SLAK024A January   2019  – March 2024 TPS73801-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects
  6. 3Test Device and Evaluation Board Information
  7. 4Irradiation Facility and Setup
  8. 5Test Setup and Procedures
  9. 6Single-Event-Burnout (SEB) and Single-Event-Latch-up (SEL)
    1. 6.1 Single-Event-Burnout (SEB)
    2. 6.2 Single-Event-Latch-up (SEL)
  10. 7SET Results
  11. 8Summary
  12.   A Confidence Interval Calculations
  13.   B References
  14.   C Revision History

2 Single-Event Effects

The primary concerns for the TPS73801-SEP are its resilience against the destructive single event effects (DSEE): single event burnout (SEB) and single-event latch-up (SEL). A bipolar junction transistor can suffer SEB at voltages lower than the open circuit collector-emitter voltages (BVCEO) (1)(2). The TPS73801-SEP was tested up to the recommended maximum input voltage. No current increment was seen demonstrating that the TPS73801-SEP is SEB-free across the full electrical specifications and up to 43MeV-cm2 / mg with fluences of 107 ions / cm2 and room temperature.

The TPS73801-SEP is a bipolar-only process; because of this the LDO is virtually SEL-free. However there is a remote possibility of SEL in non-vertical structures and for that reason the device was checked for SEL. The TPS73801-SEP did not show any SEL with heavy-ions up to 43MeV-cm2 / mg and fluences of 107 ions / cm2 and a die temperature of 125°C.

For power devices the power integrity is also a concern, stable outputs are mandatory and single event transients (SETs) must be bounded and have fast recovery time. The TPS73801-SEP was characterized for ±5% deviation from nominal voltage at VOUT of 2.5V and 12V. Only 7 events that exceed the ±5% were observed on 16 experiments. The events were observed at VOUT = 2.5V. Upper bound cross section using the MTBF method (shown in Appendix A) at 95% confidence interval is presented. Typical time domain transients plots are shown in Section 7. A histogram for the deviation from the nominal voltage on percentage is shown in Figure 7-1.