ZHCS835G March   2012  – October 2023 TPS7A7200

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configurations
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 User-Configurable Output Voltage
      2. 6.3.2 Traditional Adjustable Configuration
      3. 6.3.3 Undervoltage Lockout (UVLO)
      4. 6.3.4 Soft-Start
      5. 6.3.5 Current Limit
      6. 6.3.6 Enable
      7. 6.3.7 Power-Good
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 ANY-OUT Programmable Output Voltage
        2. 7.2.2.2 Traditional Adjustable Output Voltage
        3. 7.2.2.3 Input Capacitor Requirements
        4. 7.2.2.4 Output Capacitor Requirements
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Thermal Considerations
        2. 7.4.1.2 Power Dissipation
        3. 7.4.1.3 Estimating Junction Temperature
      2. 7.4.2 Layout Example
  9. 8 Device And Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 接收文档更新通知
    3. 8.3 支持资源
    4. 8.4 Trademarks
    5. 8.5 静电放电警告
    6. 8.6 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, And Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5.4 Thermal Information

THERMAL METRIC(1)(2)TPS7A7200(3)UNIT
RGW (VQFN)RGT (QFN)
20 PINS16 PINS
RθJAJunction-to-ambient thermal resistance35.744.6°C/W
RθJC(top)Junction-to-case (top) thermal resistance33.654.3°C/W
RθJBJunction-to-board thermal resistance15.217.2°C/W
ψJTJunction-to-top characterization parameter0.41.1°C/W
ψJBJunction-to-board characterization parameter15.417.2°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistance3.83.8°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.
(2) For thermal estimates of this device based on printed-circuit-board (PCB) copper area, see the TI PCB thermal calculator.
(3) Thermal data for the RGW package is derived by thermal simulations based on JEDEC-standard methodology as specified in the JESD51 series. The following assumptions are used in the simulations:
  1. i. RGW: The exposed pad is connected to the PCB ground layer through a 4 × 4 thermal via array.
    ii. RGT: The exposed pad is connected to the PCB ground layer through a 2 × 2 thermal via array.
  2. i. RGW: Both the top and bottom copper layers have a dedicated pattern for 4% copper coverage.
    ii .RGT: Both the top and bottom copper layers have a dedicated pattern for 5% copper coverage.
  3. These data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3-inch × 3-inch copper area. To understand the effects of the copper area on thermal performance, see the Power Dissipation and Estimating Junction Temperature sections.