ZHCSNG6 November   2021 UCC28781-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Detailed Pin Description
      1. 7.3.1  BUR Pin (Programmable Burst Mode)
      2. 7.3.2  FB Pin (Feedback Pin)
      3. 7.3.3  REF Pin (Internal 5-V Bias)
      4. 7.3.4  VDD Pin (Device Bias Supply)
      5. 7.3.5  P13 and SWS Pins
      6. 7.3.6  S13 Pin
      7. 7.3.7  IPC Pin (Intelligent Power Control Pin)
      8. 7.3.8  RUN Pin (Driver and Bias Source for Isolator)
      9. 7.3.9  PWMH and AGND Pins
      10. 7.3.10 PWML and PGND Pins
      11. 7.3.11 SET Pin
      12. 7.3.12 RTZ Pin (Sets Delay for Transition Time to Zero)
      13. 7.3.13 RDM Pin (Sets Synthesized Demagnetization Time for ZVS Tuning)
      14. 7.3.14 XCD Pin
      15. 7.3.15 CS, VS, and FLT Pins
    4. 7.4 Device Functional Modes
      1. 7.4.1  Adaptive ZVS Control with Auto-Tuning
      2. 7.4.2  Dead-Time Optimization
      3. 7.4.3  EMI Dither and Dither Fading Function
      4. 7.4.4  Control Law Across Entire Load Range
      5. 7.4.5  Adaptive Amplitude Modulation (AAM)
      6. 7.4.6  Adaptive Burst Mode (ABM)
      7. 7.4.7  Low Power Mode (LPM)
      8. 7.4.8  First Standby Power Mode (SBP1)
      9. 7.4.9  Second Standby Power Mode (SBP2)
      10. 7.4.10 Startup Sequence
      11. 7.4.11 Survival Mode of VDD (INT_STOP)
      12. 7.4.12 System Fault Protections
        1. 7.4.12.1  Brown-In and Brown-Out
        2. 7.4.12.2  Output Over-Voltage Protection (OVP)
        3. 7.4.12.3  Input Over Voltage Protection (IOVP)
        4. 7.4.12.4  Over-Temperature Protection (OTP) on FLT Pin
        5. 7.4.12.5  Over-Temperature Protection (OTP) on CS Pin
        6. 7.4.12.6  Programmable Over-Power Protection (OPP)
        7. 7.4.12.7  Peak Power Limit (PPL)
        8. 7.4.12.8  Output Short-Circuit Protection (SCP)
        9. 7.4.12.9  Over-Current Protection (OCP)
        10. 7.4.12.10 External Shutdown
        11. 7.4.12.11 Internal Thermal Shutdown
      13. 7.4.13 Pin Open/Short Protections
        1. 7.4.13.1 Protections on CS pin Fault
        2. 7.4.13.2 Protections on P13 pin Fault
        3. 7.4.13.3 Protections on RDM and RTZ pin Faults
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application Circuit
      1. 8.2.1 Design Requirements for a 60-W, 15-V ZVSF Bias Supply Application with a DC Input
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Bulk Capacitance and Minimum Bulk Voltage
        2. 8.2.2.2 Transformer Calculations
          1. 8.2.2.2.1 Primary-to-Secondary Turns Ratio (NPS)
          2. 8.2.2.2.2 Primary Magnetizing Inductance (LM)
          3. 8.2.2.2.3 Primary Winding Turns (NP)
          4. 8.2.2.2.4 Secondary Winding Turns (NS)
          5. 8.2.2.2.5 Auxiliary Winding Turns (NA)
          6. 8.2.2.2.6 Winding and Magnetic Core Materials
        3. 8.2.2.3 Calculation of ZVS Sensing Network
        4. 8.2.2.4 Calculation of BUR Pin Resistances
        5. 8.2.2.5 Calculation of Compensation Network
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1  General Considerations
      2. 10.1.2  RDM and RTZ Pins
      3. 10.1.3  SWS Pin
      4. 10.1.4  VS Pin
      5. 10.1.5  BUR Pin
      6. 10.1.6  FB Pin
      7. 10.1.7  CS Pin
      8. 10.1.8  AGND Pin
      9. 10.1.9  PGND Pin
      10. 10.1.10 Thermal Pad
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Receiving Notification of Documentation Updates
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information

PWMH and AGND Pins

The PWMH pin controls the gate of an SR MOSFET through an external isolating gate-driver. PWMH may also be used to bias the primary-side of the gate-driver. The PWMH driver ground return is referenced to the AGND pin. The maximum voltage level of PWMH is clamped to 5-V REF level. As PWMH goes high, when its voltage is less than 3 V, up to 21-mA peak pull-up current may be supplied from the P13 regulator. When the PWMH voltage goes above 3 V, the pull-up is supplied from the REF regulator instead, so the peak driving capability is limited to less than 6 mA to avoid tripping the over-current protection of the REF regulator.

As shown in Figure 7-12, since the RUN driver charges the decoupling capacitor of a digital isolator first through one small-signal diode at the beginning of every burst cycle, the sourcing current of PWMH is sufficient to send the control signal to the isolator and supply the continuous isolator operating current together with the RUN driver at the same time through another small-signal diode. The high peak driving capability of PWMH provides the flexibility of signal transmission through a digitally isolated gate-driver with opto-compatible input.

It is prudent to choose an isolated gate-driver with minimal power-up delay on both input and output sides to avoid missing several PWMH pulses for SR control.

AGND pin is the ground return for all the analog control signals, RUN driver, and PWMH driver. It is required to implement a careful layout separation from other noisy ground return paths, such as PGND and power stage ground. The thermal pad should be connected to the AGND pin directly and could be a Kelvin connection point to the related external components. For details of the grounding layout guideline and noise decoupling techniques, one can refer to the Section 8.1 of this datasheet.