCW12061K00FKEA Vishay-Dale
R23, R24 2 10 RES, 10, 5%, 0.1 W, AEC-Q200 Grade 0, 0603 CRCW060310R0JNEA Vishay-Dale
U1 1 LED Controller With Spread Spectrum Frequency Modulation and Internal PWM Generator, PWP0020D (TSSOP-20) TPS92692QPWPRQ1 Texas Instruments
U2 1 Low Iq Always ON Smart Diode Controller, DBV0006A (SOT-23-6) LM74700QDBVTQ1 Texas Instruments