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UCC21330-Q1

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Automotive, 4A/6A dual-channel basic isolated gate driver with disable, programmable deadtime

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数据表

UCC21330-Q1

正在供货
数据表 立即订购

产品详情

Number of channels 2 Isolation rating Basic Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 850 Transient isolation voltage (VIOTM) (VPK) 4242 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 9.2 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12 TI functional safety category Functional Safety-Capable
Number of channels 2 Isolation rating Basic Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 3000 Working isolation voltage (VIOWM) (Vrms) 850 Transient isolation voltage (VIOTM) (VPK) 4242 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 9.2 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Automotive Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12 TI functional safety category Functional Safety-Capable
SOIC (D) 16 59.4 mm² (9.9 mm × 6 mm)

  • Universal: dual low-side, dual high-side or halfbridge driver

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V,12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

  • Universal: dual low-side, dual high-side or halfbridge driver

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V,12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

The UCC21330-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21330-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21330-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21330-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21330-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21330-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.
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顶层文档 类型 标题 格式选项 下载最新的英语版本 日期
* 数据表 UCC21330x -Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver 数据表 (Rev. A) PDF | HTML 2024-6-28
功能安全信息 UCC21222-Q1 and UCC21330-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. B) PDF | HTML 2025-1-30

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评估板

UCC21220EVM-009 — UCC21220 4A、6A、3.0kVRMS 隔离式双通道栅极驱动器评估模块

UCC21220EVM-009 旨在用于评估 UCC21220，后者是一款具备 4.0A 源极峰值电流和 6.0A 峰值沉降电流能力的 3.0kVRMS 隔离式双通道栅极驱动器。此 EVM 可用于参照驱动器 IC 的数据表对其进行评估。该 EVM 还可用作驱动器 IC 组件选择指南。该 EVM 可用于确定 PCB 布局对栅极驱动器性能的影响。
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参考设计

PMP41150 — 1000W、48V 开关电容器转换器参考设计

此参考设计采用无电感器开关电容器转换拓扑，适用于高功率密度和紧凑型功率级 (70mm × 55mm × 2.85mm)。采用 TLC555-Q1 计时器的简单控制方案可实现转换比为 4:1 或 3:1 的固定转换比输出，并且可以针对不同的配电要求进行设置。对于 4:1 转换比，满载效率为 96.7%，而峰值效率为 98.5% (Iout = 30A)。对于 3:1 转换比，满载效率为 97.6%，而峰值效率为 98.7% (Iout = 25A)。

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