ZHCSAA3B September   2012  – September 2015 TPA3112D1-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Characteristics
    6. 6.6 DC Characteristics
    7. 6.7 AC Characteristics
    8. 6.8 AC Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 DC Detect
      2. 7.3.2 Short-Circuit Protection and Automatic Recovery Feature
      3. 7.3.3 Thermal Protection
      4. 7.3.4 GVDD Supply
    4. 7.4 Device Functional Modes
      1. 7.4.1 Gain Setting Through GAIN0 and GAIN1 Inputs
      2. 7.4.2 SD Operation
      3. 7.4.3 PLIMIT
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Class-D Operation
        2. 8.2.2.2  TPA3112D1-Q1 Modulation Scheme
        3. 8.2.2.3  Ferrite Bead Filter Considerations
        4. 8.2.2.4  Efficiency: LC Filter Required With the Traditional Class-D Modulation Scheme
        5. 8.2.2.5  When to Use an Output Filter for EMI Suppression
        6. 8.2.2.6  Input Resistance
        7. 8.2.2.7  Input Capacitor, CI
        8. 8.2.2.8  BSN and BSP Capacitors
        9. 8.2.2.9  Differential Inputs
        10. 8.2.2.10 Using Low-ESR Capacitors
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage AVCC, PVCC –0.3 30 V
VI Interface pin voltage SD, FAULT,GAIN0, GAIN1, AVCC (Pin 14) (2) –0.3 VCC + 0.3 V
< 10 V/ms
PLIMIT –0.3 GVDD + 0.3 V
INN, INP –0.3 6.3 V
RL Minimum Load Resistance BTL 3.2
Continuous total power dissipation See Thermal Information Table
TA Operating free-air temperature range –40 125 °C
TJ Operating junction temperature range(3) –40 150 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operations of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The voltage slew rate of these pins must be restricted to no more than 10 V/ms. For higher slew rates, use a 100 kΩ resister in series with the pins, per application note SLUA626.
(3) The TPA3112D1-Q1 incorporates an exposed thermal pad on the underside of the chip. This acts as a heatsink, and it must be connected to a thermally dissipating plane for proper power dissipation. Failure to do so may result in the device going into thermal protection shutdown. See TI Technical Briefs SCBA017 and SLUA271 for more information about using the QFN thermal pad. See TI Technical Brief SLMA002 for more information about using the HTQFP thermal pad.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±4000 V
Charged-device model (CDM), per AEC Q100-011 ±250
Machine model (MM) per JESD22-A115 ±200
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage PVCC, AVCC 8 26 V
VIH High-level input voltage SD, GAIN0, GAIN1 2 V
VIL Low-level input voltage SD, GAIN0, GAIN1 0.8 V
VOL Low-level output voltage FAULT, RPULLUP = 100 kΩ, VCC = 26 V 0.8 V
IIH High-level input current SD, GAIN0, GAIN1, VI = 2, VCC = 18 V 50 µA
IIL Low-level input current SD, GAIN0, GAIN1, VI = 0.8 V, VCC = 18 V 5 µA
TA Operating free-air temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1)(2) TPA3112D1-Q1 UNIT
PWP (HTSSOP)
28 PINS
RθJA Junction-to-ambient thermal resistance 30.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 33.5 °C/W
RθJB Junction-to-board thermal resistance 17.5 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 7.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator

6.5 DC Characteristics

TA = –40°C to 125°C, VCC = 24 V, RL = 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
| VOS | Class-D output offset voltage (measured differentially) VI = 0 V, Gain = 36 dB 1.5 15 mV
ICC Quiescent supply current SD = 2 V, no load, PVCC = 21 V 40 mA
ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load, PVCC = 21 V 400 µA
rDS(on) Drain-source on-state resistance IO = 500 mA,
TJ = 25°C		 High side 240 mΩ
Low side 240
G Gain GAIN1 = 0.8 V GAIN0 = 0.8 V 19 20 21 dB
GAIN0 = 2 V 25 26 27
GAIN1 = 2 V GAIN0 = 0.8 V 31 32 33 dB
GAIN0 = 2 V 35 36 37
tON Turn-on time SD = 2 V 10 ms
tOFF Turn-off time SD = 0.8 V 2 μs
GVDD Gate Drive Supply IGVDD = 2 mA 6.5 6.9 7.3 V

6.6 DC Characteristics

TA = –40°C to 125°C, VCC = 12 V, RL = 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
| VOS | Class-D output offset voltage (measured differentially) VI = 0 V, Gain = 36 dB 1.5 15 mV
ICC Quiescent supply current SD = 2 V, no load, PVCC = 12 V 20 mA
ICC(SD) Quiescent supply current in shutdown mode SD = 0.8 V, no load, PVCC = 12 V 200 µA
rDS(on) Drain-source on-state resistance IO = 500 mA,
TJ = 25°C		 High side 240 mΩ
Low side 240
G Gain GAIN1 = 0.8 V GAIN0 = 0.8 V 19 20 21 dB
GAIN0 = 2 V 25 26 27
GAIN1 = 2 V GAIN0 = 0.8 V 31 32 33 dB
GAIN0 = 2 V 35 36 37
tON Turn-on time SD = 2 V 10 ms
tOFF Turn-off time SD = 0.8 V 2 μs
GVDD Gate Drive Supply IGVDD = 2 mA 6.5 6.9 7.3 V
PLIMIT Output Voltage maximum under PLIMIT control VPLIMIT = 2.0 V; VI = 6-V differential 6.75 7.90 8.75 V

6.7 AC Characteristics

TA = –40°C to 125°C, VCC = 24 V, RL = 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
KSVR Power Supply ripple rejection 200 mVPP ripple from 20 Hz–1 kHz,
Gain = 20 dB, inputs AC-coupled to AGND		 –70 dB
PO Continuous output power THD+N ≤ 0.1%, f = 1 kHz, VCC = 24 V 25 W
THD+N Total harmonic distortion + noise VCC = 24 V, f = 1 kHz, PO = 12 W (half-power) <0.05 %
Vn Output integrated noise 20 Hz to 22 kHz, A-weighted filter, Gain = 20 dB 65 µV
–80 dBV
Crosstalk VO = 1 Vrms, Gain = 20 dB, f = 1 kHz –70 dB
SNR Signal-to-noise ratio Maximum output at THD+N < 1%, f = 1 kHz,
Gain = 20 dB, A-weighted		 102 dB
fOSC Oscillator frequency 250 310 350 kHz
Thermal trip point 150 °C
Thermal hysteresis 15 °C

6.8 AC Characteristics

TA = –40°C to 125°C, VCC = 12 V, RL = 8 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
KSVR Supply ripple rejection 200 mVPP ripple from 20 Hz–1 kHz,
Gain = 20 dB, inputs AC-coupled to AGND		 –70 dB
PO Continuous output power THD+N ≤ 10%, f = 1 kHz , RL = 8 Ω 10 W
PO Continuous output power THD+N ≤ 10%, f = 1 kHz , RL = 4 Ω 20 W
THD+N Total harmonic distortion + noise RL = 8 Ω, f = 1 kHz, PO = 5 W (half-power) <0.06 %
Vn Output integrated noise 20 Hz to 22 kHz, A-weighted filter, Gain = 20 dB 65 µV
–80 dBV
Crosstalk Po = 1 W, Gain = 20 dB, f = 1 kHz –70 dB
SNR Signal-to-noise ratio Maximum output at THD+N < 1%, f = 1 kHz,
Gain = 20 dB, A-weighted		 102 dB
fOSC Oscillator frequency 250 310 350 kHz
Thermal trip point 150 °C
Thermal hysteresis 15 °C

6.9 Typical Characteristics

All measurements taken at 1 kHz, unless otherwise noted. The TPA3112D2 EVM (which is available at ti.com) made these measurements.
TPA3112D1-Q1 g001_los618.gif
Figure 1. Total Harmonic Distortion vs Frequency
TPA3112D1-Q1 g003_los618.gif
Figure 3. Total Harmonic Distortion vs Frequency
TPA3112D1-Q1 G005_LOS654.gif
Note: Lighter colored lines represent thermally limited region.
Figure 5. Total Harmonic Distortion + Noise vs Output Power
TPA3112D1-Q1 G007_LOS654.gif
Note: Lighter color represents thermally limited region.
Figure 7. Maximum Output Power vs Plimit Voltage
TPA3112D1-Q1 g009_los618.gif
Figure 9. Gain/Phase vs Frequency
TPA3112D1-Q1 G013_LOS654.gif
Note: Lighter color represents thermally limited region.
Figure 11. Efficiency vs Output Power
TPA3112D1-Q1 G015_LOS654.gif
Figure 13. Supply Current vs Total Output Power
TPA3112D1-Q1 g002_los618.gif
Figure 2. Total Harmonic Distortion vs Frequency
TPA3112D1-Q1 G004_LOS654.gif
Figure 4. Total Harmonic Distortion + Noise vs Output Power
TPA3112D1-Q1 G006_LOS654.gif
Figure 6. Total Harmonic Distortion + Noise vs Output Power
TPA3112D1-Q1 G008_LOS654.gif
Figure 8. Output Power vs Plimit Voltage
TPA3112D1-Q1 G012_LOS654.gif
Note: Lighter color represents thermally limited region.
Figure 10. Efficiency vs Output Power
TPA3112D1-Q1 G014_LOS654.gif
Note: Lighter color represents thermally limited region.
Figure 12. Supply Current vs Total Output Power
TPA3112D1-Q1 g016_los618.gif
Figure 14. Supply Ripple Rejection Ratio vs Frequency