SLVK245 December   2025 INA1H94-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Irradiation Facilities and Telemetry
  7. 4Test Device and Test Board Information
    1. 4.1 Qualification Circuits and Boards
    2. 4.2 Characterization Devices and Test Board Schematics
  8. 5Results
    1. 5.1 SEL Qualification Results
    2. 5.2 SET Characterization Results: TAMU K500 Cyclotron
    3. 5.3 Analysis
  9. 6Summary
  10.   A Texas A&M University Results Appendix
  11.   B References

Qualification Circuits and Boards

The INA1H94-SEP was biased in a variety of different conditions for SEE testing, at both the recommended minimum and recommended maximum supply voltages. Midsupply or GND was used for both REFA and REFB. Current was monitored over time for both supplies V+, V- and the instrumentation amplifier inputs -IN and +IN.

 INA1H94-SEP SEE Qualification
                    Bias Diagram Figure 4-2 INA1H94-SEP SEE Qualification Bias Diagram
Input and supply voltages were provided by SMU PXI cards, connected with banana cables. The board used for testing incorporated jumpers to allow testing with high VCM and 0V VDIFF; low VCM and high VDIFF; and high VCM and constant VDIFF. For all testing, the device outputs were monitored using oscilloscope PXI cards, connected with BNC cables. A 100Ω of series isolation resistance was used to drive the cable capacitance. A 2kΩ output load to midsupply was present for all DUTs.

An example of the INA1H94-SEP device mounted through a socket on a characterization board is shown in Figure 4-3. During SEL qualification, the device was heated using forced hot air, maintaining an IC temperature at 125°C. During SEL testing, the devices were soldered into a coupon board, allowing direct airflow access to the heater. For SET testing, devices were mounted in a socket for the easy exchange of units.

 Characterization Board Figure 4-3 Characterization Board