ZHCSQE5C April 2022 – February 2024 TMUX6236
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
The TMUX6236 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 6-9 shows the setup used to measure charge injection from source (Sx) to drain (D).