SBOK045 March   2024 INA901-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects (SEE)
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Test Setup and Procedures
  9. 6Destructive Single-Event Effects (DSEE)
    1. 6.1 Single-Event Latch-up (SEL) Results
  10. 7Single-Event Transients (SET)
  11. 8Event Rate Calculations
  12. 9Summary
  13.   A References

2 Single-Event Effects (SEE)

The primary SEE events of interest in the INA901-SP for this report are single-event latch-up (SEL). From a risk and impact point-of-view, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. In mixed technologies such as the LBC-SOI process used for the INA901-SP, the CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed or until the device is destroyed by the high-current state. The INA901-SP exhibited no SEL with heavy ions up to an LETEFF of 93.98MeV-cm2 / mg at a fluence of 107 ions / cm2 and a chip temperature of 125°C.