SLVK075A May   2022  – April 2025 DP83561-SP

 

  1.   1
  2.   Single-Event Effects Test Report of the DP83561-SP Space grade (QMLV-RHA) 10/100/1000 Ethernet PHY
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects
  6. 3Test Device and Evaluation Board Information
    1.     7
  7. 4Irradiation Facility and Setup
  8. 5Depth, Range, and LETEFF Calculation
  9. 6Test Setup and Procedures
  10. 7Single Event Effects (SEE)
    1. 7.1 Single-Event-Latchup (SEL)
    2. 7.2 Single Event Transients (SET)
  11. 8Summary
  12.   A References
  13.   B Revision History

Single-Event-Latchup (SEL)

SEL characterizations was performed with ambient temperature of 125°C. Ambient temperature of 125°C was achieved with a convection heat gun aimed at the die. The ambient temperature was monitored during the testing using a K-Type thermocouple attached to the heat slug of the package with solder paste. Thermocouple and die correlation was verified by using a thermal IR camera prior to reaching the heavy-ions facility (TAMU). The device was exposed to a Gold (Au) heavy-ion beam incident on the die surface at different angles for a LETEFF from 85MeV·cm2/mg up to 121MeV·cm2/mg across multiple runs. Flux of approximately 105 ions/cm2 ·s and fluence of 1×107 ions/cm2 were used. Run duration to achieve this fluence was approximately two minutes. As mentioned in Section 6, all supplies were set to the maximum allowable value.

For SEL characterization, the PHY was first initialized for communication at the proper speed, and to configure the LEDs for link indication. Link status was monitored throughout the beam run. PHY register values were recorded prior to the run. During the run, link was lost, as expected, and was recovered post run. Link recovery did not require a power cycle, but sometimes required a soft reset through registers, a hard reset through registers, or a hard reset through grounding the reset pin through hardware. Under this condition (no power cycle required), no incidences of SEL were detected on any ion runs, indicating that the DP83561-SP is SEL-immune up to LETEFF = 121 MeV × cm2/ mg at 125°C. A single high current event was observed during one of the runs while testing 100Mbps mode, though RX_CLK was also observed to produce a clock frequency of 125MHz. The high current value observed matched the expected current for 1G communication, and the RX_CLK frequency of 125MHz confirm that the device had been momentarily reset for 1G mode, before recovering to a 100Mbps mode of operation. The device could be re-programmed back to the 100Mbps mode and the device currents were normal Indicating the current fluctuation is caused by register change.

Table 7-2 summarizes the SEL test conditions, including LETEFF, MAC interface mode, and speed, as well as the overall results. To reiterate, no incidences of SEL were detected on any ion runs, indicating that the DP83561-SP is SEL-immune up to LETEFF = 121MeV·cm2/mg at 125°C. The SEL cross section was calculated based on zero events observed using a 95% (2σ) confidence interval. Figure 7-1 shows a typical current plot.

σSEL ≤ 7.38 x 10-8 cm2/device LETEFF = 121 MeV × cm2/ mg, at 125°C, 95% confidence.

Table 7-1 Summary of DP83561-SP SEL Results Across Speeds and MeV Levels
TEMP (°C) ION ANGLE OF INCIDENCE (°) LETEFF (MeV·cm2/mg) FLUX
(IONS/CM2·s)
FLUENCE (IONS/CM2) MAC - MDI CONFIGURATION CURRENT (mA) SEL EVENTS
VDD1P1 (1.21) VDD1P8 (1.89) VDDA2P5 (2.62) VDDIO (3.45)
125 Au 43 121 1.00×105 1.00×107 RGMII - 1G 182 56.08 90.05 56 0
125 Au 29 100 1.00×105 1.00×107 RGMII - 1G 181.2 56.07 90.09 58 0
125 Au 0 85 1.00×105 1.00×107 RGMII - 1G 180.7 56 90.3 58 0
125 Au 0 85 1.00×105 1.00×107 RGMII - 1G 180.9 55.9 90.6 58 0
125 Au 0 85 1.00×105 1.00×107 RGMII - 100M 85.5 22.2 47.2 33 0
MII is characterized up-to 85 LET due to limited time at Lab. We expect it to meet similar levels as 1G
DP83561-SP Current Versus Time for VDD1P1
                    SEL Run #4 at T = 125°C and 121 MeV·cm2/mg Figure 7-1 Current Versus Time for VDD1P1 SEL Run #4 at T = 125°C and 121 MeV·cm2/mg
DP83561-SP Current Versus Time for VDD2P5
                    SEL Run #4 at T = 125°C and 121 MeV·cm2/mg Figure 7-2 Current Versus Time for VDD2P5 SEL Run #4 at T = 125°C and 121 MeV·cm2/mg
DP83561-SP Current Versus Time for
                    VDDA1P8 SEL Run #4 at T = 125°C and 121 MeV·cm2/mg Figure 7-3 Current Versus Time for VDDA1P8 SEL Run #4 at T = 125°C and 121 MeV·cm2/mg
DP83561-SP Current Versus Time for VDDIO
                    SEL Run #4 at T = 125°C and 121 MeV·cm2/mg Figure 7-4 Current Versus Time for VDDIO SEL Run #4 at T = 125°C and 121 MeV·cm2/mg