TIDT434 February   2025

 

  1.   1
  2.   Description
  3.   Features
  4.   Applications
  5. 1Test Prerequisites
    1. 1.1 Voltage and Current Requirements
    2. 1.2 Required Equipment
    3. 1.3 Dimensions
    4. 1.4 Test Setup
  6. 2Testing and Results
    1. 2.1 Efficiency Graphs
    2. 2.2 Efficiency Data
    3. 2.3 Thermal Images
    4. 2.4 Bode Plots
  7. 3Waveforms
    1. 3.1 Switching
    2. 3.2 Output Voltage Ripple
    3. 3.3 Short-Circuit Protection
    4. 3.4 Load Transients
    5. 3.5 Start-up Sequence

2.3 Thermal Images

All images were captured with the unit under test (UUT) enclosed in an 18in × 11.5in × 7.5in Plexiglas box, 25ºC ambient, after a 30-minute warm up, and with forced airflow. The unit was tested with up to 12A load and at various input voltages. The high-side GaN FET became the hottest component on the board when operating at 150VIN at 10A loading with a recorded temperature of 96.6C°.

Table 2-4 Component Legend
MeasurementComponent

Sp1

Inductor (L1)

Sp2

High-Side GaN FET (Q1)

Sp3

Half-Bridge Gate Driver (U1)

Sp4

Low-Side GaN FET (Q2)

Sp5

Low-Side GaN FET (Q3)

Sp6

Fault Sense Resistor (R14)

Sp7

Op-amp (U3)

Sp8

PWM Controller (U2)

PMP23552 Thermal Image, 50VIN, 12A LoadFigure 2-3 Thermal Image, 50VIN, 12A Load
PMP23552 Thermal Image, 100VIN, 12A LoadFigure 2-4 Thermal Image, 100VIN, 12A Load
PMP23552 Thermal Image, 150VIN, 10A LoadFigure 2-5 Thermal Image, 150VIN, 10A Load