SNOSC66D MARCH   2012  – September 2016 LM3017

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 True Shutdown
      2. 7.3.2 Operation of the EN/MODE Pin
      3. 7.3.3 EN/MODE Control
      4. 7.3.4 Overvoltage Protection
      5. 7.3.5 Thermal Protection
      6. 7.3.6 Current Limit Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Boost Mode
      3. 7.4.3 Standby Mode
      4. 7.4.4 Start-Up Boost Mode
      5. 7.4.5 Pass-Through Mode
      6. 7.4.6 Start-Up Pass-Through Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Programming the Output Voltage
        2. 8.2.2.2  Power Inductor Selection
        3. 8.2.2.3  Setting the Output Current
        4. 8.2.2.4  Additional Slope Compensation
        5. 8.2.2.5  Current Limit With Additional Slope Compensation
        6. 8.2.2.6  Power Diode Selection
        7. 8.2.2.7  Low-Side MOSFET Selection (Switching MOSFET)
        8. 8.2.2.8  Pass MOSFET Selection (High-Side MOSFET)
        9. 8.2.2.9  Input Capacitor Selection
        10. 8.2.2.10 Output Capacitor Selection
        11. 8.2.2.11 VCC Decoupling Capacitor
        12. 8.2.2.12 Slope Compensation Ramp
        13. 8.2.2.13 Control Loop Compensation
          1. 8.2.2.13.1 Compensation Network Components Calculations
          2. 8.2.2.13.2 Compensation Design Example
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Filter Capacitors
      2. 10.1.2 Sense Lines
      3. 10.1.3 Compact Layout
      4. 10.1.4 Ground Plane and Vias
    2. 10.2 Layout Examples
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

For related documentation see the following:

11.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

11.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.4 Trademarks

E2E is a trademark of Texas Instruments.

Thunderbolt is a trademark of Intel Corporation.

All other trademarks are the property of their respective owners.

11.5 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.