LM5111
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5-A Sink and 3-A Source Current Capability
- Two Channels can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)
- Available in Dual Noninverting, Dual Inverting and Combination Configurations
- Supply Rail Undervoltage Lockout Protection (UVLO)ƒ
- LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B
- Pin Compatible With Industry Standard Gate Drivers
The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak
output current and efficiency. Each compound output driver stage
includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak
from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Undervoltage lockout protection is also
provided. The drivers can be operated in parallel with inputs and outputs connected to double the
drive current capability. This device is available in the SOIC package or the thermally enhanced
MSOP-PowerPAD package.
技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | LM5111 Dual 5-A Compound Gate Driver 数据表 (Rev. H) | PDF | HTML | 2016-9-28 | ||
| 应用手册 | 为何使用栅极驱动变压器？ | PDF | HTML | 英语版 | PDF | HTML | 2024-3-5 | |
| 应用手册 | 不同功率因数校正 (PFC) 拓扑的栅极驱动器需求综述 | PDF | HTML | 英语版 | PDF | HTML | 2024-1-23 | |
| 应用手册 | 用于核磁共振成像应用的静态磁体电源设计 | PDF | HTML | 英语版 | PDF | HTML | 2024-1-23 | |
| 应用手册 | 紧凑、强大且稳健的低侧栅极驱动器的优势 | PDF | HTML | 英语版 | PDF | HTML | 2022-9-23 | |
| 应用简报 | 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) | 英语版 (Rev.A) | 2020-4-29 | |||
| 应用简报 | 了解峰值源电流和灌电流 (Rev. A) | 英语版 (Rev.A) | 2020-4-29 | |||
| 应用手册 | Improving Efficiency of DC-DC Conversion through Layout | 2019-5-7 | ||||
| 应用简报 | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019-1-18 | ||||
| 应用简报 | High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) | 2018-11-26 | ||||
| 更多文献资料 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018-10-29 | ||||
| 选择指南 | 电源管理指南 2018 | 2018-7-31 | ||||
| 应用简报 | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 2018-3-16 |
设计与开发
如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。
UCC27423-4-5-Q1EVM — UCC2742xQ1 具有使能端的双路 4A 高速低侧 MOSFET 驱动器评估模块 (EVM)
TIDM-AUTO-DC-LED-LIGHTING — 面向汽车前灯应用的多通道高密度 LED 控制
此设计采用 TMS320F2803x Piccolo 微控制器，实现了一个适用于典型汽车照明系统的高效多通道直流/直流 LED 控制系统。此设计支持多达 6 个 LED 控制通道，每个通道具有最高 1.2A 的电流驱动能力。凭借升压和降压二级电源拓扑，此系统可在 8V 至 20V 的宽输入直流电压范围内运行，非常适合汽车应用。
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| SOIC (D) | 8 | Ultra Librarian |
| HVSSOP (DGN) | 8 | Ultra Librarian |
订购和质量
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