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  • 用于数字输入模块的 ISO121x 隔离式 24V 至 60V 数字输入接收器

    • ZHCSGU8E June   2017  – August 2018 ISO1211 , ISO1212

      PRODUCTION DATA.  

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  • 用于数字输入模块的 ISO121x 隔离式 24V 至 60V 数字输入接收器
  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.          应用图表
      2.      ISO121x 器件与传统解决方案相比可降低电路板温度
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
    2.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics—DC Specification
    10. 6.10 Switching Characteristics—AC Specification
    11. 6.11 Insulation Characteristics Curves
    12. 6.12 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Test Circuits
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Sinking Inputs
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Setting Current Limit and Voltage Thresholds
          2. 9.2.1.2.2 Thermal Considerations
          3. 9.2.1.2.3 Designing for 48-V Systems
          4. 9.2.1.2.4 Designing for Input Voltages Greater Than 60 V
          5. 9.2.1.2.5 Surge, ESD, and EFT Tests
          6. 9.2.1.2.6 Multiplexing the Interface to the Host Controller
          7. 9.2.1.2.7 Status LEDs
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Sourcing Inputs
      3. 9.2.3 Sourcing and Sinking Inputs (Bidirectional Inputs)
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 相关链接
    4. 12.4 接收文档更新通知
    5. 12.5 社区资源
    6. 12.6 商标
    7. 12.7 静电放电警告
    8. 12.8 术语表
  13. 13机械、封装和可订购信息
  14. 重要声明
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DATA SHEET

用于数字输入模块的 ISO121x 隔离式 24V 至 60V 数字输入接收器

本资源的原文使用英文撰写。 为方便起见,TI 提供了译文;由于翻译过程中可能使用了自动化工具,TI 不保证译文的准确性。 为确认准确性,请务必访问 ti.com 参考最新的英文版本(控制文档)。

1 特性

  • 符合 IEC 61131-2 针对 24V 隔离式数字输入的 1、2、3 类特性标准
  • 支持 9V 至 300V 直流和交流数字输入设计(使用外部电阻器)
  • 通过精确电流限制实现低功耗:
    • 对于 3 类,电流为 2.2mA 至 2.47mA
    • 可调电流,最高为 6.5mA
  • 消除了对现场侧电源的需求
  • 具有反极性保护功能的宽输入电压范围:±60V
  • 断线检测(请参阅 TIDA-01509)
  • 可配置为拉电流或灌电流输入
  • 高数据速率:最高 4Mbps
  • 多路复用器输出信号使能引脚
  • 高瞬态抗扰性:±70kV/µs CMTI
  • 宽电源电压范围 (VCC1):2.25V 至 5.5V
  • 环境温度范围:–40°C 至 +125°C
  • 紧凑型封装选项:
    • 单通道 ISO1211,SOIC-8
    • 双通道 ISO1212,SSOP-16
  • 安全相关认证:
    • 符合 DIN V VDE V 0884-10 标准的基本绝缘
    • UL 1577 认证,2500VRMS 绝缘
    • 可提供 CSA、CQC、TUV 认证

2 应用

  • 可编程逻辑控制器 (PLC)
    • 数字输入模块
    • 混合 I/O 模块
  • 电机驱动 I/O 和位置反馈
  • CNC 控制
  • 变电站自动化
  • 数据采集
  • 二进制输入模块

3 说明

ISO1211 和 ISO1212 器件是隔离式 24V 至 60V 数字输入接收器,符合 IEC 61131-2 1 类、2 类和 3 类特性标准。这些器件可以在可编程逻辑控制器 (PLC)、电机控制、电网基础设施和其他工业应用中实现 9V 至 300V 直流和交流数字输入 模块。不同于具有分立式、不精确电流限制电路的传统光耦合器解决方案,ISO121x 器件提供具有精确电流限制的简单低功耗解决方案,可实现紧凑型和高密度 I/O 模块的设计。这些器件不需要现场侧电源,可配置为拉电流或灌电流输入。

ISO121x 器件的工作电压范围为 2.25V 至 5.5V,支持 2.5V、3.3V 和 5V 控制器。具有反极性保护的 ±60V 输入容差有助于确保输入引脚在可忽略的反向电流发生故障时受到保护。这些器件支持高达 4Mbps 的数据速率,可通过 150ns 的最小脉冲宽度,从而实现高速运行。ISO1211 器件适用于需要通道间隔离功能的设计,而 ISO1212 器件适用于多通道空间受限的设计。

与传统解决方案相比,ISO121x 器件减少了组件数量,简化了系统设计,提高了性能,降低了电路板温度。有关详细信息,请参阅《如何简化隔离式 24V PLC 数字输入模块设计》TI 技术手册、《如何提高电机驱动中的隔离式数字输入的速度和可靠性》TI 技术手册以及《如何设计用于 ±48V、110V 和 240V 直流和交流检测的隔离式比较器》TI 技术手册。

器件信息(1)

器件型号 封装 封装尺寸(标称值)
ISO1211 SOIC (8) 4.90mm × 3.91mm
ISO1212 SSOP (16) 4.90mm × 3.90mm
  1. 如需了解所有可用封装,请参阅数据表末尾的可订购产品附录。

Device Images

 
 
应用图表

ISO1211 ISO1212 slla370-iso121x-application-diagram.gif

ISO121x 器件与传统解决方案相比可降低电路板温度

ISO1211 ISO1212 iso121x-board-temperature-comparison.gif

4 修订历史记录

Changes from D Revision (March 2018) to E Revision

  • Changed VIH and VIH to VIL and VIH in the RTHR resistor description in the Setting Current Limit and Voltage Thresholds sectionGo

Changes from C Revision (February 2018) to D Revision

  • 更新了特性 和应用 部分。在说明 和相关文档 部分中添加了新的 TI 技术手册参考。Go
  • Changed the unit for CPG from µm to mm in the Insulation Specifications tableGo
  • Changed the Functional Block DiagramGo
  • Changed VIL from min to typ in the VIL equationGo
  • Added the Designing for Input Voltages Greater Than 60 V sectionGo
  • Added the bidirectional implementation example to the Sourcing and Sinking Inputs sectionGo

Changes from B Revision (September 2017) to C Revision

  • Added 将断线检测添加到特性 部分Go
  • Added 将多路复用器输出信号使能引脚添加到了特性 部分中,更改了所有需要为 DW 和 D 封装完成的认证Go
  • Changed RTHR = 5 kΩ to 4 kΩ in the High-Level Voltage Transition Threshold vs Ambient Temperature graphGo
  • Changed the Type 1 RTH value from 3 kΩ to 2.5 kΩ in the Surge, IEC ESD and EFT tableGo

Changes from A Revision (September 2017) to B Revision

  • Changed 将状态从预告信息改为生产数据Go

5 Pin Configuration and Functions

ISO1211 D Package
8-Pin SOIC
Top View
ISO1211 ISO1212 pin_config_sllu258.gif

Pin Functions

PIN I/O DESCRIPTION
NO. NAME
1 VCC1 — Power supply, side 1
2 EN I Output enable. The output pin on side 1 is enabled when the EN pin is high or open. The output pin on side 1 is in the high-impedance state when the EN pin is low. In noisy applications, tie the EN pin to VCC1.
3 OUT O Channel output
4 GND1 — Ground connection for VCC1
5 SUB — Internal connection to input chip substrate. Leave this pin unconnected on the board.
6 FGND — Field-side ground
7 IN I Field-side current input
8 SENSE I Field-side voltage sense
ISO1212 DBQ Package
16-Pin SSOP
Top View
ISO1211 ISO1212 iso1212-isolated-digital-input-receiver-pin-configuration.gif

Pin Functions

PIN I/O Description
NO. NAME
1 GND1 — Ground connection for VCC1
2 VCC1 — Power supply, side 1
3 EN I Output enable. The output pins on side 1 are enabled when the EN pin is high or open. The output pins on side 1 are in the high-impedance state when the EN pin is low. In noisy applications, tie the EN pin to VCC1.
4 OUT1 O Channel 1 output
5 OUT2 O Channel 2 output
6 NC — Not connected
7
8 GND1 — Ground connection for VCC1
9 FGND2 — Field-side ground, channel 2
10 IN2 I Field-side current input, channel 2
11 SENSE2 I Field-side voltage sense, channel 2
12 SUB2 — Internal connection to input chip 2 substrate. Leave this pin unconnected on the board.
13 SUB1 — Internal connection to input chip 1 substrate. Leave this pin unconnected on the board.
14 FGND1 — Field-side ground, channel 1
15 IN1 I Field-side current input, channel 1
16 SENSE1 I Field-side voltage sense, channel 1

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC1 Supply voltage, control side –0.5 6 V
VOUTx,
VEN
Voltage on OUTx pins and EN pin –0.5 VCC1 + 0.5(2) V
IO Output current on OUTx pins –15 15 mA
VINx, VSENSEx Voltage on IN and SENSE pins –60 60 V
V(ISO,FUNC) Functional isolation between channels in ISO1212 on the field side –60 60 V
TJ Junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

 

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