ZHCSCO8E June   2014  – May 2019 TPS65283 , TPS65283-1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 典型电路原理图
    1.     效率，Vin = 12V，PSM
  5. 5 修订历史记录
  6. 6 说明 （续）
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 Handling Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Power Switch Detailed Description
        1. 9.3.1.1 Overcurrent Condition
        2. 9.3.1.2 Reverse Current and Voltage Protection
        3. 9.3.1.3 nFAULT Response
        4. 9.3.1.4 UVLO
        5. 9.3.1.5 Enable and Output Discharge
        6. 9.3.1.6 Power Switch Input and Output Capacitance
        7. 9.3.1.7 Programming the Current-Limit Threshold
      2. 9.3.2 Buck DC-DC Converter Detailed Description
        1. 9.3.2.1  Output Voltage
        2. 9.3.2.2  Adjustable Switching Frequency
        3. 9.3.2.3  Synchronization
        4. 9.3.2.4  Error Amplifier
        5. 9.3.2.5  Slope Compensation
        6. 9.3.2.6  Enable and Adjusting UVLO
        7. 9.3.2.7  Internal V7V Regulator
        8. 9.3.2.8  Short Circuit Protection
          1. 9.3.2.8.1 High-Side MOSFET Overcurrent Protection
          2. 9.3.2.8.2 Low-Side MOSFET Overcurrent Protection
        9. 9.3.2.9  Bootstrap Voltage (BST) and Low Dropout Operation
        10. 9.3.2.10 Output Overvoltage Protection (OVP)
        11. 9.3.2.11 Power Good
        12. 9.3.2.12 Power-Up Sequencing
        13. 9.3.2.13 Thermal Performance
    4. 9.4 Device Functional Modes
      1. 9.4.1 Operation With VIN < 4.5 V (Minimum VIN)
      2. 9.4.2 Operation With EN Control
      3. 9.4.3 Operation at Light Loads
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Output Voltage Setting
        2. 10.2.2.2 Bootstrap Capacitor Selection
        3. 10.2.2.3 Inductor Selection
        4. 10.2.2.4 Output Capacitor Selection
        5. 10.2.2.5 Input Capacitor Selection
        6. 10.2.2.6 Minimum Output Voltage
        7. 10.2.2.7 Compensation Component Selection
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 PCB Layout Recommendation
      2. 12.1.2 Power Dissipation and Junction Temperature
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关链接
    2. 13.2 商标
    3. 13.3 静电放电警告
    4. 13.4 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.5 Electrical Characteristics

TJ = 25°C, VIN1 = VIN2 = 12 V, ƒSW = 500 kHz, RPG1 = RPG2 = RnFAULTx = 100 kΩ, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT SUPPLY
VIN Input voltage range 4.5 18 V
IDDSDN Shutdown supply current VSW_EN = VEN1 = VEN2 = 0 5.5 10 µA
IDDQ_NSW None switching quiescent current EN1 = EN2 = high, VFB1 = VFB2 = 1 V,
With buck1 and buck2 not switching		 0.5 mA
UVLO Input voltage undervoltage lockout (UVLO) VIN1 rising 4 4.25 4.5 V
VIN1 falling 3.5 3.75 4 V
Hysteresis 500 mV
V7V Internal biasing supply VV7V load current = 0 A, VIN1 = 12 V 6.05 6.3 6.49 V
IOCP_V7V Current limit of V7V LDO 180 mA
OSCILLATOR
ƒSW Switching frequency ROSC = 100 kΩ 400 500 600 kHz
TSYNC_w Clock sync minimum pulse width 80 ns
VSYNC_HI Clock sync high threshold 2 V
VSYNC_LO Clock sync low threshold 0.4 V
VSYNC_D Clock falling edge to LX rising edge delay 120 ns
FSYNC Clock sync frequency range 200 2000 kHz
BUCK1/BUCK2 CONVERTER
VFB Feedback voltage VCOMP1 = VCOMP2 = 1.2 V, TJ = 25°C 0.594 0.6 0.606 V
VCOMP1 = VCOMP2 = 1.2 V, TJ = –40°C to 125°C 0.588 0.6 0.612 V
Gm_EA Error amplifier transconductance –2 µA < ICOMPX < 2 µA 300 µS
Gm_SRC COMP1/COMP2 voltage to inductor current Gm(1) ILX1 = ILX2 = 0.5 A 7.4 A/V
VENXH EN1, EN2 high level input voltage 1.2 1.26 V
VENXL EN1, EN2 low-level input voltage 1.1 1.15 V
IENX EN1, EN2 pullup current VEN1 = VEN2 = 1 V 3.6 µA
IENX EN1, EN2 pullup current VEN1 = VEN2 = 1.5 V 6.6 µA
IENhys IEN1 / IEN2 hysteresis current 3 µA
TON_MIN Minimum on time TJ = 25°C 80 100 ns
TJ = –40°C to 125°C 120
TSS_INT Internal soft-start time 2.4 ms
ILIMIT1 Buck1 peak inductor current limit 4.25 5 5.75 A
ILIMITS1 Buck1 low-side sink current limit 1.7 A
ILIMIT2 Buck2 peak inductor current limit 3.2 3.75 4.3 A
ILIMITS2 Buck2 low side sink current limit 1.3 A
Rdson1_HS High-side FET on-resistance in Buck1 V7V = 6.25 V 100 mΩ
Rdson1_LS Low-side FET on-resistance in buck1 V7V = 6.25 V 65 mΩ
Rdson2_HS High-side FET on-resistance in Buck2 V7V = 6.25 V 140 mΩ
Rdson2_LS Low-side FET on-resistance in buck2 V7V = 6.25 V 95 mΩ
THICCUP_WAIT Hiccup wait time 4 ms
THICCUP_RE Hiccup time before restart 64 ms
POWER GOOD
Vth_PG Feedback voltage threshold VFB1 / VFB2 UV falling 92.5%
VFB1 / VFB2 UV rising 95%
VFB1 / VFB2 OV rising 107.5%
VFB1 / VFB2 OV falling 105%
TDEGLITCH(PGF) PG1/PG2 deglitch time (falling edge) 1 ms
TDEGLITCH(PGR) PG1/PG2 deglitch time (rising edge) 2 ms
IPG Power Good pin leakage VFB1 = VFB2 = 0.6 V 1 µA
VLOW_PG PG1/PG2 pin low voltage Force FB1 = FB2 = 0.5 V, sink 1 mA to PG1/PG2 pin 0.4 V
POWER DISTRIBUTION SWITCH
VSWIN Power switch input voltage range 2.4 6 V
IDDQH Supply current, device enabled No load on SW_OUT, RSET = 20 kΩ 140 µA
VUVLO_SW Power switch input undervoltage lockout VSWIN rising 2.15 2.25 2.35 V
VSWIN falling 2.05 2.15 2.25 V
Hysteresis 100 mV
RDSON_SW Power switch NMOS on-resistance RGE package, VSWIN = 5 V, IOUT = 0.5 A,
TJ = 25°C, including bond wire resistance		 60 mΩ
RGE package, VSWIN = 2.5 V, IOUT = 0.5 A,
TJ = 25°C, including bond wire resistance		 60 mΩ
tD_on Turn-on delay time VSWIN = 5 V, CL= 10 µF, RL= 100 Ω 1.1 ms
tD_off Turn-off delay time (See Figure 1) 1.2 ms
tr Output rise time 0.65 ms
tf Output fall time 1.54 ms
IOS Current limit threshold (maximum DC current delivered to load) and short circuit current, OUT connect to ground RSET = 14.3 kΩ 1.575 1.75 1.925 A
RSET = 20 kΩ 1.125 1.25 1.375
RSET = 50 kΩ 0.4 0.5 0.6
RSET = 80.6 kΩ, TJ = 0°C to 90°C 0.15 0.325 0.5
TDEGLITCH(OCP) Switch overcurrent fault deglitch Fault assertion or deassertion due to overcurrent condition 6 8 10
ms
VL_nFAULT nFAULT pin output low voltage InFAULT = 1 mA 150 300 mV
VENSWH SW_EN high-level input voltage 2 V
VENSWL SW_EN low-level input voltage 0.4 V
RDIS Discharge resistance(2) VSW_IN = 5 V, VSW_EN = 0 V 100 Ω
THERMAL SHUTDOWN
TTRIP_BUCK Thermal protection trip point Temperature rising 160 °C
THYST_BUCK Hysteresis 20
TTRIP_SW Power switch thermal protection trip point
Power switch in overcurrent condition		 Temperature rise 145 °C
THYST_SW Hysteresis 20
(1) Specified by design.
(2) The discharge function is active when the device is disabled (when enable is deasserted). The discharge function offers a resistive discharge path for the external storage capacitor.
TPS65283 TPS65283-1 power_switches_test_circuit_voltage_waveforms_slvscl3.gifFigure 1. Power Switches Test Circuit and Voltage Waveforms
TPS65283 TPS65283-1 response_time_short_circuit_waveform_slvscl3.gifFigure 2. Response Time to Short Circuit Waveform
TPS65283 TPS65283-1 output_voltage_vs_current_limit_threshold_slvscl3.gifFigure 3. Output Voltage vs Current Limit Threshold