SDAA313A March 2026 – May 2026 INA1650-Q1
To simplify power calculations, power calculation can be simplified by simulating power instead of performing complex calculations. The method is as follows:
Using the measured values Vdelta (The voltage applied to the INA1650-Q1) and I_Load, multiply them using Tina's post-processing formula to obtain the power. By clicking on the power curve and going to Process > Averages, the RMS power can be calculated, which is 258.02mWrms..
To estimate the temperature rise, based on the INA1650-Q1 thermal parameter of θJA of 97°C/W, the resulting temperature rise is: 258.02mW × 97°C/W = 25.03°C. Adding this temperature rise to the 85 °C ambient temperature, we get a die temperature of 110.03°C. However, consider the power consumption of the device itself. With an Iq of 10mA and a supply voltage of 9V, the device consumes an additional 90mW (10mA × 9V) of power. This adds 8.73°C (90mW * 97 °C/W) to the die temperature, resulting in a total die temperature of 118.76 °C.
Figure 4-5 Power
Simulation ResultsBased on the INA1650-Q1 data sheet, at a die temperature of 125 °C, the maximum current the device can provide is approximately 53mA. By using parallel amps, a perfect doubling of current will not be acheived, but the user still obtains more current than a single amp alone. For the design's required maximum output power of 100mW, a peak drive current of 80mA is needed, which is achievable with the INA1650-Q1 via its dual-channel parallel configuration.
Figure 4-6 INA1650-Q1
Positive Output Voltage vs Output Current