The TS3DV642-Q1 is based on proprietary TI technology which uses FET switches driven by a high-voltage generated from an integrated charge-pump to achieve a low on-state resistance. TS3DV642-Q1 has 6 differential channel or 12 single ended channel bidirectional switches with a high bandwidth. TS3DV642-Q1 uses an extremely low power technology and uses only 45 µA I_CC in active mode. The device has integrated ESD that can support up to 3-kV Human-Body Model (HBM) and 1-kV Charge Device Model (CDM). TS3DV642-Q1 is offered in a 42-pin QFN package (9 mm x 3.5 mm) with 0.5 mm pitch. The device can support analog I/O signal in 0 to 5.5 V range. TS3DV642-Q1 also has a special feature that prevents the device from back-powering when the V_CC supply is not available and an analog signal is applied on the I/O pin. In this situation this special feature prevents leakage current in the device. The TS3DV642-Q1 is not designed for passing signals with negative swings.