SLVK199A August   2025  – August 2026 TPS7H3024-SP , TPS7H3034-SP , TPS7H3134-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References
  15.   B Revision History

7.1 Single-Event Latch-Up (SEL) Results

During SEL characterization, the device was heated using a closed-loop PID controlled heat gun [MISTRAL 6 System (120V, 2400W)] to 125°C. The temperature of the die was constantly monitored during testing at TAMU through an IR camera integrated into the control loop to create closed-loop temperature control. The DUT temperature was monitored prior to being irradiated with a FLIR IR-camera to ensure the junction temperature at KSEE. The species used for SEL testing was 165Ho and 169Tm for TAMU and KSEE, respectively. An incident angle was used which achieved an LETEFF of 75MeV·cm2/mg.

12 production units of the TPS7H3XX4-SP were tested for SEL at a flux of ≈1 × 105 ions/cm2·s, a fluence of ≈ 107 ions/cm2, maximum recommended VIN voltage (14V), maximum recommended VPULL-UPX voltage (7V). For SEL testing the device was configured in the following 4 different operating modes. Table 7-1 showcases the operating modes used during testing.

  1. MODE 0, WD SW
  2. MODE 0, WD Off
  3. MODE 1, WD SW
  4. MODE 1, WD Off
Table 7-1 Operating Modes Used for SEL testing on TPS7H3XX4-SP
RUN #UNIT #DEVICEMODEWD
11TPS7H3024-SP0SW
22TPS7H3024-SP0OFF
33TPS7H3024-SP1SW
44TPS7H3024-SP1OFF
55TPS7H3024-SP0OFF
66TPS7H3024-SP1OFF
77TPS7H3124-SP0OFF
88TPS7H3124-SP0SW
99TPS7H3134-SP1OFF
1010TPS7H3134-SP1SW
1111TPS7H3034-SP0OFF
1212TPS7H3034-SP0SW

For more configuration information please refer to Table 6-1.

Not a single functional interrupt was observed, neither a high current event on any of the power supplies of the TPS7H3XX4-SP. This indicates the TPS7H3XX4-SP is SEL-free. The results for twelve runs across all devices are shown in Table 8-5. A typical VIN current versus time plot during a SEL run is shown in Figure 7-1 and Figure 7-2.

Table 7-2 Summary of TPS7H3XX4-SP SEL Test Condition and Results
RUN #UNIT #FACILITYIONLETEFF (MeV·cm2/mg)FLUX (ions/cm2/s)FLUENCE (ions/cm2)SEL (NUMBER OF EVENTS)
11

TAMU

165Ho

75

5.48 × 104

1.00 × 107

0

22

TAMU

165Ho

75

5.31 × 104

1.00 × 107

0

33

TAMU

165Ho

75

5.85 × 104

1.00 × 107

0

4

4

TAMU

165Ho

75

5.83 × 1041.00 × 107

0

5

5

KSEE

169Tm

75.1

7.72 × 1041.00 × 107

0

6

6

KSEE

169Tm

75.1

1.02 × 1051.00 × 107

0

7

7

KSEE169Tm75.1

1.16 × 105

1.00 × 107

0

8

8

KSEE169Tm75.11.20 × 1051.00 × 107

0

9

9

KSEE169Tm75.11.23 × 1051.00 × 107

0

10

10

KSEE169Tm75.11.12 × 1051.00 × 107

0

11

11

KSEE169Tm75.11.07 × 1051.00 × 107

0

12

12

KSEE169Tm75.11.09 × 1051.00 × 107

0

Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report and combining (or summing) the fluence of the twelve runs at 125°C (12 × 107) ions/cm2, the upper-bound cross-section (using a 95% confidence level) is calculated as:

σSEL ≤ 3.07 × 10-8 cm2/device for LETEFF = 75MeV·cm2/mg and T = 125°C.

Current versus Time for IIN: Run #2 (Mode 0, WD Off) of the TPS7H3XX4-SP at T = 125°CFigure 7-1 Current versus Time for IIN: Run #2 (Mode 0, WD Off) of the TPS7H3XX4-SP at T = 125°C
Current versus Time for IIn: Run #3 (Mode 1, WD SW) of the TPS7H3XX4-SP at T = 125°CFigure 7-2 Current versus Time for IIn: Run #3 (Mode 1, WD SW) of the TPS7H3XX4-SP at T = 125°C