SLVK268 June 2026 OPA4H838-SEP
The primary concern for the OPA4H838-SEP is the robustness against the destructive single-event effects (DSEE): single-event latch-up (SEL).
SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts) [1,2]. The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed, the device is reset, or until the device is destroyed by the high-current state.
The OPA4H838-SEP is tested for SEL at 125°C at the maximum recommended operating conditions of 5.5V. Output conditions are tested with no load. During testing of the three devices, the OPA4H838-SEP did not exhibit any SEL with heavy-ions with LETEFF = 45.6MeV×cm2 /mg at flux ≈105 ions×cm2/s , fluence of ≈107 ions/cm2, and a die temperature of 125°C. To see the SEL results of the OPA4H838-SEP, please refer to Section 6.1.
The OPA4H838-SEP is characterized for SET at flux of 105 ions×cm2/s , fluences of 107 ions/cm2 at room temperature. The OPA4H838-SEP is characterized as a follower with the output set to one half the supply voltage. Heavy-ions with LETEFF of 47.5MeV×cm2/mg is used to characterize the transient performance. To see the SET results of the OPA4H838-SEP, please refer to Section 7.