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半桥驱动器

TPS28226

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具有 8V UVLO、用于同步整流的 4A、27V 半桥栅极驱动器

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数据表

TPS28226

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产品详情

Bootstrap supply voltage (max) (V) 33 Power switch MOSFET Input supply voltage (min) (V) 6.8 Input supply voltage (max) (V) 8 Peak output current (A) 4 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 3.5 Rating Catalog Propagation delay time (µs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Input threshold TTL Channel input logic TTL Switch node voltage (V) 0 Features (x1) PWM, Synchronous Rectification Driver configuration Single
Bootstrap supply voltage (max) (V) 33 Power switch MOSFET Input supply voltage (min) (V) 6.8 Input supply voltage (max) (V) 8 Peak output current (A) 4 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 3.5 Rating Catalog Propagation delay time (µs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Input threshold TTL Channel input logic TTL Switch node voltage (V) 0 Features (x1) PWM, Synchronous Rectification Driver configuration Single
SOIC (D) 8 29.4 mm² 4.9 x 6 VSON (DRB) 8 9 mm² 3 x 3
  • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
  • Wide Power System Train Input Voltage: 3 V Up to 27 V
  • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
  • Capable to Drive MOSFETs with ≥40-A Current per Phase
  • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
  • Capable to Propagate <30-ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers
  • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
  • Wide Power System Train Input Voltage: 3 V Up to 27 V
  • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
  • Capable to Drive MOSFETs with ≥40-A Current per Phase
  • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
  • Capable to Propagate <30-ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

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类型 标题 下载最新的英语版本 日期
* 数据表 TPS28226 High-Frequency 4-A Sink Synchronous MOSFET Drivers 数据表 (Rev. A) PDF | HTML 2014年 11月 26日
应用简报 了解峰值源电流和灌电流 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日
应用简报 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日
更多文献资料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
选择指南 电源管理指南 2018 (Rev. K) 2018年 7月 31日
选择指南 电源管理指南 2018 (Rev. R) 2018年 6月 25日
更多文献资料 MOSFET 和 IGBT 栅极驱动器电路的基本原理 最新英语版本 (Rev.A) 2018年 4月 17日
更多文献资料 Power Loss Calculation for Sync Buck Converter 2007年 2月 14日

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