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UCC218915-Q1

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具有分离输出、DESAT 及故障报告功能的汽车级±2.8A 单通道隔离式前置驱动器

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UCC218915-Q1

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产品详情

Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1063 Transient isolation voltage (VIOTM) (VPK) 7071 Peak output current (source) (typ) (A) 2.8 Features Active Short Circuit (ASC) protection, Active miller clamp, Desaturation (DESAT) protection, Fault reporting, Overcurrent protection, Overtemperature protection, Pre-driver, Soft turn-off, Undervoltage Lock Out (UVLO), Voltage monitoring Operating temperature range (°C) -40 to 125 Rating Automotive TI functional safety category Functional Safety-Capable
Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1063 Transient isolation voltage (VIOTM) (VPK) 7071 Peak output current (source) (typ) (A) 2.8 Features Active Short Circuit (ASC) protection, Active miller clamp, Desaturation (DESAT) protection, Fault reporting, Overcurrent protection, Overtemperature protection, Pre-driver, Soft turn-off, Undervoltage Lock Out (UVLO), Voltage monitoring Operating temperature range (°C) -40 to 125 Rating Automotive TI functional safety category Functional Safety-Capable
SSOP (DFP) 28 78.795 mm² (7.65 mm × 10.3 mm)
  • 5kVRMS single-channel isolated pre-driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • SiC MOSFETs and IGBTs up to 1500Vpk
  • 36V maximum output drive voltage (VDD-VEE)
  • 2.8A outputs for directly driving external buffer PMOS/NMOS pair.
  • 200V/ns minimum CMTI
  • 200ns response time fast DESAT protection with 9V threshold
  • External active Miller clamp
  • Dedicated Soft Shut Down (SSD) pin with 1A sinking capability. Shut down current is controllable by an external resistor.
  • ASC input on isolated side to turn on power switch during system fault. ASC status reported through ASC_FB on low-voltage side.
  • Overcurrent reporting on FLT and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • 12V VDD UVLO with power good on RDY
  • Overtemperature protection with power good on RDY
  • 100ns (maximum) propagation delay
  • 28-DFP wide body package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • 5kVRMS single-channel isolated pre-driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
  • SiC MOSFETs and IGBTs up to 1500Vpk
  • 36V maximum output drive voltage (VDD-VEE)
  • 2.8A outputs for directly driving external buffer PMOS/NMOS pair.
  • 200V/ns minimum CMTI
  • 200ns response time fast DESAT protection with 9V threshold
  • External active Miller clamp
  • Dedicated Soft Shut Down (SSD) pin with 1A sinking capability. Shut down current is controllable by an external resistor.
  • ASC input on isolated side to turn on power switch during system fault. ASC status reported through ASC_FB on low-voltage side.
  • Overcurrent reporting on FLT and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • 12V VDD UVLO with power good on RDY
  • Overtemperature protection with power good on RDY
  • 100ns (maximum) propagation delay
  • 28-DFP wide body package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

The UCC218915-Q1 is a galvanically isolated single channel pre-driver designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. The UCC218915-Q1 has dual 2.8A outputs for directly driving an external buffer NMOS/PMOS pair.

The input side is isolated from the output side with SiO2 isolation technology, supporting up to 1.06kVRMS working voltage, 10kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >200V/ns common mode noise immunity (CMTI).

The UCC218915-Q1 includes state-of-art protection features, such as fast overcurrent and short circuit detection, controlled soft shutdown after a fault, fault reporting, active Miller clamp, active short circuit input on the high-voltage side and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness.

The UCC218915-Q1 is a galvanically isolated single channel pre-driver designed for SiC MOSFETs and IGBTs up to 1500V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. The UCC218915-Q1 has dual 2.8A outputs for directly driving an external buffer NMOS/PMOS pair.

The input side is isolated from the output side with SiO2 isolation technology, supporting up to 1.06kVRMS working voltage, 10kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >200V/ns common mode noise immunity (CMTI).

The UCC218915-Q1 includes state-of-art protection features, such as fast overcurrent and short circuit detection, controlled soft shutdown after a fault, fault reporting, active Miller clamp, active short circuit input on the high-voltage side and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness.
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* 数据表 UCC218915-Q1 Single Channel Isolated Pre-Driver for SiC/IGBT with Active Protection for Automotive Applications 数据表 PDF | HTML 2025-9-16

设计与开发

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评估板

UCC2189X5YQEVM-096 — UCC2189X5Y 评估模块

UCC2189X5YQEVM-096 是一款紧凑型半桥栅极驱动器板，包含两个单通道隔离式栅极驱动器。它可提供所需的隔离式辅助电源、驱动电流和保护功能，用于驱动多个不同型号的 Wolfspeed 碳化硅 (SiC) MOSFET 模块和其他具有类似引脚排列的 IGBT 或 SiC MOSFET 模块。
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参考设计

TIDA-011011 — 适用于 3.3kV SiC-FET 且具有隔离式偏置电源的隔离式栅极驱动器板参考设计

此参考设计提供了一个用于为额定电压高达 3.3kV 的场效应晶体管 (FET) 实现栅极驱动设计的模板。通过使用具有分离输出的单通道隔离式前置驱动器，可以驱动多种型号的功率 FET，同时保持高灌电流和拉电流能力。通过整合 DC/DC 隔离式偏置电源和受控的输出轨电压，进一步提升驱动设计的性能，从而实现更低 RDS(on) 运行。

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参考设计

TIDA-011012 — 适用于中压应用的 50kW SiC 模块化固态变压器参考设计

此设计实现了一款基于碳化硅 (SiC) 电源模块的三相固态变压器 (SST)。采用模块化架构，可将多个变换器子模块串联堆叠，以满足中压电网应用需求。高速开关 SiC 器件使 DC/AC 级能够以 10kHz 开关频率运行，双有源桥 (DAB) 隔离级能够以 100kHz 开关频率运行，从而减小高频磁性器件尺寸并提升整体功率密度。模块间通信可提供中压终端设备所需的高隔离电压电平。级联拓扑可将电网电压均匀分配至各子模块，使系统能够采用标准低耐压等级 SiC 器件，同时实现完整的中压运行能力。
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SSOP (DFP) 28 Ultra Librarian
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