DRV7167
- 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
- Low GaN on-state resistance
- 2.2 mΩ RDS(ON) (per FET) at TA=25°C
- Enables efficient and high density power conversion
- High output current capability: 60Arms
- Supports upto 500 kHz PWM switching frequency
- Ultra-low propagation delay (20ns typical) and matching (2ns typical)
- Configurable slew rate of GaN FETs
- Zero-voltage detection (ZVD) reporting for dead-time optimization.
- Independent input mode (IIM) control
- Single PWM input with resistor programmable dead-time option for IO-limited controllers
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- Robust protection
- Interlock protection in Independent Input Mode (IIM)
- Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
- VDS monitoring based cycle-by-cyle short-circuit protection
- Fault indication for over-temperature, supply under-voltage and short-circuit events
- Parasitic optimized QFN package with exposed top pad to support top-side cooling.
The DRV7167A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.
GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.
The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 数据表 | DRV7167A 100-V , 60A Half-Bridge GaN Motor Driver Power Stage 数据表 (Rev. A) | PDF | HTML | 2026-7-24 | ||
| 应用简报 | 类人机器人中的电机控制 | PDF | HTML | PDF | HTML | 2026-6-22 |
设计与开发
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TIDA-010979 — 具有工业通信功能的 48v 1kw 机器人关节联合电机控制参考设计
该参考设计采用 TI Sitara™ MCU- AM261x 器件，用于处理基于工业以太网连接的电机驱动器。该设计使用直径为 70mm 的印刷电路板 (PCB) 来驱动人形机器人关节（48V、1kW Eyoubot 电机）。该设计展现了一种外形小巧、简化的集成式平台。该平台包括一个使用三个 DRV7167 半桥 GaN 电机驱动器功率级的高功率密度段、一个使用 AM2612 500MHz R5F 核心 MCU 和 AMC0106 功能隔离式 Δ-Σ 调制器的精确实时控制级，以及通过工业以太网进行高带宽通信。
| 封装 | 引脚 | CAD 符号、封装和 3D 模型 |
|---|---|---|
| VQFN-FCRLF (VBN) | 18 | Ultra Librarian |
订购和质量
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