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TPS7H2221-SEP

現行

耐輻射 1.6-V 至 5.5-V 輸入 1.25-A 負載開關

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產品規格表

TPS7H2221-SEP

現行
產品規格表 立即訂購

產品詳細資料

Imax (A) 1.25 Vin (max) (V) 5.5 Vin (min) (V) 1.6 Number of channels 1 Features Inrush current control, Quick output discharge, Short circuit protection, Thermal shutdown Quiescent current (Iq) (typ) (µA) 8 Soft start Fixed Rise Time Rating Space Ron (typ) (mΩ) 115 Shutdown current (ISD) (typ) (µA) 0.003 Current limit type Fixed Function Inrush current control, Short circuit protection, Thermal shutdown FET Internal Operating temperature range (°C) -55 to 125 Device type Load switch
Imax (A) 1.25 Vin (max) (V) 5.5 Vin (min) (V) 1.6 Number of channels 1 Features Inrush current control, Quick output discharge, Short circuit protection, Thermal shutdown Quiescent current (Iq) (typ) (µA) 8 Soft start Fixed Rise Time Rating Space Ron (typ) (mΩ) 115 Shutdown current (ISD) (typ) (µA) 0.003 Current limit type Fixed Function Inrush current control, Short circuit protection, Thermal shutdown FET Internal Operating temperature range (°C) -55 to 125 Device type Load switch
SOT-SC70 (DCK) 6 4.2 mm² 2 x 2.1
  • Vendor item drawing available, VID V62/22609
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latch-up (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to effective linear energy transfer (LETEFF) of 43 MeV– cm2/mg.
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized to LETEFF of 43 MeV– cm2/mg.
  • Input operating voltage range (VIN): 1.6 to 5.5 V
  • Recommended continuous current (IMAX): 1.25 A
  • On-resistance (RON):
    • 116 mΩ (typ.) at VIN = 5 V
    • 115 mΩ (typ.) at VIN = 3.3 V
    • 133 mΩ (typ.) at VIN = 1.8 V
  • Output short protection (ISC): 3 A (typ.)
  • Low power consumption:
    • ON state (IQ): 8.3 µA (typ.)
    • OFF state (ISD): 3 nA (typ.)
  • Slow turn ON timing to limit inrush current (tON):
    • tON at 5 V = 1.68 ms at 3.61 mV/µs
    • tON at 3.3 V = 1.51 ms at 2.91 mV/µs
    • tON at 1.8 V = 1.32 ms at 2.15 mV/µs
  • Adjustable output discharge and fall time:
    • Internal QOD resistance = 9.2 Ω (typ.) at VIN = 3.3 V
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhance mold compound for low outgassing
  • Vendor item drawing available, VID V62/22609
  • Total ionizing dose (TID) characterized to 30 krad(Si)
    • TID RLAT (radiation lot acceptance testing) for every wafer lot to 20 krad(Si)
  • Single-event effects (SEE) characterized
    • Single-event latch-up (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to effective linear energy transfer (LETEFF) of 43 MeV– cm2/mg.
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized to LETEFF of 43 MeV– cm2/mg.
  • Input operating voltage range (VIN): 1.6 to 5.5 V
  • Recommended continuous current (IMAX): 1.25 A
  • On-resistance (RON):
    • 116 mΩ (typ.) at VIN = 5 V
    • 115 mΩ (typ.) at VIN = 3.3 V
    • 133 mΩ (typ.) at VIN = 1.8 V
  • Output short protection (ISC): 3 A (typ.)
  • Low power consumption:
    • ON state (IQ): 8.3 µA (typ.)
    • OFF state (ISD): 3 nA (typ.)
  • Slow turn ON timing to limit inrush current (tON):
    • tON at 5 V = 1.68 ms at 3.61 mV/µs
    • tON at 3.3 V = 1.51 ms at 2.91 mV/µs
    • tON at 1.8 V = 1.32 ms at 2.15 mV/µs
  • Adjustable output discharge and fall time:
    • Internal QOD resistance = 9.2 Ω (typ.) at VIN = 3.3 V
  • Space Enhanced Plastic (SEP)
    • Controlled baseline
    • Gold bondwire
    • NiPdAu lead finish
    • One assembly and test site
    • One fabrication site
    • Military (–55°C to 125°C) temperature range
    • Extended product life cycle
    • Extended product-change notification (PCN)
    • Product traceability
    • Enhance mold compound for low outgassing

The TPS7H2221-SEP device is a small, single channel load switch with controlled slew rate. The device contains an N-channel MOSFET that can operate over an input voltage range of 1.6 V to 5.5 V and can support a maximum continuous current of 1.25 A.

The switch ON state is controlled by a digital input that is capable of interfacing directly with low-voltage control signals. When power is first applied, a Smart Pull Down is used to keep the ON pin from floating until system sequencing is complete. Once the pin is deliberately driven high (VON>VIH), the Smart Pull Down will be disconnected to prevent unnecessary power loss.

The TPS7H2221-SEP load switch is also self-protected, meaning that it protects against short circuit events on the output of the device.

The TPS7H2221-SEP is available in a standard SC-70 package characterized for operation over an ambient temperature range of –55°C to 125°C.

The TPS7H2221-SEP device is a small, single channel load switch with controlled slew rate. The device contains an N-channel MOSFET that can operate over an input voltage range of 1.6 V to 5.5 V and can support a maximum continuous current of 1.25 A.

The switch ON state is controlled by a digital input that is capable of interfacing directly with low-voltage control signals. When power is first applied, a Smart Pull Down is used to keep the ON pin from floating until system sequencing is complete. Once the pin is deliberately driven high (VON>VIH), the Smart Pull Down will be disconnected to prevent unnecessary power loss.

The TPS7H2221-SEP load switch is also self-protected, meaning that it protects against short circuit events on the output of the device.

The TPS7H2221-SEP is available in a standard SC-70 package characterized for operation over an ambient temperature range of –55°C to 125°C.
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類型 標題 日期
* Data sheet TPS7H2221-SEP Radiation Tolerant 5.5-V, 1.25-A, 115-mΩ Load Switch datasheet (Rev. A) PDF | HTML 2022年 9月 20日
* VID TPS7H2221-SEP VID V62-22609 2022年 12月 22日
* Radiation & reliability report TPS7H2221-SEP Total Ionizing Dose (TID) Radiation Report (Rev. A) 2022年 9月 28日
* Radiation & reliability report TPS7H2221-SEP Production Flow and Reliability Report 2022年 9月 22日
* Radiation & reliability report TPS7H2221-SEP Neutron Displacement (NDD) Characterization Report 2022年 8月 18日
* Radiation & reliability report TPS7H2221-SEP Single-Event Effects (SEE) Report PDF | HTML 2022年 7月 12日
Selection guide TI Space Products (Rev. K) 2025年 4月 4日
Technical article 航太級強化產品如何因應低地球軌道應用的挑戰 (Rev. A) PDF | HTML 2024年 1月 11日
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 2022年 9月 15日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

設計與開發

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開發板

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使用指南: PDF | HTML
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開發板

ALPHA-3P-ADM-VA601-SPACE-AMD — Alpha Data ADM-VA601 套件，使用 AMD Versal 核心 XQRVC1902 ACAP 和 TI 耐輻射產品

外型尺寸採用 6U VPX，強調 AMD-Xilinx® Versal AI Core XQRVC1902 適應性 SoC/FPGA。ADM-VA600 為模組化機板設計，配備一個 FMC+ 連接器、DDR4 DRAM 及系統監控。零組件多數為耐輻射電源管理、介面、時脈與嵌入式處理裝置。

從：Alpha Data Parallel Systems Ltd.
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模擬型號

TPS7H2221-SEP PSpice Transient Model

SLVMDX7.ZIP (21 KB) - PSpice Model
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參考設計

TIDA-050088 — 適用於 Versal AI Edge 的耐輻射電源參考設計

這是針對 AMD Versal™ AI Edge XQRVE2302 所設計的耐輻射電源架構參考設計。Versal Edge 是適用於航太應用的採用型系統單晶片 (SoC)，能以小尺寸實現高效能。穩固的電力輸送是在航太環境中充分運用此設計的關鍵。此電源設計採用多個裝置為各種軌供電，並搭配時序控制器，來適當排序及監控軌。
Design guide: PDF
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SOT-SC70 (DCK) 6 Ultra Librarian
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