SBOK086 December   2024 TRF0208-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Overview
  5. 2 Single-Event Effects
  6. 3 Test Device and Evaluation Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Set-Up and Procedures
  10. 7 Single-Event Latch-up (SEL) Results
  11. 8 Single-Event Transients (SET) Results
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B Confidence Interval Calculations
  16.   C References

1 Overview

The TRF0208-SEP is a very high performance, radiation hardened RF amplifier optimized for radio frequency (RF) applications. This device is an excellent choice for ac-coupled applications that require a single-ended to differential conversion when driving an analog-to-digital converter (ADC) such as the high performance ADC12DJ5200-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-qualified, WQFN-FCRLF package. The device operates on a 3.3V single-rail supply. A power-down feature is also available for power savings.

For more detailed technical specifications, user-guides, and application notes visit: http://www.ti.com/product/TRF0208-SEP.

Table 1-1 Overview Information
DescriptionDevice Information
TI Part NumberTRF0208-SEP
Device FunctionFully Differential Amplifier
TechnologyBiCMOS
Exposure Facility

Radiation Effects Facility, Cyclotron Institute,
Texas A&M University

Heavy-Ion Fluence per Run107 (for SEL and SET) ions/cm2
Irradiation Temperature25°C and 125°C (for SEL testing)