ZHCSQ75C June   2022  – March 2023 UCC28C50-Q1 , UCC28C51-Q1 , UCC28C52-Q1 , UCC28C53-Q1 , UCC28C54-Q1 , UCC28C55-Q1 , UCC28C56H-Q1 , UCC28C56L-Q1 , UCC28C57H-Q1 , UCC28C57L-Q1 , UCC28C58-Q1 , UCC28C59-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Description
        1. 8.3.1.1 COMP
        2. 8.3.1.2 FB
        3. 8.3.1.3 CS
        4. 8.3.1.4 RT/CT
        5. 8.3.1.5 GND
        6. 8.3.1.6 OUT
        7. 8.3.1.7 VDD
        8. 8.3.1.8 VREF
      2. 8.3.2  Undervoltage Lockout
      3. 8.3.3  ±1% Internal Reference Voltage
      4. 8.3.4  Current Sense and Overcurrent Limit
      5. 8.3.5  Reduced-Discharge Current Variation
      6. 8.3.6  Oscillator Synchronization
      7. 8.3.7  Soft Start
      8. 8.3.8  Enable and Disable
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Voltage Mode
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Primary-to-Secondary Turns Ratio of the Flyback Transformer (NPS)
        2. 9.2.2.2  Primary Magnetizing Inductance of the Flyback Transformer (LM)
        3. 9.2.2.3  Number of Turns of the Flyback Transformer Windings
        4. 9.2.2.4  Current Sense Resistors (R24, R25) and Current Limiting
        5. 9.2.2.5  Primary Clamp Circuit (D7, D1, D3, R2, R28) to Limit Voltage Stress
        6. 9.2.2.6  Primary-Side Current Stress and Input Capacitor Selection
        7. 9.2.2.7  Secondary-Side Current Stress and Output Capacitor Selection
        8. 9.2.2.8  VDD Capacitors (C12, C18)
        9. 9.2.2.9  Gate Drive Network (R14, R16, Q6)
        10. 9.2.2.10 VREF Capacitor (C18)
        11. 9.2.2.11 RT/CT Components (R12, C15)
        12. 9.2.2.12 HV Start-Up Circuitry for VDD (Q1, Q2, D2, D4, D6, D8, R5)
        13. 9.2.2.13 Desensitization to CS-pin Noise by RC Filtering, Leading-Edge Blanking, and Slope Compensation
        14. 9.2.2.14 Voltage Feedback Compensation
          1. 9.2.2.14.1 Power Stage Gain, Poles, and Zeroes
          2. 9.2.2.14.2 Compensation Components
          3. 9.2.2.14.3 Bode Plots and Stability Margins
          4. 9.2.2.14.4 Stability Measurements
      3. 9.2.3 Application Curves
    3. 9.3 PCB Layout Recommendations
      1. 9.3.1 PCB Layout Routing Examples
    4. 9.4 Power Supply Recommendations
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Related Links
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

OUT

The high-current output stage of the UCC28C5x-Q1 to drive the external power switch has been kept the same as the earlier devices UCC28C4x-Q1. To drive a power MOSFET directly, the totem-pole OUT driver sinks or source up to 1 A peak of current. The OUT of the UCC28C50-Q1, UCC28C52-Q1, UCC28C53-Q1, UCC28C56H/L-Q1 and UCC28C58-Q1 devices switch at the same frequency as the oscillator and can operate near 100% duty cycle. In the UCC28C51-Q1, UCC28C54-Q1, and UCC28C55-Q1, UCC28C57H/L-Q1 and UCC28C59-Q1, the switching frequency of OUT is one-half that of the oscillator due to an internal T flip-flop. This limits the maximum duty cycle in the UCC28C51-Q1, UCC28C54-Q1, UCC28C55-Q1, UCC28C57H/L-Q1 and UCC28C59-Q1 to < 50%.

The UCC28C5x-Q1 family houses unique totem pole drivers exhibiting a 10-Ω impedance to the upper rail and a 5.5-Ω impedance to ground, typically. This reduced impedance on the low-side switch helps minimize turn-off losses at the power MOSFET, whereas the higher turn-on impedance of the high-side is intended to better match the reverse recovery characteristics of many high-speed output rectifiers. Transition times, rising and falling edges, are typically 25 nanoseconds and 20 nanoseconds, respectively, for a 10% to 90% change in voltage.

A low impedance MOS structure in parallel with a bipolar transistor, or BiCMOS construction, comprises the totem-pole output structure. This more efficient utilization of silicon delivers the high peak current required along with sharp transitions and full rail-to-rail voltage swings. Furthermore, the output stage is self-biasing, active low during under-voltage lockout type. With no VDD supply voltage present, the output actively pulls low if an attempt is made to pull the output high. This condition frequently occurs at initial power-up with a power MOSFET as the driver load.