SNVS837B June   2013  – April 2016 LM3263

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 System Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  PWM Operation
      2. 7.3.2  PFM Operation
      3. 7.3.3  Active Current Assist and Analog Bypass (ACB)
      4. 7.3.4  Bypass Operation
      5. 7.3.5  Dynamic Adjustment of Output Voltage
      6. 7.3.6  DC-DC Operating Mode Selection
      7. 7.3.7  Internal Synchronous Rectification
      8. 7.3.8  Current Limit
      9. 7.3.9  Timed Current Limit
      10. 7.3.10 Thermal Overload Protection
      11. 7.3.11 Start-Up
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Low-Power Mode
      3. 7.4.3 Standby Mode
      4. 7.4.4 Active Mode
      5. 7.4.5 User States
    5. 7.5 Programming
      1. 7.5.1 RFFE Interface
      2. 7.5.2 Supported Command Sequences
      3. 7.5.3 Device Enumeration
      4. 7.5.4 GPO1
      5. 7.5.5 Trigger Registers
      6. 7.5.6 Control Interface Timing Parameters
    6. 7.6 Register Map
  8. 8 Application Information
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Recommended External Components
          1. 8.2.2.1.1 Inductor Selection
          2. 8.2.2.1.2 Capacitor Selection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout Considerations
    1. 10.1 Layout Guidelines
      1. 10.1.1 1. Overview
      2. 10.1.2 2. PCB
        1. 10.1.2.1 Energy Efficiency
        2. 10.1.2.2 EMI
      3. 10.1.3 3. Manufacturing Considerations
    2. 10.2 4. Layout Examples
      1. 10.2.1 DC-DC Converter
        1. 10.2.1.1 Star Connection Between VBATT, DC-DC Converter, and PA
          1. 10.2.1.1.1 VBATT Star Connection
    3. 10.3 DSBGA Package Assembly and Use
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.2 Documentation Support

11.2.1 Related Documentation

For additional information, see the following:

    AN-1112 DSBGA Wafer Level Chip Scale Package (SNVA009)

11.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.4 Trademarks

E2E is a trademark of Texas Instruments.

MIPI is a registered trademark of Mobile Industry Processor Interface Alliance.

All other trademarks are the property of their respective owners.

11.5 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.