SLVK262A February   2026  – May 2026 TPS7H5030-SEP , TPS7H5031-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 Open-Loop Configuration
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References
  15.   B Revision History

1 Introduction

The TPS7H503x-SEP is a radiation-tolerant, current mode, single-ended PWM controller with an integrated gate driver that is targeted to be used in silicon based power semiconductor based converter designs. The TPS7H503x-SEP integrates several key functions such as:

  • Soft-start, enable, and adjustable slope compensation
  • 0.6V ±1% voltage reference tolerance
  • Internal oscillator through the RT pin or external frequency control through the SYNC pin
  • Switching frequencies up to 500kHz
  • Input voltage range from 8V to 14V

The TPS7H5030 has a maximum duty cycle of 100%. The TPS7H5031 has a maximum duty cycle of 50%. The controller supports numerous power converter topologies, including flyback, forward, and boost.

The device is offered in a 24-pin plastic package. General device information and test conditions are listed in the overview information table. For more detailed technical specifications, user's guides, and application notes, please go to the TPS7H5030-SEP product page.

Table 1-1 Overview Information
DESCRIPTION(1)DEVICE INFORMATION
TI Part NumberTPS7H503x-SEP
Orderable Part Number

TPS7H5030MPWPTSEP TPS7H5031MPWPTSEP

Device FunctionPWM Controller with Integrated Gate Driver
TechnologyLBC7 (Linear BiCMOS 7)
Exposure FacilityFacility for Rare Istotope Beams, K500 Cyclotron (KSEE), Michigan State University (19.5MeV/nucleon)

and Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15MeV/nucleon)

Heavy Ion Fluence per Run1.00 × 107 ions/cm2
Irradiation Temperature25°C (for SEB/SEGR testing), 25°C (for SET testing), and 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.