ZHCSVQ7A December   2023  – April 2024 UCC23525

ADVANCE INFORMATION  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Function
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety Limiting Values
    8. 5.8  Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Thermal Derating Curves
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay, Rise Time and Fall Time
    2. 6.2 IOH and IOL Testing
    3. 6.3 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supply
      2. 7.3.2 Input Stage
      3. 7.3.3 Output Stage
      4. 7.3.4 Protection Features
        1. 7.3.4.1 Undervoltage Lockout (UVLO)
        2. 7.3.4.2 Active Pulldown
        3. 7.3.4.3 Short-Circuit Clamping
        4. 7.3.4.4 ESD Structure
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Selecting the Input Resistor
        2. 8.2.2.2 Gate Driver Output Resistor
        3. 8.2.2.3 Estimate Gate-Driver Power Loss
        4. 8.2.2.4 Estimating Junction Temperature
        5. 8.2.2.5 Selecting VDD Capacitor
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 PCB Material
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Package Option Addendum
    2. 13.2 Tape and Reel Information
    3. 13.3 Mechanical Data

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DWY|6
散热焊盘机械数据 (封装 | 引脚)

7.3.3 Output Stage

The device has ±5-A peak drive strength and is suitable for high power applications. The high drive strength can drive a SiC MOSFET module, IGBT module or paralleled discrete devices directly without extra buffer stage. The device can also be used to drive higher power modules or parallel modules with extra buffer stage. Regardless of the values of VDD, the peak sink and source current can be kept at 5 A. The driver features an important safety function wherein, when the input pins are in floating condition, the OUT is held in low state. The output stage of the driver stage is depicted in Figure 7-4. The driver has rail-to-rail output by implementing an NMOS pull-up with intrinsic bootstrap gate drive. Under DC conditions, a PMOS is used to keep OUT tied to VDD as shown in the figure. The low pullup impedance of the NMOS results in strong drive strength during the turn-on transient, which shortens the charging time of the input capacitance of the power semiconductor and reduces the turn on switching loss.

GUID-20231214-SS0I-HVTL-G4ZF-PFZSN8XCFS7D-low.svg Figure 7-4 Output Stage