BUF08630
- 10-Bit Resolution
- 8-Channel P-Gamma
- 1-Channel P-VCOM
- High Slew Rate VCOM: 45 V/µs
- 16x Rewritable Nonvolatile Memory
- Two Independent Pin-Selectable Memory Banks
- Rail-to-Rail Output:
- 300 mV Min Swing-to-Rail (10 mA)
- > 300 mA Max IOUT
- Low Supply Current
- Supply Voltage: 9 V to 20 V
- Digital Supply: 2 V to 5.5 V
- Two-Wire Interface:
- Supports 400 kHz and 3.4 MHz
- 1/2 AVDD Capability
- APPLICATIONS
- TFT-LCD Reference Drivers
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The BUF08630 offers eight programmable gamma channels and one programmable VCOM channel.
The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory.
The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 150 mV of either supply rail with a 10-mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400 kHz, and high-speed data transfers up to 3.4 MHz.
The BUF08630 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08630 is available in a 20-pin QFN package, and is specified from –40°C to +95°C.
技术文档
类型 | 标题 | 下载最新的英语版本 | 日期 | |||
---|---|---|---|---|---|---|
* | 数据表 | Programmable Gamma-Voltage Generator w/Adjustable Gain Vcom & 1/2 AVDD Topology 数据表 (Rev. A) | 2012年 8月 13日 | |||
EVM 用户指南 | BUF08630EVM User Guide (Rev. A) | 2016年 8月 2日 | ||||
应用手册 | Driving Capacitive Loads with Gamma Buffers | 2012年 11月 20日 | ||||
应用手册 | 所选封装材料的热学和电学性质 | 2008年 10月 16日 |
设计和开发
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封装 | 引脚 | CAD 符号、封装和 3D 模型 |
---|---|---|
VQFN (RGW) | 20 | Ultra Librarian |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点