SLVSHR0 May   2025 TPS2HCS08-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1. 5.1 A Version Package
    2. 5.2 Pinout - Version A
    3. 5.3 Version B Package
    4. 5.4 Pinout - Version B
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Device Functional Modes
      1. 8.3.1 State Diagram
      2. 8.3.2 Output Control
      3. 8.3.3 SPI Mode Operation
      4. 8.3.4 Fault Reporting
      5. 8.3.5 SLEEP
      6. 8.3.6 CONFIG/ACTIVE
      7. 8.3.7 LIMP_HOME State (Version A only)
      8. 8.3.8 Battery Supply Input (VBB) Under-voltage
      9. 8.3.9 LOW POWER MODE (LPM) States
        1. 8.3.9.1 MANUAL_LPM State
        2. 8.3.9.2 AUTO_LPM State
    4. 8.4 Feature Description
      1. 8.4.1 Protection Mechanisms
        1. 8.4.1.1 Overcurrent Protection
          1. 8.4.1.1.1 Inrush Period - Overcurrent Protection
          2. 8.4.1.1.2 Overcurrent Protection - Steady State Operation
          3. 8.4.1.1.3 Programmable Fuse Protection
          4. 8.4.1.1.4 Immediate Shutdown Overcurrent Protection (IOCP)
          5. 8.4.1.1.5 Auto Retry and Latch-off Behavior
        2. 8.4.1.2 Thermal Shutdown
        3. 8.4.1.3 Reverse Battery
      2. 8.4.2 Diagnostic Mechanisms
        1. 8.4.2.1 Integrated ADC
        2. 8.4.2.2 Digital Current Sense Output
        3. 8.4.2.3 Output Voltage Measurement
        4. 8.4.2.4 MOSFET Temperature Measurement
        5. 8.4.2.5 Drain-to-Source Voltage (VDS) Measurement
        6. 8.4.2.6 VBB Voltage Measurement
        7. 8.4.2.7 VOUT Short-to-Battery and Open-Load
          1. 8.4.2.7.1 Measurement With Channel Output (FET) Enabled
          2. 8.4.2.7.2 Detection With Channel Output Disabled
    5. 8.5 Parallel Mode Operation
    6. 8.6 TPS2HCS08 Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Thermal Considerations
        2. 9.2.2.2 Configuring the Capacitive Charging Mode
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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6.5 Electrical Characteristics

VBB = 6V to 18V, VDD = 3.0V to 5.5V, TJ = –40°C to 150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE AND CURRENT
VClamp VDS clamp voltage  IOUT = 10mA  VBB > 28V TJ = 25°C to 150°C 35 40 45 V
IOUT = 10mA  12V < VBB < 28V TJ = –40°C to 150°C 30 34 38 V
IOUT = 10mA VBB = 3V TJ = –40°C to 150°C 27.5 36.5 V
VBB_UVLOR VBB undervoltage lockout rising Measured with respect to the GND pin of the device.
 3.0 3.5 4.0 V
VBB_UVLOF VBB undervoltage lockout falling 2.6 2.8 3.0 V
VBB_UV_WRN_R VBB voltage UV_WRN rising threshold Measured with respect to the GND pin of the device. 
 4.9 V
VBB_UV_WRN_F VBB voltage UV_WRN falling threshold threshold 4.5 V
VVDD_UVLOR VVDD undervoltage lockout rising Measured with respect to the GND pin of the device
 1.94 2.2 V
VVDD_UVLOF VVDD  undervoltage lockout falling 1.86 2.07 V
ISLEEP,VBB Sleep current (total device leakage including all MOSFET channels) VBB ≤ 18V, device in SLEEP mode, VOUT = 0V TJ = 25°C
 		 0.5 µA
TJ = 85°C
 		 2.2 µA
ISLEEP,VDD Sleep current from VDD pin VVDD ≤ 5.5V, device in SLEEP mode, VOUT = 0V TJ = 25°C 0.3 µA
TJ = 85°C 0.5 µA
IOUT(OFF) Output leakage current (per channel) VOUT = 0V, Channel disabled,
ACTIVE/CONFIG state		 TJ = –40 to 125°C 1 14 µA
IQ,VDD VDD quiescent current ACTIVE state, SCLK off VDD = 5.5V 1.4 1.6 mA
ACTIVE state, SCLK ON  2.2 mA
IQ,VBB  VBB quiescent current All channels enabled, IOUTx = 0A, SCLK off, Diagnostics disabled VDD = 5.5V 3.8 4.3 mA
VDD = 3.0V 4.25 5.2 mA
All channels enabled, IOUTx = 0A, SCLK off, Diagnostics enabled (ISNS, ADC) VDD = 5.5V 3.9 4.5 mA
VDD = 0V 4.4 5.5 mA
IL,CONT Continuous load current, per channel All channels enabled, TAMB = 85°C 8 A
One channel enabled, TAMB = 85°C 13 A
RON CHARACTERISTICS
RON On-resistance 6V ≤ VBB ≤ 28V, IOUTx = 1A,
OL_ON_EN_CH1 = 0		 TJ = 25°C 8.9 mΩ
TJ = 150°C 17.8 mΩ
RON_OL On-resistance, OL_ON mode 6V ≤ VBB ≤ 28V, IOUTx = 0.3A, OL_ON_EN_CHx = 1 TJ = 25°C 27 mΩ
TJ = 150°C 54 mΩ
RON(REV) On-resistance during reverse polarity –18V ≤ VBB ≤ –7V,
Version A & B 		 TJ = 25°C 9.5 mΩ
TJ = 150°C 20 mΩ
ΔRON Percentage difference in on-resistance between channels (RON,CHx - RON,CHy ) VBB ≥ 6V, TJ = 25°C 0.5 7 %
CURRENT SENSE CHARACTERISTICS
KSNS1 Current sense ratio
IOUTx / ISNS		 IOUT = 1.0A, OL_ON_EN_CHx = 0 5000
KSNS2 Current sense ratio
IOUTx / ISNS		 IOUT = 50mA, OL_ON_EN_CHx = 1 1400
ISNS_SAT Saturated sense current VBB > 6V, RSNS = 374Ω 
OL_ON_EN_CHx =0		 IOUT = > 30A 6 mA
KSNS1  KSNS1 ratio IOUT / ISNS1 across IOUT RSNS = 374Ω, 
OL_ON_EN_CHx = 0		 IOUT = 20A 5000
-3 3 %
RSNS = 698Ω
OL_ON_EN_CHx = 0		 IOUT = 10A 5000
-4 4 %
IOUT = 5A 5000
-5 5 %
IOUT = 2.5A 5000
-5 5 %
IOUT = 1A 5000
-5 5 %
IOUT = 500mA 5000
-7 7 %
IOUT = 250mA 5000
-10 10 %
IOUT = 100mA 5000
-18 18 %
KSNS2  KSNS2 ratio IOUT / ISNS2 across IOUT RSNS = 698Ω 
OL_ON_EN_CHx = 1		 IOUT = 250mA  1400
-10 10 %
IOUT = 100mA  1400
-10 10 %
IOUT = 50mA 1400
-12 12 %
IOUT = 25mA 1400
-20 20 %
IOUT = 10mA  1400
40 40 %
IENTRY_OL_ON IOUT current to enter OL_ON mode (OL_ON_EN_CHx = 1) 0.5 A
IEXIT_OL_ON IOUT current to exit OL_ON mode (OL_ON_EN_CHx = 1) 1.7 A
ADC CHARACTERISTICS
VADCREFHI ADC reference voltage 2.76 2.81 2.9 V
Isample Current sense sampling time Including mux timing and ADC conversion time 50 µs
IADC ADC current consumption 0.5  mA
SNS CHARACTERISTICS
ISNSADC,ACC ISNS ADC accuracy OL_ON_EN_CHx =1,
ISNS_SCALE_CHx = 1		 SNS pin voltage = 2.7V -3 3 %
SNS pin voltage = 1.4V -3.25 3.25 %
SNS pin voltage = 0.7V -4 4 %
SNS pin voltage = 0.1V -15 15 %
OL_ON_EN_CHx =1,
ISNS_SCALE_CHx = 8		 SNS pin voltage = 0.04V -10.5 10.5 %
SNS pin voltage = 0.01V -37.5 37.5 %
ADCTSNS TSNS ADC output code TJ = 25°C  Includes buffer gain 474
TSNSACC TSNS measurement accuracy -17 17 °C
ADCVSNS ADC code of output voltage measurement VOUTx = 13.5V, referenced to device GND Includes buffer gain 459
VSNSACC VOUT SNS (VSNS) measurement accuracy -5 5 %
ADCVBBSNS ADC code of VBB voltage measurement VBB = 13.5V, referenced to device GND Includes buffer gain 452
VBBSNSACC VBB SNS (VBBSNS) measurement accuracy -5 5 %
OVERCURRENT PROTECTION CHARACTERISTICS
IOCP_RANGE Overcurrent protection threshold, immediate shutdown - range di/dt = 2A/µs 10 55 A
IOCP Overcurrent protection threshold, immediate shutdown di/dt  = 2A/µs
TJ = –40°C to 150°C		 ILIMIT_SET_CHx = 0x0
 10 A
ILIMIT_SET_CHx = 0x1
 12.5 A
ILIMIT_SET_CHx = 0x2
 15 A
ILIMIT_SET_CHx = 0x3
 17.5 A
ILIMIT_SET_CHx = 0x4
 20 A
ILIMIT_SET_CHx = 0x5
 22.5 A
ILIMIT_SET_CHx = 0x6
 25 A
ILIMIT_SET_CHx = 0x7
 32.5 A
ILIMIT_SET_CHx = 0x8
 40 A
ILIMIT_SET_CHx = 0x9
 47.5 A
ILIMIT_SET_CHx = 0xA
 55 A
IOCP_RANGE,PARALLEL Overcurrent protection threshold, immediate shutdown - range in parallel mode di/dt = 2A/µs
PARALLEL_12 = 1		 10 40 A
IOCP_RETRY_FLBK Overcurrent protection foldback threshold, immediate shutdown mode Only applicable for CAP_CHRG_CHx = 00 and IOCP > 47.5A, nRETRY > 7, di/dt  = 2A/µs, TJ = –40°C to 150°C 47.5 A
tOCP_DETECT Immediate shutdown detection time TJ = -40°C to 150°C From IOUT = IOCP to IOCP detection ROUT = 150% of IOCP , LIN = LOUT= 0nH 0.3 1.5 us
tOCP_TOFF Immediate shutdown turn off time TJ = -40°C to 150°C From IOCP detection to 10% of VOUTx
ROUT = 150% of IOCP , LIN = LOUT = 0nH		 7.5 us
IOCP_TEMP_COMP IOCP high temperature compensation TJ ≥ 85°C, IOCP ≥ 47.5A  -0.375 %/°C
CAP CHRG CURRENT LIMITATION 
ICL_Reg Current regulation mode current in inrush period TJ = –40°C to 150°C  dI/dt  < 0.01A/ms INRUSH_LIMIT_CHx = 0 0.81 1.67 2.485 A
INRUSH_LIMIT_CHx = 1 2 A
INRUSH_LIMIT_CHx = 2 2.4 A
INRUSH_LIMIT_CHx = 3 2.8 A
INRUSH_LIMIT_CHx = 4 1.7 3.3 5 A
INRUSH_LIMIT_CHx = 5 3.6 A
INRUSH_LIMIT_CHx = 6 4.2 A
INRUSH_LIMIT_CHx = 7 5.5 A
INRUSH_LIMIT_CHx = 8 6.8 A
INRUSH_LIMIT_CHx = 9 8.1 A
INRUSH_LIMIT_CHx = A 9.5 A
INRUSH_LIMIT_CHx = B 11 A
INRUSH_LIMIT_CHx = C 12 A
CAPACITIVE CHARGING
tINRUSH_RANGE Inrush duration settings range INRUSH_DURATION_CHx range 0 100 ms
FAULT CHARACTERISTICS
IOL_OFF Off state open-load (OL) detection internal pull-up current Switch disabled, OL_OFF_EN_CHx = enabled  OL_PULLUP_STR=00 20.1 26.5 100 µA
OL_PULLUP_STR=01 48.1 60 126 µA
OL_PULLUP_STR=10 103.2 127 208 µA
OL_PULLUP_STR=11 213 260 348 µA
RSHRT_VBB Off state short to VBB detection pulldown resistance Channel disabled, off-state short_VBB diagnostics enabled 5.5 6.8 8 kΩ
VOL_OFF_TH Off state Open-load (OL) detection voltage Channel Disabled, off-state open load diagnostics enabled, VOUTx 1.9 2.5 2.95 V
TABS Thermal shutdown 155 180 205 °C
TOTW Thermal shutdown warning 130 150 170 °C
TREL Relative thermal shutdown temperature 60 °C
THYS Thermal shutdown hysteresis 20 25 30 °C
nRETRY, INT Number of retry cycles before IOCP = IOCP_RETRY_FLBK Only applicable for CAP_CHRG_CHx = 00 and IOCP > 47.5A 7
tRETRY Retry time Time from fault shutdown until switch re-enable (thermal shutdown or overcurrent). PWM will wait until next cycle to come back on 2 ms
tWAKE_SIG WAKE_SIG / FLT pin indication for LPM exit 100 μs
TIMING CHARACTERISTICS
OSCACC Oscillator accuracy -10 10 %
PWMFREQ PWM Frequency PWM_EN = 1 PWM_FREQ_CHx = 101 372 425 478 Hz
LOW POWER MODE CHARACTERISTICS
RON,LPM_AUTO RON in AUTO_LPM mode TJ = –40°C to 105°C 9 18 mΩ
RON,LPM_MAN RON in MANUAL_LPM mode  TJ = –40°C to 105°C 28 58 mΩ
IENTRY_LPM_AUTO IOUT current to enter AUTO_LPM state TJ = –40°C to 105°C 0.95 A
IEXIT_LPM_AUTO IOUT current to exit AUTO_LPM state TJ = –40°C to 105°C 1.05 A
ISCP_LPM_AUTO Short-circuit detection threshold for AUTO_LPM state TJ = –40°C to 105°C 13.7 A
IEXIT_LPM_MAN IOUTx threshold for MANUAL_LPM exit Current ramp at 1mA/µs TJ = –40°C to 85°C MAN_LPM_EXIT_CURR_CHx = 00 365 530 690 mA
MAN_LPM_EXIT_CURR_CHx = 01 500 700 915 mA
MAN_LPM_EXIT_CURR_CHx = 10 114 165 236 mA
MAN_LPM_EXIT_CURR_CHx = 11 240 350 460 mA
ISCP_LPM_MAN Load current when the channel detects a short circuit di/dt = 5mA/µs LPM exit test mode 4.0 A
tRETRY_LPM Retry time in LPM state 5 µs
tSTBY_LPM_AUTO standby time before enter AUTO_LPM state IOUTx ≤ IENTRY_LPM_AUTO 20 ms
tLPM_ENTRY Time to enter LPM state 200 µs
tWAKE IEXIT_LPM_MAN detection time 5 µs
tSLEW Time to slew on the main FET after IEXIT_LPM_MAN 200 µs
IQ,VDD,LPM_MAN VDD quiescent current in MANUAL_LPM VDD = 5.0V, IOUTx = 0A,
TJ = –40°C to 85°C
 both channels OFF 9 18 µA
one channel ON 12.3 21.6 µA
both channels ON 15.6 23 µA
IQ,VDD,LPM_AUTO VDD quiescent current in AUTO_LPM VDD = 5.0V, IOUTx = 0A,
TJ = –40°C to 85°C		 both channels OFF 9 18 µA
one channel ON 12.3 21.6 µA
both channels ON 15.6 23 µA
IQ,VBB,LPM_MAN VBB quiescent current in MANUAL_LPM VDD = 5.0V, IOUTx = 0A,
TJ = –40°C to 85°C
 both channels OFF 3.72 7 µA
one channel ON 5.1 9.1 µA
both channels ON 6.42 9.5 µA
IQ,VBB,LPM_AUTO VBB quiescent current in AUTO_LPM VDD = 5.0V, IOUTx = 0A,
TJ = –40°C to 85°C		 both channels OFF 10.4 15.5 µA
one channel ON 11 15.8 µA
both channels ON 11.6 16.1 µA
DIGITAL INPUT PIN CHARACTERISTICS
VIH, SPI Input voltage high-level
(SCLK, SDI, CSN)		 3.0V ≤ VDD ≤ 5.5V 0.7 × VVDD V
VIL, SPI Input voltage low-level
(SCLK, SDI, CSN)		 3.0V ≤ VDD ≤ 5.5V 0.3 × VVDD V
RPD,SCLK SCLK Internal pulldown resistor 1.90 2 2.16 MΩ
IIH, SCLK Input current high-level SCLK VDI = 5V VSCLK = 5V 2.5 µA
RPD,SDI SDI Internal pulldown resistor 1.90 2 2.16 MΩ
IIH, SDI Input current high-level SDI VSDI = 5V 2.5 µA
RPU,CSN CSN Internal pullup resistor 85 90 96 kΩ
VIH,DI input voltage high-level DI (version A) 1.65 V
VIL,DI Input voltage low-level 0.8 V
RPD,DI Internal pulldown resistor 772 850 915 kΩ
IIH,DI Input current high-level VDI = 5V 6 µA
VIH,DI1 input voltage high-level DI1 (version B) 1.65 V
VIL,DI1 Input voltage low-level 0.8 V
RPD,DI1 Internal pulldown resistor 772 850 915 kΩ
IIH,DI1 Input current high-level VDI1 = 5V 6 µA
VIH,LHI input voltage high-level LHI (version A) 1.65 V
VIL,LHI Input voltage low-level 0.8 V
RPD,LHI Internal pulldown resistor 772 850 915 kΩ
IIH,LHI Input current high-level VLHI = 5V 6 µA
VIH,DI2 input voltage high-level DI2 (version B) 1.65 V
VIL,DI2 Input voltage low-level 0.8 V
RPD,DI2 Internal pulldown resistor 772 850 915 kΩ
IIH,DI2 Input current high-level VDI2 = 5V 6 µA
DIGITAL OUTPUT PIN CHARACTERISTICS
VOH,SDO Output logic high voltage drop SDO pin current = -2mA 0.2 V
VOL,SDO Output logic low voltage SDO Pin current = 2mA 0.2 V
VOL_FLT Output logic low voltage drop FLT pin current = 4mA 0.55 V