ZHCSPB6D July   2022  – April 2024 TPS1211-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump and Gate Driver Output (VS, PU, PD, BST, SRC)
      2. 8.3.2 Capacitive Load Driving
        1. 8.3.2.1 FET Gate Slew Rate Control
        2. 8.3.2.2 Using Precharge FET - (with TPS12111-Q1 Only)
      3. 8.3.3 Overcurrent and Short-Circuit Protection
        1. 8.3.3.1 Overcurrent Protection with Auto-Retry
        2. 8.3.3.2 Overcurrent Protection with Latch-Off
        3. 8.3.3.3 Short-Circuit Protection
      4. 8.3.4 Analog Current Monitor Output (IMON)
      5. 8.3.5 Overvoltage (OV) and Undervoltage Protection (UVLO)
      6. 8.3.6 Remote Temperature Sensing and Protection (DIODE)
      7. 8.3.7 Output Reverse Polarity Protection
      8. 8.3.8 TPS1211x-Q1 as a Simple Gate Driver
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving Zonal Controller Loads on 12-V Line in Power Distribution Unit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application: Reverse Polarity Protection with TPS12110-Q1
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 静电放电警告
    5. 10.5 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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8.3.3 Overcurrent and Short-Circuit Protection

TPS1211x-Q1 has two-level current protection.

  • Adjustable overcurrent protection (IOC) threshold and response time (tOC),
  • Adjustable short-circuit threshold (ISC) with internally fixed fast response (tSC).
Figure 8-9 shows the I-T characteristics.
TPS1211-Q1 Overcurrent and Short-Circuit Protection Characteristics Figure 8-9 Overcurrent and Short-Circuit Protection Characteristics

The device senses the voltage across the external current sense resistor through CS+ and CS–. Set the overcurrent protection threshold using an external resistor RIWRN across IWRN and GND. Use Equation 6 to calculate the required RIWRN value.

Equation 6. TPS1211-Q1

Where, RSET is the resistor connected across CS+ and VS, RSNS is the current sense resistor and IOC is the overcurrent level.

Note: For short-circuit protection feature only, connect IWRN pin to GND and select RISCP resistor as per Section 8.3.3.3.

For overcurrent protection feature only, connect ISCP pin to CS– pin directly and select RIWRN resistor as per Equation 6.

In case of overcurrent or short-circuit event, TPS12111-Q1 controller turns off main FET by pulling PD low but state of pre-charge FET drive (G) is not changed.