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UCC27302A

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具有 5V UVLO、互锁和使能选项的 120V、4.5A 半桥驱动器

产品详情

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 7 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 5 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Integrated bootstrap diode, Interlock, Negative Voltage Handling on Input Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 7 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 5 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Integrated bootstrap diode, Interlock, Negative Voltage Handling on Input Driver configuration Dual, Noninverting, TTL compatible
VSON (DRC) 10 9 mm² (3 mm × 3 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) HSOIC (DDA) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives two N-channel MOSFETs in half-bridge configuration
  • –40°C to +150°C junction temperature range
  • 120V abs max voltage on HB pin
  • 3.7A source, 4.5A sink output currents
  • 7V to 17V VDD operating range (20V abs max) with UVLO
  • –(28–VDD)V abs max negative transient tolerance on HS pin (<100ns pulse)
  • –10V to +20V abs max input pins tolerance, independent of supply voltage range (TTL compatible)
  • Switching parameters:
    • 20ns typical propagation delay times
    • 7.2ns rise and 5.5ns fall time with 1000pF load
    • 4ns typical delay matching
  • Integrated bootstrap diode
  • Input interlock
  • Enable/disable functionality with low current consumption (3µA typical) when disabled (DRC package only)
  • Drives two N-channel MOSFETs in half-bridge configuration
  • –40°C to +150°C junction temperature range
  • 120V abs max voltage on HB pin
  • 3.7A source, 4.5A sink output currents
  • 7V to 17V VDD operating range (20V abs max) with UVLO
  • –(28–VDD)V abs max negative transient tolerance on HS pin (<100ns pulse)
  • –10V to +20V abs max input pins tolerance, independent of supply voltage range (TTL compatible)
  • Switching parameters:
    • 20ns typical propagation delay times
    • 7.2ns rise and 5.5ns fall time with 1000pF load
    • 4ns typical delay matching
  • Integrated bootstrap diode
  • Input interlock
  • Enable/disable functionality with low current consumption (3µA typical) when disabled (DRC package only)

The UCC27302A is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27302A to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. However, the input interlock logic will turn both driver outputs low whenever both LI and HI inputs are high at the same time. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27302A is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27302A to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. However, the input interlock logic will turn both driver outputs low whenever both LI and HI inputs are high at the same time. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

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UCC27288EVM — UCC27288 100V、3A、8V UVLO 半桥栅极驱动器评估模块

UCC27288EVM 适用于评估 UCC27288D,后者是一款具备 2.5A 峰值拉电流和 3.5A 峰值灌电流能力的 100V 半桥栅极驱动器。此 EVM 可用作驱动功率 MOSFET 的参考设计,驱动电压高达 20V。
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SOIC (D) 8 Ultra Librarian
HSOIC (DDA) 8 Ultra Librarian

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