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  • UCC28781-Q1 具有专用同步整流器栅极驱动的零电压开关反激式控制器

    • ZHCSNG6 November   2021 UCC28781-Q1

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  • UCC28781-Q1 具有专用同步整流器栅极驱动的零电压开关反激式控制器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Detailed Pin Description
      1. 7.3.1  BUR Pin (Programmable Burst Mode)
      2. 7.3.2  FB Pin (Feedback Pin)
      3. 7.3.3  REF Pin (Internal 5-V Bias)
      4. 7.3.4  VDD Pin (Device Bias Supply)
      5. 7.3.5  P13 and SWS Pins
      6. 7.3.6  S13 Pin
      7. 7.3.7  IPC Pin (Intelligent Power Control Pin)
      8. 7.3.8  RUN Pin (Driver and Bias Source for Isolator)
      9. 7.3.9  PWMH and AGND Pins
      10. 7.3.10 PWML and PGND Pins
      11. 7.3.11 SET Pin
      12. 7.3.12 RTZ Pin (Sets Delay for Transition Time to Zero)
      13. 7.3.13 RDM Pin (Sets Synthesized Demagnetization Time for ZVS Tuning)
      14. 7.3.14 XCD Pin
      15. 7.3.15 CS, VS, and FLT Pins
    4. 7.4 Device Functional Modes
      1. 7.4.1  Adaptive ZVS Control with Auto-Tuning
      2. 7.4.2  Dead-Time Optimization
      3. 7.4.3  EMI Dither and Dither Fading Function
      4. 7.4.4  Control Law Across Entire Load Range
      5. 7.4.5  Adaptive Amplitude Modulation (AAM)
      6. 7.4.6  Adaptive Burst Mode (ABM)
      7. 7.4.7  Low Power Mode (LPM)
      8. 7.4.8  First Standby Power Mode (SBP1)
      9. 7.4.9  Second Standby Power Mode (SBP2)
      10. 7.4.10 Startup Sequence
      11. 7.4.11 Survival Mode of VDD (INT_STOP)
      12. 7.4.12 System Fault Protections
        1. 7.4.12.1  Brown-In and Brown-Out
        2. 7.4.12.2  Output Over-Voltage Protection (OVP)
        3. 7.4.12.3  Input Over Voltage Protection (IOVP)
        4. 7.4.12.4  Over-Temperature Protection (OTP) on FLT Pin
        5. 7.4.12.5  Over-Temperature Protection (OTP) on CS Pin
        6. 7.4.12.6  Programmable Over-Power Protection (OPP)
        7. 7.4.12.7  Peak Power Limit (PPL)
        8. 7.4.12.8  Output Short-Circuit Protection (SCP)
        9. 7.4.12.9  Over-Current Protection (OCP)
        10. 7.4.12.10 External Shutdown
        11. 7.4.12.11 Internal Thermal Shutdown
      13. 7.4.13 Pin Open/Short Protections
        1. 7.4.13.1 Protections on CS pin Fault
        2. 7.4.13.2 Protections on P13 pin Fault
        3. 7.4.13.3 Protections on RDM and RTZ pin Faults
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application Circuit
      1. 8.2.1 Design Requirements for a 60-W, 15-V ZVSF Bias Supply Application with a DC Input
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Bulk Capacitance and Minimum Bulk Voltage
        2. 8.2.2.2 Transformer Calculations
          1. 8.2.2.2.1 Primary-to-Secondary Turns Ratio (NPS)
          2. 8.2.2.2.2 Primary Magnetizing Inductance (LM)
          3. 8.2.2.2.3 Primary Winding Turns (NP)
          4. 8.2.2.2.4 Secondary Winding Turns (NS)
          5. 8.2.2.2.5 Auxiliary Winding Turns (NA)
          6. 8.2.2.2.6 Winding and Magnetic Core Materials
        3. 8.2.2.3 Calculation of ZVS Sensing Network
        4. 8.2.2.4 Calculation of BUR Pin Resistances
        5. 8.2.2.5 Calculation of Compensation Network
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1  General Considerations
      2. 10.1.2  RDM and RTZ Pins
      3. 10.1.3  SWS Pin
      4. 10.1.4  VS Pin
      5. 10.1.5  BUR Pin
      6. 10.1.6  FB Pin
      7. 10.1.7  CS Pin
      8. 10.1.8  AGND Pin
      9. 10.1.9  PGND Pin
      10. 10.1.10 Thermal Pad
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Receiving Notification of Documentation Updates
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information
  13. 重要声明
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UCC28781-Q1 具有专用同步整流器栅极驱动的零电压开关反激式控制器

本资源的原文使用英文撰写。 为方便起见,TI 提供了译文;由于翻译过程中可能使用了自动化工具,TI 不保证译文的准确性。 为确认准确性,请务必访问 ti.com 参考最新的英文版本(控制文档)。

1 特性

  • 符合面向汽车应用的 AEC-Q100 标准:
    • 温度等级 1,TA:–40°C 至 125°C
    • 器件 HBM ESD 分类等级 2
    • 器件 CDM ESD 分类等级 C2A
  • 提供功能安全
    • 可帮助进行功能安全系统设计的文档
  • 开关频率:> 500 kHz
  • 实现超过 93% 的峰值效率
  • 实现小于 50mW 的待机功耗(基本系统)
  • 零电压开关 (ZVS) 自适应控制和死区时间优化
  • EMI 频率抖动,无需权衡瞬态响应或可闻噪声
  • 具有内部补偿的可编程自适应突发模式 (ABM)
  • 过热、过压、输出短路、过流、过功率和引脚故障保护
  • 自动恢复故障响应
  • 4 mm × 4 mm 24 引脚 QFN 封装

2 应用

  • 牵引逆变器
  • 辅助偏置电源
  • 便携式直流充电器
  • 直流或交流充电(桩)站
  • 直流/直流转换器

3 说明

UCC28781-Q1 是一款零电压开关 (ZVS) 控制器,可用于超高开关频率,从而充分减小变压器尺寸并实现高功率密度。

该控制器采用直接同步整流器 (SR) 控制,可直接驱动 SR FET,充分提高效率并简化设计,因此无需独立 SR 控制器。(隔离式应用需要隔离式栅极驱动器 IC。)

ZVS 采用自适应死区时间控制,可有效降低开关损耗和 EMI。该设计使控制器在整个工作范围内具有极高转换效率。

可编程自适应突发模式 (ABM) 可灵活控制控制器进入和退出待机模式的时机,从而降低轻负载和空载待机功耗。ABM 还有助于减少纹波并有效降低可闻噪声。

该控制器提供多种具有自动重启(重试)响应功能的保护模式。

器件信息
器件型号 封装(1) 封装尺寸
UCC28781-Q1 WQFN (24) 4.00mm × 4.00mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附录。
GUID-20211012-SS0I-2DSV-D99V-D77PN0CW52X2-low.gif简化版应用

4 Revision History

DATE REVISION NOTES
November 2021 * Initial release.

5 Pin Configuration and Functions

Figure 5-1 RTW Package, 24-Pin WQFN (Top View)
Table 5-1 Pin Functions
PIN TYPE(1) DESCRIPTION
NAME NO.
FLT 1 I The controller enters into the fault state if the FLT-pin voltage is pulled above 4.5 V or below 0.5 V. A 50-µA current source interfaces directly with an external NTC (negative temperature coefficient) thermistor to AGND pin for remote temperature sensing. The current source is active during the run state and inactive during the wait state. A 50-µs fault delay allows a filter capacitor to be placed on the FLT pin without false triggering the 0.5-V OTP fault when the controller enters into a run state from a wait state. Alternatively, a high-resistance voltage divider can be used to sense the bulk input capacitor voltage for line-OVP detection, and a 750-µs fault delay helps to prevent false triggering the 4.5-V input line-OVP from a short-duration bulk capacitor voltage overshoot during line surge and ESD strike events. When FLT-pin voltage is used for line-OVP detection, the external OTP can be implemented on CS pin.
RTZ 2 I A resistor between this pin and AGND pin programs an adaptive delay for transition to zero voltage from the turn-off edge of the PWMH signal to the turn-on edge of the PWML signal. Parasitic capacitance between this pin and any other net, including AGND, must be minimized to avoid noise coupling and its effect on the dead-time calculation.
RDM 3 I A resistor between this pin and AGND pin programs a synthesized demagnetization time used to control the on-time of the PWMH signal to achieve zero voltage switching on the primary switch. The controller applies a voltage on this pin that varies with the output voltage derived from the VS pin signal. Parasitic capacitance between this pin and any other net, including AGND, must be minimized to avoid noise coupling and its effect on the internal PWMH on-time calculation.
IPC 4 I This pin is an intelligent power control (IPC) pin to optimize the converter efficiency. A 50-µA current source directly interfaces with a resistor (RIPC) to AGND pin to program an increase in the peak current level at very light load; the burst frequency can be further reduced, helping to achieve low standby power and tiny-load power. If the IPC pin is connected to AGND without RIPC, the peak current level in very light load is set to a minimum level for the output ripple or audible noise sensitive designs. RIPC can also be connected between this pin and the CS pin or IPC pin can be directly connected to CS pin, so the 50-µA IPC current can create an output voltage dependent offset voltage on the CS pin for reducing output ripple in adaptive burst mode and improving light-load efficiency at lower output voltage level of a wide output voltage range design.
BUR 5 I This pin is used to program the burst threshold of the converter at light load. A resistor divider between REF and AGND is used to set a voltage at BUR to determine the peak current level when the converter enters adaptive burst mode (ABM). In addition, the Thevenin resistance on BUR is used to activate offset voltages for smooth mode transitions. A 2.7-µA pull up current increases the peak current threshold when the converter enters low-power mode (LPM) from ABM. A 5-µA pull down current reduces the peak current threshold when the converter enters into high-power mode (adaptive amplitude modulation, AAM) from ABM.
FB 6 I A current signal is coupled to this pin to close the converter regulation feedback loop. This pin presents a 4.25-V output that is designed to have 0-µA to 75-µA current pulled out of the pin corresponding to the converter operating from full-power to zero-power conditions. A 220-pF filter capacitor between FB pin and REF pin is recommended to desensitize the feedback signal from noise interference.
REF 7 O This pin is a 5-V reference output that requires a 0.22-µF ceramic bypass capacitor to the AGND pin. This reference is used to power internal circuits and can supply a limited external load current. Pulling this pin low shuts down PWM action and initiates a VDD restart.
AGND 8 G Analog ground and the ground return of PWMH and RUN drivers. Return all analog control signals to this ground.
CS 9 I This is the current-sense input pin. This pin couples to the current-sense resistor through a line-compensation resistor to control the peak primary current in each switching cycle. An internal current source on this pin, proportional to the converter’s input voltage, creates an offset voltage across the line-compensation resistor to balance the over-power protection (OPP) threshold level across input line. The CS pin can also provide an alternative OTP function, when the FLT pin is being used for the line input-OVP. A small-signal diode in series with an NTC resistor is connected between PWMH pin and CS pin to form the OTP detection. When PWMH is high, the NTC resistor and the line-compensation resistor become a resistor divider from 5 V and creates a temperature dependent voltage on CS pin. When CS pin voltage is higher than 1.2 V in PWMH on state for 2 consecutive cycles, the OTP fault on CS pin is triggered.
RUN 10 O This output pin is high when the controller is in the run state. This output is low during start-up, wait, and fault states. A 2.2-µs timer delays the initiation of PWML switching after this pin has gone high and S13-pin voltage is above its 10-V power-good threshold. The pull-up driving capability of both RUN and PWMH pins allows bias power management of a digital isolator through a common-cathode small-signal diode, so the power consumption can be reduced in the wait state.
PGND 11 G Low-side ground return of the PWML driver to the primary switch. The internal level shifter allows the common return impedance to be eliminated and improves higher frequency operation by decoupling the additional voltage spike on the current-sense resistor and layout parasitic inductance of the gate driving loop. For a silicon (Si) power FET, this pin can be connected to the source for a smaller gate driving loop. For a GaN power IC with a logic PWM input, this pin can be connected to AGND.

For a GaN-based gate-injection transistor (GIT), this pin can be directly connected to the separate source pin of a GIT GaN device, which enhances the turn-off speed.

PWML 12 O Primary switch gate driver output. The high-current capability (-0.5A/+1.9A) of PWML enables driving of a silicon power MOSFET with higher capacitive loading, a GIT GaN with continuous on-state current, or a GaN power IC with logic input. The maximum voltage level of PWML is clamped to the P13 pin voltage.
S13 13 O S13 is a switched bias-voltage source coupled to P13 through an internal 2.8-Ω switch controlled by the RUN pin. When RUN is high, the S13 decoupling capacitor is charged up to 13 V by an internal current limiter. The S13 pin voltage must increase above 10 V to initiate PWML switching. When RUN is low, S13 is discharged by its load. The power-on delay of any device powered by S13 must be less than 2 µs to be responsive to PWML. A 22-nF ceramic capacitor between S13 and the driver ground is recommended. S13 can also perform power management on a PFC controller at the same time through a diode, such that PFC can be disabled at very light-load condition.
P13 14 O P13 is a regulated 13-V bias-voltage source derived from VVDD. During VVDD startup, P13 pin is connected to the VDD pin internally, so an external high-voltage depletion MOSFET, such as BSS126, can provide controlled startup current to charge the VDD capacitor. After the initial startup, P13 recovers back to 13-V regulation. A 1-µF ceramic bypass capacitor is required from P13 to AGND. A 20-V Zener diode between P13 and AGND is recommended to protect this pin from overstress, such as if the connection between this pin and the depletion MOSFET gate is fail-open or if line surge energy is coupled to this pin.
PWMH 15 O PWM output signal used to control the gate of a secondary-side synchronous rectifier (SR) MOSFET through an external isolating gate driver. The driving capability is designed to bias a level-shifting isolator through a small-signal diode, or can also transmit the signal to secondary-side driving circuitry through a pulse transformer. The maximum voltage level of PWMH is clamped to REF.
SWS 16 I This sensing input is used to monitor the switch-node voltage as it nears zero volts in normal operation for ZVS auto-tuning. The source of a high-voltage depletion-mode MOSFET, such as BSS126, is coupled to this pin through a current-limiting resistor so only the useful switching characteristic below 15 V is monitored. During start-up, this pin is connected to the VDD pin internally to allow the depletion-mode MOSFET to provide start-up current. The external current-limit resistor and a small bidirectional TVS across gate and source should be added to protect the VGS from potential abnormal voltage stress. The resistor should be higher than 500 Ω and less than 820 Ω. The clamping voltage of TVS should be less than the MOSFET voltage rating but greater than 15 V. Moreover, the resistor and a 22-pF ceramic capacitor between the SWS pin and the bulk input capacitor ground form a small sensing delay to help the internal detection circuit to identify the ZVS characteristic correctly.
XCD 17, 18 I X-cap Discharge input pins with 2-mA maximum discharge current capability. A line zero-crossing (LZC) threshold of 6.5 V on XCD is used to detect AC-line presence. When LZC is not detected within an 84-ms test period, the discharge current is enabled for a maximum period of 300 ms followed by a no-current blanking time of 700 ms. When AC-line recovers and LZC is detected again, the controller can reset the fault state almost immediately and will attempt to restart without waiting to fully discharge the bulk input capacitor. For the auto-recovery fault protections, if the controller is in 1.5-s auto-recovery fault state, LZC can reset the timer and speed up the restart attempt. The two redundant XCD pins help to provide the X-cap discharge function even when one pin is in fail-open condition. To form the discharge path, an anode of two high-voltage diode rectifiers is connected to each X-cap terminal, the two diode cathodes are connected together to a 26-kΩ high-voltage current-limiting resistance, and the drain-to-source connection of a high-voltage depletion MOSFET couples the resistance to the XCD pins. Two series 13-kΩ SMD resistors in 1206 size can be used as the current limiting device, and share the potential transient voltage from the AC-line. A 600-V rated MOSFET such as BSS126 is needed as the high voltage blocking device. The MOSFET gate is connected to the P13 pin, so the XCD pins can obtain enough signal headroom for LZC detection. If the X-cap discharge function is not needed, XCD pins must be connected to AGND pin to disable the function, and the diode-resistor-MOSFET path must be removed.
VDD 19 P Controller bias power input. A ceramic capacitor with 10-µF or 15-µF capacitance is recommended, and the minimum voltage rating is 25 V.
GTP1 20 G Ground This Pin. This pin must be connected to AGND for proper operation of the device.
GTP2 21 G Ground This Pin. This pin must be connected to AGND for proper operation of the device.
GTP3 22 G Ground This Pin. This pin must be connected to AGND for proper operation of the device.
VS 23 I This voltage-sensing input pin is coupled to an auxiliary winding of the converter’s transformer via a resistor divider. The pin and associated external resistors are used to monitor the output and input voltages and switching edges of the converter at different moments within each switching cycle. Parasitic capacitance between VS and any net, including AGND, must be minimized to avoid adverse effects on output voltage sensing, edge detection, and the dead-time calculation.
SET 24 I This pin is used to configure the controller to be optimized for gallium nitride (GaN) power FETs or silicon (Si) power FETs on the primary side. Depending on the setting, it will optimize parameters of the ZVS control loop, dead-time adjustment, and protection features. When pulled high to REF pin, it is optimized for Si FETs. When pulled low to AGND, it is optimized for GaN FETs.
Thermal Pad G The thermal pad (TP) must be connected to AGND.
(1) I = input, O = output, I/O = input or output, FB = feedback, G = ground, P = power

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Input Voltage VDD 38 V
SWS –6 38
SWS (transient, negative pulse width of 20 ns max., duty cycle ≤ 1%) –10 38
VDD-SWS –20 38
CS –0.3 3.6
VS –0.75 7
VS (transient, 100 ns max.) –1 7
PGND –1 4
PGND (transient, 25 ns max.) 5
RTZ, BUR, SET, RDM, IPC, FLT, FB –0.3 7
XCD –0.3 30
Output Voltage REF, PWMH, RUN –0.3 7 V
P13, S13, PWML –0.3 20
Source Current REF, P13, RTZ, RDM, IPC Self–limiting mA
S13 (average) 15
VS 2
VS (transient, 100 ns max.) 2.5
FB 1
RUN (continuous) 5
PWML (continuous) 50
PWMH (continuous) 10
CS (transient, 30 ns max.) 1
Sink Current RUN (continuous) 8 mA
PWML (continuous) 50
PWMH (continuous) 10
SWS Self–limiting
XCD 25
FLT 0.3
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

6.2 ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman body model (HBM), per AEC Q100-002(1)±2000V
Charged device model (CDM), per AEC Q100-011±500
(1) AEC Q100-002 indicates that HBM stressing must be in accordance with the ANSI/ESDA/JEDC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MINNOMMAXUNIT
VVDDBias supply operating voltage1434V
CVDDVDD capacitor10µF
CP13P13 bypass capacitor1µF
CREFREF bypass capacitor0.22µF
TJOperating junction temperature–40140°C

6.4 Thermal Information

THERMAL METRIC(1)UCC28781-Q1UNIT
RTW (WQFN)
24 PINS
RθJAJunction-to-ambient thermal resistance43.1°C/W
RθJC(top)Junction-to-case (top) thermal resistance31.6°C/W
RθJBJunction-to-board thermal resistance20.3°C/W
ΨJTJunction-to-top characterization parameter0.5°C/W
ΨJBJunction-to-board characterization parameter20.3°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistance5.7°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

Unless otherwise stated: VVDD = 20 V, RRDM = 115 kΩ, RRTZ = 140 kΩ, VBUR = 1.2 V, VSET = 0 V, RNTC = 50 kΩ, VVS = 4 V, VSWS = 0 V, IFB = 0 μA, CPWML = 0 pF, CPWMH = 0 pF, CREF = 0.22 µF, CP13 = 1 µF, and -40⁰C < TJ = TA < 125⁰C
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VDD INPUT
IRUN(STOP)Supply current, run stateNo switching0.882.22.66mA
IRUN(SW)Supply current, run stateSwitching, IVSL = 0 µA2.4533.55mA
IWAITSupply current, wait stateIFB = -85 µA, IVDD only465540658µA
ISTARTSupply current, start stateVVDD = VVDD(ON) - 100 mV, VVS = 0 V150235301µA
IFAULTSupply current, fault statefault state500630µA
IVDD(LIMIT)VDD startup current limit during startupVVDD increasing, VSWS - VVDD = 1 V, VVDD = 16.5 V1.222.53mA
VVDD(ON)VDD turnon thresholdVVDD increasing16.21717.91V
VVDD(OFF)VDD turnoff thresholdVVDD decreasing9.9410.611.17V
VVDD(PCT)Offset to power cycle for long output voltage overshootOffset above VVDD(OFF), IFB = -85 µA1.542.22.98V
P13 OUTPUT
VP13P13 voltage level including load regulation0 mA to 60 mA out of P13, run state, VVDD = 20 V12.012.813.6V
IP13(START)Max sink current of P13 pin during startupVP13 = 14 V1.532.23.04mA
IP13(MAX)Current sourcing limit of P13 pinP13 shorted to AGND, VVDD = 20 V103.3133160mA
VR13(LINE)Line regulation of VP13VVDD = 15 V to 35 V-628.7mV
VP13(OV)Over voltage fault threshold above VP131.3522.54V
RP13Dropout resistance of P13 regulator switch between VDD and P13 pins(VVDD - VP13) / 30 mA, VVDD = 11 V, 30 mA out of P138.51322.7Ω
S13 OUTPUT
RS13RDS(on) of internal disconnect switch between P13 and S13 pins(VP13 - VS13) / 30 mA, VVDD = 11 V, 30 mA out of S132.12.83.82Ω
VS13_OKS13_OK threshold to enable switchingVRUN = 5 V9.6310.210.7V
IS13(MAX)Current sourcing limit of S13 pinS13 shorted to AGND, VVDD = 20 V260.7350452.5mA
REF OUTPUT
VREFREF voltage levelIREF = 0 A4.955.13V
IREF(MAX)Current sourcing limit of REF pinREF shorted to AGND, VVDD = 20 V14.31720.3mA
VR5(LINE)Line regulation of VREFVVDD = 12 V to 35 V-7-31mV
VR5(LOAD)Load regulation of VREF0 mA to 1 mA out of REF, Change in VREF-160.125mV
VS INPUT
VVSNCNegative clamp levelIVSL = -1.25 mA, voltage below ground221287344mV
VZCDZero-crossing detection (ZCD) levelVVS decreasing12.43567.2mV
IVSBInput bias currentVVS = 4 V-0.2300.31µA
VVS(SM1)VS threshold voltage in SM1 startup mode242.4282318.3mV
VVS(SM2)VS threshold voltage in SM2 startup mode458.3500543mV
VVSLV(UP)VS upper threshold out of low output voltage mode (LV mode)VVS increasing2.412.492.6V
VVSLV(LR)VS lower threshold into low output voltage mode (LV mode)VVS decreasing2.32.392.49V
tZCZero-crossing timeout delay1.952.32.73µs
tD(ZCD)Propagation delay from ZCD high to PWML 10% highVVS step from 4 V to -0.1 V

23

50

81

ns
CS INPUT
VCST(MAX)Peak-power threshold on CS pin out of LV modeIVSL = 0 μA, VVS ≥ VVSLV(UP)767.4801836.4mV
IVSL = -333 μA, VVS ≥ VVSLV(UP)650727788.7mV
IVSL = -666 μA, VVS ≥ VVSLV(UP)570600651.8mV
IVSL = -1.25 mA, VVS ≥ VVSLV(UP)537.2570612mV
VCST(MAX)_LVPeak-power threshold on CS pin in LV modeIVSL = 0 mA, VVS ≤ VVSLV(LR)593.7628663.9mV
IVSL = -666 μA, VVS ≤ VVSLV(LR)540570609.5mV
IVSL = -1.25 mA, VVS ≤ VVSLV(LR)511.2540584.7mV
VCST(MIN)Minimum CS threshold voltageVCS increasing, IFB = -85 µA120.7153200.1mV
KLCLine-compensation current ratioIVSL = -1.25 mA, IVSL / current out of CS pin21.62529A/A
VCST(EMI)(1)EMI dithering magnitude on CS pin out of LV mode(VBUR / KBUR-CST) < VCST < VCST(MAX), IVSL > -646 μA, VVS ≥ VVSLV(UP)78.496113.6mV
VCST(EMI)_LV(1)EMI dithering magnitude on CS pin in LV mode(VBUR / KBUR-CST) < VCST < VCST(MAX), IVSL > -646 μA, VVS ≤ VVSLV(LR)29.33642.7mV
VCST(SM1)CS threshold voltage in SM1 startup modeVVS < VVS(SM1)177.5200222.9mV
VCST(SM2)CS threshold voltage in SM2 startup modeVVS < VVS(SM2)470.4500531.4mV
tCSLEBLeading-edge-blanking timeVSET = 5 V, VCS = 1 V171.2190216.1ns
VSET = 0 V, VCS = 1 V94.4108125ns
tD(CS)Propagation delay of CS comparator high to PWML 90 % lowVCS step from 0 V to 1 V102637ns
fDITHER(1)EMI dithering frequency on CS pin(VBUR / KBUR-CST) < VCST < VCST(OPP), IVSL > -646 μA202327kHz
BUR INPUT and Low-power MODE
KBUR-CSTRatio of VBUR to VCSTVBUR between 0.7 V and 2.4 V3.823.984.09V/V
IBUR(LPM)Bias source current of VBUR offset in LPM2.092.653.16µA
IBUR(AAM)Bias sink current of VBUR offset in AAMVCST > VBUR / KBUR-CST3.764.855.81µA
fBUR(UP1)First upper threshold of burst frequency in ABM30.734.438.5kHz
fBUR(UP2)Second upper threshold of burst frequency in ABMVVS = 2.2 V41.851.258.9kHz
fBUR(LR)Lower threshold of burst frequency in ABM21.324.528.1kHz
fLPMBurst frequency in low-power mode23.32526.9kHz
IPC INPUT and SBP2 MODE
VCST_IPC(UP)Highest programmable VCST range of SBP2 by IPC pinVIPC = 5 V373.8405438.5mV
KIPCRatio of the programmable IPC voltage to VCSTVIPC between 1.8 V and 3.8 V59.36468.4mV/V
VCST_IPC(LR)Lowest programmable VCST range of SBP2 by IPC pinVIPC = 1 V247.5273307.7mV
VCST_IPC(MIN)Minimum VCST of SBP2 by grounding IPC pinVIPC = 0 V128.1154191.5mV
IIPC(SBP2)Bias source current of VIPC offset in SBP2IFB = -85 µA40.74955.7µA
fSBP2(UP)Upper threshold of burst frequency in SBP268.513.4kHz
fSBP2(LR)Lower threshold of burst frequency in SBP2VIPC = 2 V11.72kHz
RUN
VRUNHRUN pin high-levelIRUN = -0.2 mA4.64.785V
VRUNLRUN pin low-levelIRUN = 1 mA

0.1

0.25

0.3

V

ISRC(RUN)RUN peak source currentVRUN = 2.3 V334452mA
VRUN = 3 V142025mA
tR(RUN)Turn-on rise time of RUN pin, from 0 V to 2.5 VCLOAD = 22 nF, VRUN from 0 V to 2.5 V0.20.791µs
tF(RUN)Turn-off fall time of RUN pin, 90 % to 10 %CLOAD = 10 pF2032ns
PWML
VPWMLHPWML pin high-levelIPWML = -1 mA12.112.8513.6V
VPWMLLPWML pin low-levelIPWML = 1 mA0.0020.1V
ISRC(PWML)(1)PWML peak source currentVPWML = 0 V0.250.50.8A
ISNK(PWML)(1)PWML peak sink currentVPWML = 13 V1.21.92.8A
RSRC(PWML)PWML pull-up resistanceIPWML = -20 mA3.14.36.1Ω
RSNK(PWML)PWML pull-down resistanceIPWML = 20 mA0.51.11.9Ω
tR(PWML)Turn-on rise time of PWML pin, 10 % to 90 %CLOAD = 1.5 nF3053ns
tF(PWML)Turn-off fall time of PWML pin, 90 % to 10 %CLOAD = 1.5 nF920ns
tD(RUN-PWML)Delay from RUN high to PWML highVS13 > 11 V1.924.77.43µs
tON(MIN)Minimum on-time of PWML in LPMVSET = 5 V, IFB = -85 µA, VCS = 1 V

68

105

180

ns

PWMH
VPWMHHPWMH pin high-levelIPWMH = -1 mA4.394.664.83V
VPWMHLPWMH pin low-levelIPWMH = 1 mA

0.1

0.198

0.21

V

ISRC(PWMH)PWMH peak source currentVPWMH = 2.5 V16.52126.2mA
VPWMH = 3.5 V3.867.6mA
tR(PWMH)Turn-on rise time of PWMH pin, 10 % to 90 %CLOAD = 10 pF

8

24

ns

tF(PWMH)Turn-off fall time of PWMH pin, 90 % to 10 %CLOAD = 10 pF2229ns
tD(VS-PWMH)Dead time between VS high and PWMH 10 % high101828ns
PROTECTION
VOVPOver-voltage thresholdVVS increasing4.44.554.67V
VOCPOver-current thresholdVCS increasing1.141.221.27V
KOPP-PPLRatio of over-power threshold to peak-power thresholdVCST(OPP) / VCST(MAX) , and VCST(OPP)_LV / VCST(MAX)_LV0.720.750.78V/V
IVSL(RUN)VS line-sense run currentCurrent out of VS pin increasing313365408.6µA
IVSL(STOP)VS line-sense stop currentCurrent out of VS pin decreasing255305336.4µA
KVSLVS line sense ratioIVSL(STOP) / IVSL(RUN)0.720.8360.9A/A
RRDM(TH)RRDM threshold for CS pin fault355570kΩ
TJ(STOP)(1)Thermal-shutdown temperatureInternal junction temperature125162°C
tOPPOPP fault timerIFB = 0 A130164210ms
tBOBrown-out detection delay timeIVSL < IVSL(STOP)28.85585.2ms
tCSF1Maximum PWML on-time for detecting CS pin faultVSET = 5 V1.62.052.5µs
tCSF0Maximum PWML on-time for detecting CS pin faultRRDM < RRDM(TH) for VSET = 0 V0.851.051.27µs
tFDRFault reset delay timerOCP, OPP, OVP, SCP or CS pin fault

1.2

1.5

2.4

s

FLT INPUT
VNTCTHNTC shut-down voltageFLT voltage decreasing0.470.50.52V
RNTCTHNTC shut-down resistanceRNTC decreasing8.99.9111.18kΩ
RNTCRNTC recovery resistanceRNTC increasing21.22326.4kΩ
IFLTInput bias current for VFLT at VIOVPTHVFLT = 4.5 V-0.100.1µA
VIOVPTHShut-down voltage of input OVPFLT voltage increasing4.34.54.67V
VIOVPRHysteresis of input OVPFLT voltage increasing57.77487mV
tFLT(NTC)Delay time of NTC fault1450

100

µs
tFLT(IOVP)Delay time of input OVP fault555750917µs
VFLTZClamp voltage of FLT pinIFLT = 150 µA5.085.55.61V
RTZ INPUT
KTZtZ compensation ratioratio of tZ at IVSL = -200 µA to tZ at IVSL = -733 µA1.271.411.54s/s
tZ(MAX)Maximum programmable dead time from PWMH low to PWML highRRTZ = 280 kΩ, IVSL = -1 mA, VSET = 5 V397.8478592.8ns
tZ(MIN)Minimum programmable dead time from PWMH low to PWML highRRTZ = 78.4 kΩ, IVSL = -1 mA, VSET = 0 V56.17089.1ns
tZDead time from PWMH low to PWML highIVSL = -200 µA152.2175212.7ns
IVSL = -450 µA129.2150190ns
IVSL = -733 µA109.7125147.2ns
SWS INPUT
VTH(SWS)SWS zero voltage thresholdVSET = 5 V8.18.59.1V
VSET = 0 V3.74.044.4V
tD(SWS-PWML)Time between SWS low to PWML 10 % highVSWS step from 5 V to 0 V11.41726ns
FB INPUT
IFB(SBP)Maximum control FB currentIFB increasing64.27587.1µA
VFB(REG)Regulated FB voltage level4.024.254.53V
RFBIFB input resistance7.48.39.6kΩ
dICOMP/dt(1)Slope of internal ramp compensation current0.1920.2140.236A/s
ICOMPMagnitude of internal ramp compensation current46.758µA
RDM INPUT
tDM(MAX)Maximum PWMH width with maximum tuningVSWS = 12 V6.06.957.53µs
tDM(MIN)Minimum PWMH width with minimum tuningVSWS = 0 V3.03.433.77µs
XCD INPUT
VXCD(LR)XCD lower zero-crossing threshold5.96.627.2V
VXCD(UP)XCD upper zero-crossing threshold6.87.57.9V
IXCD(0)Leakage current in XCD wait stateVXCD = 15 V0.31.7µA
IXCD(1)First-step XCD sense currentVXCD = 15 V0.320.40.46mA
IXCD(2)Second-step XCD sense currentVXCD = 15 V0.610.7750.91mA
IXCD(3)Third-step XCD sense currentVXCD = 15 V0.731.151.6mA
IXCD(4)Fourth-step XCD sense currentVXCD = 15 V1.21.531.81mA
IXCD(MAX)Maximum XCD discharge currentVXCD = 15 V1.6522.5mA
VXCD(OVP)Clamp voltage of XCD OVPIXCD = 20 mA232630V
tXCD(STEP)Dwell time for each XCD sense step91214.6ms
tXCD(MAX)Maximum XCD discharge time230.4300373.3ms
tXCD(WAIT)XCD wait time7001071ms
(1) Ensured by design, not tested in production

6.6 Typical Characteristics

VVDD = 20 V, RRDM = 115 kΩ, RRTZ = 140 kΩ, VSET = 0 V, and TJ = TA = 25 ⁰C (unless otherwise noted)

GUID-8BAEB66E-0AFE-439B-B965-6EA544A1D355-low.gif
Figure 6-1 VDD Bias-Supply Current vs. VDD Bias-Supply Voltage
GUID-9F3E5F0A-6A8A-481F-BE95-6CBD8B698541-low.gif
Figure 6-3 VS Line-Sense Currents vs. Temperature
GUID-6CA0503E-05A9-4F19-AEB5-2F1B254018CB-low.gif
Figure 6-5 CS Peak-Power Threshold for VVS > VVSLV(UP) vs. VS Line-Sense Currents
GUID-B120A295-C383-4F7B-B1E2-0992BE8E81F5-low.gif
Figure 6-7 tZ Compensation Ratio (KTZ) vs. VS Line-Sense Currents
GUID-38D4A1CB-5325-45E3-846E-A7523FDA28AD-low.gif
Figure 6-9 REF Voltage vs. Temperature
GUID-AB08BEE6-3A7D-4101-A2AE-29A633EB14D3-low.gif
Figure 6-11 FLT OTP Thresholds vs. Junction Temperature
GUID-A3A705F8-2395-4CCC-B667-601FA3570281-low.gif
A.
Figure 6-13 Max. XCD Discharge Current vs. Junction Temperature
GUID-520EEA58-9028-42E3-AC0A-A4238C0BAEF2-low.gif
Figure 6-2 VDD Bias-Supply Current vs. Temperature
GUID-ECBFEC36-1BEA-410E-83A2-2AA324DF6418-low.gif
Figure 6-4 Percentage Variation of Maximum and Minimum CS Thresholds vs. Temperature
GUID-DC8E0C7A-3E1E-4E77-8D5A-0464BDF12019-low.gif
A.
Figure 6-6 CS Peak-Power Threshold for VVS < VVSLV(LR) vs. VS Line-Sense Currents
GUID-91FB845F-DD79-49B8-B62D-85B45C08B100-low.gif
Figure 6-8 VS Over-Voltage Threshold vs. Temperature
GUID-CCE0E1EF-1608-4ADD-A599-AFA5FC00CD60-low.gif
Figure 6-10 P13 Voltage vs. Temperature
GUID-6336666E-1E79-4E62-A96C-294C3CB8CF1B-low.gif
Figure 6-12 XCD Thresholds vs. Junction Temperature

7 Detailed Description

7.1 Overview

The UCC28781-Q1 is a transition-mode zero-voltage-switching flyback (ZVSF) controller equipped with advanced control schemes to enable significant size reduction of passive components for higher power density and higher average efficiency. Its control law is optimized for Silicon (Si) and Gallium Nitride (GaN) power FETs in a single-switch flyback configuration at high frequencies. In burst mode at very light loads the switching frequency may increase up to 1.5 MHz.

The ZVSF control of the UCC28781-Q1 is capable of auto-tuning the on-time of a secondary-side synchronous rectifier switch (QSR) by using a unique lossless ZVS-sensing network connected between the switch-node voltage (VSW) and the SWS pin. The ZVSF controller is designed to adaptively achieve targeted full-ZVS or partial-ZVS conditions for the primary-side main switch (QL) with minimum circulating energy over wide operating conditions. Auto-tuning eliminates the risk of losing ZVS due to component tolerance, temperature, and input/output voltage variations, since the QSR on-time is corrected cycle-by-cycle.

Dead-times between PWML (controls QL) and PWMH (controls QSR) are optimally adjusted to help minimize the circulating energy required for ZVS as operating conditions change. Therefore, the overall system efficiency is improved and more consistent in mass production of the soft-switching topology. The programming features of the RTZ, RDM, BUR, IPC, and SET pins provide rich flexibility to optimize the power stage efficiency across a range of output power and operating frequency levels.

The UCC28781-Q1 uses five different steady-state operating modes to maximize efficiency over wide load and line ranges:

  1. At higher load levels, adaptive amplitude modulation (AAM) adjusts the peak primary current.
  2. In the medium-load range, adaptive burst mode (ABM) modulates the pulse count of each burst packet.
  3. In the light-load range, low power mode (LPM) reduces the peak primary current of each two-pulse burst packet.
  4. During very light-load conditions, stand-by power mode 1 (SBP1) minimizes the power loss.
  5. During no-load conditions, stand-by power mode 2 (SBP2) minimizes the power loss.

During the system transient events such as the output load step down and output voltage overshoots, VVDD may be reduced close to the 10.5-V UVLO-off threshold. In such cases, a sixth non-steady-state mode called survival mode (SM) is triggered to maintain VVDD above 13 V and to reduce the size of the hold-up VDD capacitor.

The switching frequency-dither function is active in AAM to help reduce conducted-EMI noise and allow EMI filter size reduction. The 23-kHz dithering pattern and magnitude are designed to avoid audible noise, minimize efficiency influence, and desensitize the effect of the output voltage feedback loop response effect on the EMI attenuation. The dither function at low line can be programmed into disable mode based on the brown-in voltage setting, so the option provides design flexibility to balance the worst-case low-line efficiency and EMI. The dither fading feature smoothly disables the dither signal when the output load is close to the transition point between AAM and ABM. The 23-kHz dither frequency is high enough to allow a higher control-loop bandwidth for improved load transient response without distorting the dither signal and impairing EMI.

The unique burst mode control in ABM, LPM, and two SBP modes maximizes the light-load efficiency of the ZVSF power stage while avoiding the concerns of conventional burst operation - such as high output ripple and audible noise. The internal ramp compensation can stabilize the burst control loop without an external compensation network. The burst control provides an enable signal through the RUN pin to dynamically manage the static current of the SR gate-driver and also adaptively disables the drive signal of QSR. The internal drivers of RUN and PWMH can supply and disconnect the 5-V bias voltage to a digital isolator through a small-signal diode. The disconnect switch inside the S13 pin can directly control the 13-V bias voltage to a low-side GaN driver. These power management functions with RUN, PWMH, and S13 pins can be used to minimize the quiescent power consumed by those devices during burst off time, further improving the converter’s light-load efficiency and reducing its stand-by power.

The S13 and IPC pins of the UCC28781-Q1 can be adapted to manage an upstream PFC stage to maximize the light-load efficiency of higher power applications. The S13 pin can supply a 13-V bias voltage to the PFC controller whenever the ZVSF controller is in the run state. The pin disconnects the bias voltage during the wait states of the burst mode operation. When the burst frequency is reduced in very light load conditions, the bias voltage will decay below UVLO and shut down PFC controller, so the power loss from PFC can be eliminated.

The PWML output is a strong driver for a Si power MOSFET with high capacitive loading, a GaN-based gate injection transistor (GIT) with continuous on-state current, or a GaN power IC with logic input. The maximum voltage level of PWML is clamped at 13 V to balance the conduction loss reduction and gate charge loss of Si MOSFET. A dedicated driver ground return pin (PGND) minimizes the parasitic impedance and noise coupling of the PWML gate-drive loop to achieve faster switching speed and reduced turn-off loss of QL. The short 15-ns propagation delay and narrow 110-ns minimum on-time enable more accurate ZVS control and higher switching frequency operation.

During initial power up or VDD restart, the ZVSF stops switching, so UCC28781-Q1 starts up the VDD supply voltage with an external high-voltage depletion-mode MOSFET between the ZVSF switch node and the SWS pin. Fast startup is achieved with low stand-by power overhead, compared with using the conventional high-voltage startup resistance to VDD. Moreover, the P13 pin biases the gate of the depletion-mode FET to also allow this MOSFET to be used in lossless ZVS-sensing. This arrangement avoids additional sensing devices.

The enhanced switching control of UCC28781-Q1 mitigates excessive drain-to-source voltage stress on a synchronous rectifier (SR) caused by temporary continuous conduction mode (CCM), so the power loss of an SR snubber can be reduced for higher efficiency. Additional PWML timing controls can avoid premature QL turn-on before the magnetizing current reaches to zero through an improved zero-crossing detection (ZCD) scheme of the VS pin.

The UCC28781-Q1 also integrates more robust protection features tailored to maximize system reliability and safety. These features include active X-capacitor discharge, internal soft start, brown in/out, output over-voltage (OVP), input line over-voltage (IOVP), output over-power (OPP), system over-temperature (OTP), switch over-current (OCP), output short-circuit protection (SCP), and pin faults. All fault responses are auto-recovery, which means that the controller will attempt to restart after the shut-down time elapses.

The X-capacitor discharge function can actively discharge the residual voltage on X2 safety capacitors to a safe level after AC-line voltage removal is detected through the XCD pins of UCC28781-Q1 and its external sensing circuit. If the AC-line voltage recovers within 2 seconds after the line removal, the controller will reset the fault state immediately and will attempt to restart without waiting to fully discharge the bulk input capacitor or VDD capacitor. Grounding the two XCD pins disables this function and eliminates the sensing circuit. Unlike other conventional flyback controllers, UCC28781-Q1 provides the design flexibility of using the X-capacitor discharge function based on application power level as it is decoupled from VDD startup and brown-in/out detection functions. Since those two functions are implemented on the SWS and VS pins, respectively, UCC28781-Q1 maintains the two functions even when the XCD-related components are fully removed.

7.2 Functional Block Diagram

GUID-20211117-SS0I-CXWB-CFMH-FPNJDLFLD5XD-low.png

7.3 Detailed Pin Description

 

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