ZHCSHG3B november   2017  – july 2020 TPS254900A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
    1.     7
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  FAULT Response
      2. 8.3.2  Cable Compensation
        1. 8.3.2.1 Design Procedure
      3. 8.3.3  D+ and D– Protection
      4. 8.3.4  VBUS OVP Protection
      5. 8.3.5  Output and D+ or D– Discharge
      6. 8.3.6  Port Power Management (PPM)
        1. 8.3.6.1 Benefits of PPM
        2. 8.3.6.2 PPM Details
        3. 8.3.6.3 Implementing PPM in a System With Two Charging Ports (CDP and SDP1)
      7. 8.3.7  Overcurrent Protection
      8. 8.3.8  Undervoltage Lockout
      9. 8.3.9  Thermal Sensing
      10. 8.3.10 Current-Limit Setting
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Truth Table (TT)
      2. 8.4.2 USB BC1.2 Specification Overview
      3. 8.4.3 Standard Downstream Port (SDP) Mode — USB 2.0 and USB 3.0
      4. 8.4.4 Charging Downstream Port (CDP) Mode
      5. 8.4.5 Client Mode
      6. 8.4.6 High-Bandwidth Data-Line Switch
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Capacitance
        2. 9.2.2.2 Output Capacitance
        3. 9.2.2.3 BIAS Capacitance
        4. 9.2.2.4 Output and BIAS TVS
      3. 9.2.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Device Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  14. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
  • RVC|20
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

Unless otherwise noted, –40°C ≤ TJ ≤ 125°C and 4.5 V ≤ V(IN) ≤ 6.5 V, V(EN) = V(CTL1) = V(CTL2) = V(IN), R(FAULT) = R(STATUS) = 10 kΩ, R(IMON) = 2.55 kΩ, R(ILIM_HI) = 19.1 kΩ, R(ILIM_LO) = 80.6 kΩ. Positive currents are into pins. Typical values are at 25°C. All voltages are with respect to GND.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OUT – POWER SWITCH
rDS(on)On-resistance(1)TJ = 25°C4555mΩ
–40°C ≤ TJ ≤ 85°C4569
–40°C ≤TJ ≤ 125°C4577
IlkgReverse leakage currentVOUT = 6.5 V, VIN = VEN = 0 V, –40°C ≤ TJ ≤ 85°C, measure I(IN)0.012µA
OUT – DISCHARGE
R(DCHG)Discharge resistance (mode change)400500630Ω
CTL1, CTL2, EN, OVP_SEL INPUTS
Input pin rising logic threshold voltage0.81.352V
Input pin falling logic threshold voltage0.71.151.65V
Hysteresis(2)200mV
Input currentPin voltage = 0 V or 6.5 V–11µA
CURRENT LIMIT
IOSOUT short-circuit current limitR(ILIM_LO) = 210 kΩ190240290mA
R(ILIM_LO) = 80.6 kΩ555620680
R(ILIM_LO) = 21.5 kΩ214523002460
R(ILIM_LO) = 19.1 kΩ242025902760
R(ILIM_HI) = 18.2 kΩ254527202895
R(ILIM_HI) = 14.3 kΩ324034553670
R(ILIM_HI) = 13.5 kΩ343536603890
R(ILIM_HI) = 11.8 kΩ393041804440
R(ILIM_HI) = 9.6 kΩ483551355450
R(ILIM_HI) shorted to GND500065008000
SUPPLY CURRENT
I(IN_OFF)Disabled IN supply currentV(EN) = 0 V, V(OUT) = 0 V, –40°C ≤ TJ ≤ 85°C, no 5.1-kΩ resistor (open) between BIAS and OUT0.15µA
I(IN_ON)Enabled IN supply currentSDP mode (CTL1, CTL2 = 0, 1)170250µA
CDP mode (CTL1, CTL2 = 1, 1)200280
Client mode (CTL1, CTL2 = 0, 0)120210
UNDERVOLTAGE LOCKOUT, IN
V(UVLO)UVLO threshold voltageIN rising3.94.14.3V
IN falling3.33.53.7
FAULT
Output low voltageI(FAULT) = 1 mA100mV
Off-state leakageV(FAULT) = 6.5 V2µA
STATUS
Output low voltageI(STATUS) = 1 mA100mV
Off-state leakageV(STATUS) = 6.5 V2µA
THERMAL SHUTDOWN
T(OTSD2)Thermal shutdown threshold155°C
T(OTSD1)Thermal shutdown threshold in current-limit135°C
Hysteresis(3)20°C
LOAD DETECT (VCTL1 = VCTL2 = VIN)
I(LD)IOUT load detection thresholdR(ILIM_LO) = 80.6 kΩ, rising load current585650715mA
Hysteresis(3)50mA
DM_IN AND DP_IN OVERVOLTAGE PROTECTION
V(OV_Data)Protection trip thresholdDP_IN and DM_IN rising3.33.94.15V
Hysteresis(3)100mV
R(DCHG_Data)Discharge resistor after OVP(2)DP_IN = DM_IN = 18 V, IN = 5 V or 0 V200kΩ
DP_IN = DM_IN = 5 V, IN = 5 V370
DP_IN = DM_IN = 5 V, IN = 0390
OUT OVERVOLTAGE PROTECTION
V(OV_OUT_LOW)Protection trip thresholdOUT rising5.6566.35V
Hysteresis(3)90mV
V(OV_OUT_HIGH)Protection trip thresholdOUT rising6.66.957.3V
Hysteresis(3)130mV
R(DCHG_OUT)Discharge resistorOUT = 18 V, IN = 5 V5585kΩ
OUT = 18 V, IN = 080120
CABLE COMPENSATION
I(CS)Sink currentLoad = 3.2 A, 2.5 V ≤ V(CS) ≤ 6.5 V250262275µA
Load = 3 A, 2.5 V ≤ V(CS) ≤ 6.5 V234246258
Load = 2.4 A, 2.5 V ≤ V(CS) ≤ 6.5 V187197207
Load = 2.1 A, 2.5 V ≤ V(CS) ≤ 6.5 V163172181
Load = 1 A, 2.5 V ≤ V(CS) ≤ 6.5 V778287
CURRENT MONITOR OUTPUT (IMON)
I(IMON)Source currentLoad = 3.2 A, 0 ≤ V(IMON) ≤ 2.5 V306333359µA
Load = 3 A, 0 ≤ V(IMON) ≤ 2.5 V287312337
Load = 2.4 A, 0 ≤ V(IMON) ≤ 2.5 V230250270
Load = 2.1 A, 0 ≤ V(IMON) ≤ 2.5 V201218235
Load = 1 A, 0 ≤ V(IMON) ≤ 2.5 V94104114
Load = 0.5 A, 0 ≤ V(IMON) ≤ 2.5 V445260
HIGH-BANDWIDTH ANALOG SWITCH
R(HS_ON)DP and DM switch on-resistanceV(DP_OUT) = V(DM_OUT) = 0 V, I(DP_IN) = I(DM_IN) = 30 mA3.26.5Ω
V(DP_OUT) = V(DM_OUT) = 2.4 V, I(DP_IN) = I(DM_IN) = –15 mA3.87.6
|ΔR(HS_ON)|Switch resistance mismatch between DP and DM channelsV(DP_OUT) = V(DM_OUT) = 0 V, I(DP_IN) = I(DM_IN) = 30 mA0.050.15Ω
V(DP_OUT) = V(DM_OUT) = 2.4 V, I(DP_IN) = I(DM_IN) = –15 mA0.050.15
C(IO_OFF)DP and DM switch off-state capacitance(4)VEN = 0 V, V(DP_IN) = V(DM_IN) = 0.3 V, Vac = 0.03 VPP, f = 1 MHz8.8pF
C(IO_ON)DP and DM switch on-state capacitance(4)V(DP_IN) = V(DM_IN) = 0.3 V, Vac = 0.03 VPP, f = 1 MHz10.9pF
Off-state isolation(3)V(EN) = 0 V, f = 250 MHz8dB
On-state cross-channel isolation(4)f = 250 MHz30dB
Ilkg(OFF)Off-state leakage currentVEN = 0 V, V(DP_IN) = V(DM_IN) = 3.6 V, V(DP_OUT) = V(DM_OUT) = 0 V, measure I(DP_OUT) and I(DM_OUT)0.11.5µA
BWBandwidth (–3 dB)(4)R(L) = 50 Ω940MHz
CHARGING DOWNSTREAM PORT DETECT
V(DM_SRC)DM_IN CDP output voltageV(DP_IN) = 0.6 V, –250 µA < I(DM_IN) < 0 µA0.50.60.7V
V(DAT_REF)DP_IN rising lower window threshold for V(DM_SRC) activation0.360.4V
Hysteresis(4)50mV
V(LGC_SRC)DP_IN rising upper window threshold for VDM_SRC de-activation0.80.88V
V(LGC_SRC_HYS)Hysteresis(4)100mV
I(DP_SINK)DP_IN sink currentV(DP_IN) = 0.6 V4075100µA
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature. Thermal effects must be taken into account separately.
(2) This parameter is provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.
(3) This parameter is provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.
(4) This parameter is provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.