SLVK262A February   2026  – May 2026 TPS7H5030-SEP , TPS7H5031-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 Open-Loop Configuration
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References
  15.   B Revision History

8.1 Open-Loop Configuration

The primary focus of SETs were heavy-ion-induced transient upsets on output signal GATE (OUTH and OUTL tied together). SET testing was done at room temperature at 109Ag (TAMU) and 109Ag (KSEE) which produced a LETEFF of approximately 48MeV × cm2/mg. GATE was monitored using a NI PXIe-5110. During testing the scope was set to trigger if the signal exceeded |20%| from nominal using a pulse width trigger. During all SET testing, there was one type of transient recorded that was self-recoverable.

The SET results for eight devices are shown below in Table 8-4. The transient signature on GATE is shown and the number of transients across the runs and voltages are shown. Since only this transient signature occurred there is high confidence that the TPS7H503x-SEP is SEFI free and the recorded transient signature does not show any overshoot indicating that the TPS7H503x-SEP is safe for GaN operations. Note that for all testing VLDO was programmed to be 5V.

The upper-bound cross sections for all bias conditions are shown in Table 8-3.

Table 8-2 Summary of TPS7H503x-SEP Open-Loop SET Test Condition and Results
RUN # UNIT # Facility Device Type

VIN/PVIN (V)

fSW (Hz)

 ION LETEFF (MeV × cm2/mg) FLUX (ions/cm2/s) FLUENCE (ions/cm2) # GATE ≥|20%|

19

1

KSEE

TPS7H5030-SEP

12

 500k

109Ag

49.1

1.06 × 105

 1.00 × 107

0

20

2

 KSEE

TPS7H5030-SEP

12

500k

 109Ag

49.1

 1.05 × 105 1.00 × 107

1

21

3

 KSEE

TPS7H5030-SEP

12

500k

109Ag

49.1

 9.06 × 104 1.00 × 107

2

22

4

 KSEE

TPS7H5030-SEP

12

 500k

109Ag

49.1

 9.13× 104 1.00 × 107

9

23

5

TAMU

 TPS7H5030-SEP

12

500k

109Ag

47.7

1.50 × 105

 1.00 × 107

6

24

7

TAMU

 TPS7H5030-SEP

12

500k

 109Ag

47.7

1.07 × 105

 1.00 × 107

16

31

8

 KSEE TPS7H5031-SEP

12

 500k 109Ag 49.1 1.05 × 105 1.00 × 107

9

32

9

 KSEE TPS7H5031-SEP

12

 500k 109Ag 49.1 1.02 × 105 1.00 × 107

3
TPS7H5030-SEP Silicon Mode GATE Pulse-Width Transient (Run #20) Figure 8-1 TPS7H5030-SEP Silicon Mode GATE Pulse-Width Transient (Run #20)
TPS7H5030-SEP GATE Pulse-Width Deviation Histogram (All Runs) Figure 8-2 TPS7H5030-SEP GATE Pulse-Width Deviation Histogram (All Runs)
TPS7H5030-SEP GATE Transient Duration Histogram (All Runs) Figure 8-3 TPS7H5030-SEP GATE Transient Duration Histogram (All Runs)
Table 8-3 TPS7H503x-SEP SET Cross Sections

LETEFF (MeV × cm2/mg)

 Device Type

fSW (Hz)

 VIN

(V)

Fluence (ions/cm2)

# Transients

Upper-Bound Cross Section (cm2)

48

TPS7H5030-SEP

500k

12

 6 × 107

34

7.92 × 10-7

48

TPS7H5031-SEP

500k

12

 2 × 107

12

1.05 × 10-6