SN74CB3Q3244
- High-bandwidth data path (up to 500MHz)
- 5V-tolerant I/Os with device powered-up or powered-down
- Low and flat ON-state resistance (ron) characteristics over operating range
- Rail-to-rail switching on data I/O ports
- 0 to 5V switching with 3.3V VCC
- 0 to 3.3V switching with 2.5V VCC
- Bidirectional data flow, with near-zero propagation delay
- Low input and output capacitance minimizes loading and signal distortion
- Fast switching frequency
- Data and control inputs provide undershoot clamp diodes
- Low power consumption
- VCC operating range from 2.3V to 3.6V
- Data I/Os support 0 to 5V signaling levels (0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V)
- Control inputs can be driven by TTL or 5V/3.3V CMOS outputs
- Ioff supports partial-power-down mode operation
- Latch-up performance exceeds 100mA per JESD 78, Class II
- ESD performance tested per JESD 22
- 2000V human-body model (A114B, Class II)
- 1000V charged-device model (C101)
- Supports both digital and analog applications: differential signal interface, memory interleaving, bus isolation, low-distortion signal gating
The SN74CB3Q3244 is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3244 provides an optimized interface design for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q3244 is organized as two 4-bit bus switches with separate output-enable (1 OE, 2 OE) inputs. The device can be used as two 4-bit bus switches or as one 8-bit bus switch. When OE is low, the associated 4-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 4-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when powered down. The device has isolation during power off.
To make sure of the high-impedance state during power up or power down, OE must be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
技术文档
| 顶层文档 | 类型 | 标题 | 格式选项 | 下载最新的英语版本 | 日期 | |
|---|---|---|---|---|---|---|
| 应用手册 | 选择正确的德州仪器 (TI) 信号开关 (Rev. E) | PDF | HTML | 英语版 (Rev.E) | PDF | HTML | 2022-8-5 | |
| 应用手册 | 多路复用器和信号开关词汇表 (Rev. B) | 英语版 (Rev.B) | PDF | HTML | 2022-3-11 | ||
| 应用简报 | 利用关断保护信号开关消除电源时序 (Rev. C) | 英语版 (Rev.C) | PDF | HTML | 2021-10-21 |
设计与开发
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