ZHCSE08D May   2015  – January 2020 TMP107

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
    1.     Device Images
      1.      典型应用
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Digital Temperature Output
      2. 7.3.2 Temperature Limits and Alert
        1. 7.3.2.1 ALERT1, ALERT2, R1, and R2 Pins
      3. 7.3.3 SMAART Wire™ Communication Interface
        1. 7.3.3.1 Communication Protocol
          1. 7.3.3.1.1 Calibration Phase
          2. 7.3.3.1.2 Command and Address Phase
            1. 7.3.3.1.2.1 Global or Individual (G/nI) Bit
            2. 7.3.3.1.2.2 Read/Write (R/nW) Bit
            3. 7.3.3.1.2.3 Command or Address (C/nA) Bit:
          3. 7.3.3.1.3 Register Pointer Phase
          4. 7.3.3.1.4 Data Phase
        2. 7.3.3.2 SMAART Wire™ Operations
          1. 7.3.3.2.1 Command Operations
            1. 7.3.3.2.1.1 Address Initialize
            2. 7.3.3.2.1.2 Last Device Poll
            3. 7.3.3.2.1.3 Global Software Reset
          2. 7.3.3.2.2 Address Operations
            1. 7.3.3.2.2.1 Individual Write
            2. 7.3.3.2.2.2 Individual Read
            3. 7.3.3.2.2.3 Global Write
            4. 7.3.3.2.2.4 Global Read
    4. 7.4 Device Functional Modes
      1. 7.4.1 Continuous-Conversion Mode
      2. 7.4.2 Shutdown Mode
      3. 7.4.3 One-Shot Mode
    5. 7.5 Programming
      1. 7.5.1 EEPROM
      2. 7.5.2 EEPROM Operations
        1. 7.5.2.1 EEPROM Unlock
        2. 7.5.2.2 EEPROM Lock
        3. 7.5.2.3 EEPROM Programming
        4. 7.5.2.4 EEPROM Acquire or Read
    6. 7.6 Register Map
      1. 7.6.1 Temperature Register (address = 0h) [reset = 0h]
        1. Table 4. Temperature Register Field Descriptions
      2. 7.6.2 Configuration Register (address = 1h) [reset = A000h]
        1. Table 5. Configuration Register Field Descriptions
      3. 7.6.3 High Limit 1 Register (address = 2h) [reset = 7FFCh]
        1. Table 7. High Limit 1 Register Field Descriptions
      4. 7.6.4 Low Limit 1 Register (address = 3h) [reset = 8000h]
        1. Table 8. Low Limit 1 Register Field Descriptions
      5. 7.6.5 High Limit 2 Register (address = 4h) [reset = 7FFCh]
        1. Table 9. High Limit 2 Register Field Descriptions
      6. 7.6.6 Low Limit 2 Register (address = 5h) [reset = 8000h]
        1. Table 10. Low Limit 2 Register Field Descriptions
      7. 7.6.7 EEPROM n Register (where n = 1 to 8) (addresses = 6h to Dh) [reset = 0h]
        1. Table 11. EEPROM Register bits
      8. 7.6.8 Die ID Register (address = Fh) [reset = 1107h]
        1. Table 12. Die ID Register Field Descriptions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Connecting Multiple Devices
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Voltage Drop Effect
          2. 8.2.1.2.2 EEPROM Programming Current
          3. 8.2.1.2.3 Power Savings
          4. 8.2.1.2.4 Accuracy
          5. 8.2.1.2.5 Electromagnetic Interference (EMI)
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Connecting ALERT1 and ALERT2 Pins
      3. 8.2.3 ALERT1 and ALERT2 Pins Used as General-Purpose Output (GPO)
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

At TA = –55°C to 125°C and V+ = +1.7 V to +5.5 V (unless otherwise noted). Typical values at TA = 25°C and V+ = 3.3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TEMPERATURE INPUT
Temperature range –55 125 °C
Temperature resolution 0.015625 °C
Temperature accuracy (error) –20°C to +70°C; one-shot mode, bus inactive ±0.125 ±0.4 °C
–40°C to +100°C; one-shot mode, bus inactive ±0.125 ±0.55
–55°C to +125°C; one-shot mode, bus inactive ±0.5 ±0.7
ADC resolution 14 Bits
DIGITAL OUTPUT (ALERT1, ALERT2)
VOL Low-level output voltage IOUT = –1 mA 0 0.02 0.4 V
IOH High-level output leakage current VO = V+ 0.1 1 μA
RPU Pullup resistors 75 100 125 kΩ
DIGITAL INPUT/OUTPUT (I/O1, I/O2)
VIH High-level input voltage 0.7 (V+) (V+) + 0.3 V
VIL Low-level input voltage –0.3 0.3 (V+) V
IIN Input current 0 V < VIN < (V+) + 0.3 V –1 1 μA
VOL Low-level output voltage IOUT = –1 mA 0 0.1 0.4 V
VOH High-level output voltage IOUT = 1 mA (V+) – 0.4 (V+) – 0.1 V+ V
Short-circuit current Short-circuit I/O1 and I/O2 to ground or V+,
V+ = 5 V		 60 mA
DEVICE TIMING
Conversion time One-shot mode 12 15 18 ms
Conversion rate Programmable 1/16 62 Conv/s
Device timeout time Any communication 35 40 ms
Global address-initialize command 1 1.25 s
EEPROM
Programming time V+ > 1.8 V 7 ms
Number of writes V+ > 1.8 V 1000 100,000 Times
Data retention time 10 Years
POWER SUPPLY
V+ Operating supply range 1.7 3.3 5.5 V
EEPROM write 1.8 3.3 5.5 V
IQ Quiescent current ADC conversion on,
SMAART wire bus inactive		 200 400 μA
ADC conversion on, SMAART wire bus active (bus baud rate = 57.6 kBd) 300
ADC conversion off, SMAART wire bus active (bus baud rate = 57.6 kBd) 100
1 conversion per second average,
SMAART wire bus inactive		 16 35
EEPROM write (ADC conversion off) 400
ISD Shutdown current SMAART wire bus inactive (I/O1, I/O2 = V+) 3.8 10 μA
Power-on reset voltage Supply voltage rising 1.4 V