SCES590E JULY   2004  – March 2018 SN74AUP1G06

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Logic Diagram
  4. 4 Revision History
  5. 5 Pin Functions and Configurations
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Switching Characteristics, CL = 5 pF
    7. 6.7  Switching Characteristics, CL = 10 pF
    8. 6.8  Switching Characteristics, CL = 15 pF
    9. 6.9  Switching Characteristics
    10. 6.10 Operating Characteristics
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 CMOS Open-Drain Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Clamp Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-voltage Tolerant Inputs
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DPW|5
  • DBV|5
  • DSF|6
  • DCK|5
  • DRL|5
  • YFP|4
  • DRY|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.3.1 CMOS Open-Drain Outputs

The open-drain output allows the device to sink current to GND but not to source current from VCC. When the output is not actively pulling the line low, it will go into a high impedance state (3-state). This allows the device to be used for a wide variety of applications, including up-translation and down-translation, as the output voltage can be determined by an external pullup.

The drive capability of this device creates fast edges into light loads so routing and load conditions should be considered to prevent ringing. Additionally, the outputs of this device are capable of driving larger currents than the device can sustain without being damaged. It is important for the power output of the device to be limited to avoid thermal runaway and damage due to over-current. The electrical and thermal limits defined the in the Absolute Maximum Ratings must be followed at all times.