ZHCSTG6A July   2023  – October 2023 TPS25984

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 说明（续）
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Logic Interface
    7. 7.7 Timing Requirements
    8. 7.8 Switching Characteristics
    9. 7.9 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Undervoltage Protection
      2. 8.3.2  Insertion Delay
      3. 8.3.3  Overvoltage Protection
      4. 8.3.4  Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 8.3.4.1 Slew Rate (dVdt) and Inrush Current Control
          1. 8.3.4.1.1 Start-Up Time Out
        2. 8.3.4.2 Steady-State Overcurrent Protection (Circuit-Breaker)
        3. 8.3.4.3 Active Current Limiting During Start-Up
        4. 8.3.4.4 Short-Circuit Protection
      5. 8.3.5  Analog Load Current Monitor (IMON)
      6. 8.3.6  Mode Selection (MODE)
      7. 8.3.7  Parallel Device Synchronization (SWEN)
      8. 8.3.8  Stacking Multiple eFuses for Unlimited Scalability
        1. 8.3.8.1 Current Balancing During Start-Up
      9. 8.3.9  Analog Junction Temperature Monitor (TEMP)
      10. 8.3.10 Overtemperature Protection
      11. 8.3.11 Fault Response and Indication (FLT)
      12. 8.3.12 Power-Good Indication (PG)
      13. 8.3.13 Output Discharge
      14. 8.3.14 FET Health Monitoring
      15. 8.3.15 Single Point Failure Mitigation
        1. 8.3.15.1 IMON Pin Single Point Failure
        2. 8.3.15.2 ILIM Pin Single Point Failure
        3. 8.3.15.3 IREF Pin Single Point Failure
        4. 8.3.15.4 ITIMER Pin Single Point Failure
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Single Device, Standalone Operation
      2. 9.1.2 Multiple Devices, Parallel Connection
      3. 9.1.3 Multiple eFuses, Parallel Connection With PMBus
      4. 9.1.4 Digital Telemetry Using External Microcontroller
    2. 9.2 Typical Application: 12-V, 3.3-kW Power Path Protection in Data Center Servers
      1. 9.2.1 Application
      2. 9.2.2 Design Requirements
      3. 9.2.3 Detailed Design Procedure
      4. 9.2.4 Application Curves
    3. 9.3 Best Design Practices
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient Protection
      2. 9.4.2 Output short-Circuit Measurements
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 静电放电警告
    5. 10.5 术语表
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)

8.3.13 Output Discharge

The device has an integrated output discharge function which discharges the capacitors on the OUT pin using an internal constant current (IQOD) to GND. The output discharge function is activated when the EN/UVLO is held low (VSD(F) < VEN < VUVLO(F)) for a minimum interval (tQOD). The output discharge function helps to rapidly remove the residual charge left on large output capacitors and prevents the bus from staying at some undefined voltage for extended periods of time. The output discharge is disengaged when VOUT < VFB or if the device detects a fault.

The output discharge function can result in excessive power dissipation inside the device leading to an increase in junction temperature (TJ). The output discharge is disabled if the junction temperature (TJ) crosses TSD to avoid long-term degradation of the part.

Note:

In a primary+secondary parallel configuration, TI recommends to hold EN/UVLO voltage below the VUVLO(F) threshold of the secondary device to activate output discharge for all the devices in the chain.