SLVK307 April   2026 SN54SC1G125-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 Single-Event Latch-up (SEL) Results
    2. 5.2 Single-Event Transients (SET) Results
  9. 6Event Rate Calculations
  10. 7Summary
  11. 8References

7 Summary

The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC1G125-SEP radiation-tolerant, single 2-input positive-AND gate. SEE performance was verified at minimum (1.1V) and maximum (5.5V) operating conditions. Heavy-ions with an LETEFF of 47MeV-cm2/mg were used to irradiate three production devices with a fluence of 1 × 107 ions/cm2. The results demonstrate that the SN54SC1G125-SEP is SEL-free up to LETEFF = 47MeV-cm2/mg as 125°C. SET performance for the minimum and maximum operating voltage saw no excursions ≥|2%|, as shown and discussed in this report.