ZHCSPH5C June   2022  – March 2023 UCC28C50 , UCC28C51 , UCC28C52 , UCC28C53 , UCC28C54 , UCC28C55 , UCC28C56H , UCC28C56L , UCC28C57H , UCC28C57L , UCC28C58 , UCC28C59 , UCC38C50 , UCC38C51 , UCC38C52 , UCC38C53 , UCC38C54 , UCC38C55

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Description
        1. 8.3.1.1 COMP
        2. 8.3.1.2 FB
        3. 8.3.1.3 CS
        4. 8.3.1.4 RT/CT
        5. 8.3.1.5 GND
        6. 8.3.1.6 OUT
        7. 8.3.1.7 VDD
        8. 8.3.1.8 VREF
      2. 8.3.2  Undervoltage Lockout
      3. 8.3.3  ±1% Internal Reference Voltage
      4. 8.3.4  Current Sense and Overcurrent Limit
      5. 8.3.5  Reduced-Discharge Current Variation
      6. 8.3.6  Oscillator Synchronization
      7. 8.3.7  Soft-Start Timing
      8. 8.3.8  Enable and Disable
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Voltage Mode
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Input Bulk Capacitor and Minimum Bulk Voltage
        2. 9.2.2.2  Transformer Turns Ratio and Maximum Duty Cycle
        3. 9.2.2.3  Transformer Inductance and Peak Currents
        4. 9.2.2.4  Output Capacitor
        5. 9.2.2.5  Current Sensing Network
        6. 9.2.2.6  Gate Drive Resistor
        7. 9.2.2.7  VREF Capacitor
        8. 9.2.2.8  RT/CT
        9. 9.2.2.9  Start-Up Circuit
        10. 9.2.2.10 Voltage Feedback Compensation
          1. 9.2.2.10.1 Power Stage Poles and Zeroes
          2. 9.2.2.10.2 Slope Compensation
          3. 9.2.2.10.3 Open-Loop Gain
          4. 9.2.2.10.4 Compensation Loop
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 Precautions
        2. 9.4.1.2 Feedback Traces
        3. 9.4.1.3 Bypass Capacitors
        4. 9.4.1.4 Compensation Components
        5. 9.4.1.5 Traces and Ground Planes
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 第三方产品免责声明
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 接收文档更新通知
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  11. 11Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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8.3 Feature Description

The BiCMOS design allows operation at high frequencies that were not feasible in the predecessor bipolar devices. First, the output stage has been redesigned to drive the external power switch in approximately half the time of the earlier devices. Second, the internal oscillator is more robust, with less variation as frequency increases. This faster oscillator makes this device suitable for high speed applications and the trimmed discharge current enables precise programming of the maximum duty cycle and dead-time limit. In addition, the current sense to output delay is kept the same 45 ns (typical) as UCCx8C4x. Such a delay time in the current sense results in superior overload protection at the power switch. The reduced start-up current of this device minimizes steady state power dissipation in the startup resistor, and the low operating current maximizes efficiency while running, increasing the total circuit efficiency, whether operating off-line, DC input, or battery operated circuits. These features combine to provide a device capable of reliable, high-frequency operation.

Table 8-1 Improved Key Parameters
PARAMETER UCCx8C4x UCCx8C5x
Supply current at 52 kHz 2.3 mA 1.3 mA
Start-up current, maximum 100 µA 75 µA
VVDD absolute maximum 20 V 30 V
Reference voltage accuracy ± 1% ± 2%
UVLO and Dmax for Si FETs 6 options 6 options
UVLO and Dmax for SiC FETs

No options

6 options
Smallest package option VSSOP (8) VSSOP (8)