ZHCSNH8B July   2021  – November 2021 INA823

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Gain-Setting Function
        1. 8.3.1.1 Gain Drift
      2. 8.3.2 Input Common-Mode Voltage Range
      3. 8.3.3 Input Protection
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Input Bias Current Return Path
    2. 9.2 Typical Applications
      1. 9.2.1 Resistive-Bridge Pressure Sensor
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Supporting High Common-Mode Voltage in PLC Input Modules
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 PSpice® for TI
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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订购信息

Gain Drift

The stability and temperature drift of the external gain setting resistor (RG) also affects gain. The contribution of RG to gain accuracy and drift is determined from Equation 2.

The best gain drift of 5 ppm/℃ (maximum) is achieved when the INA823 uses G = 1 V/V without RG connected. In this case, gain drift is limited by the slight mismatch of the temperature coefficient of the integrated 50-kΩ resistors in the differential amplifier (A3).

At gains greater than 1 V/V, gain drift increases as a result of the individual drift of the 50-kΩ resistors in the feedback of A1 and A2 relative to the drift of the external gain resistor (RG.) The low temperature coefficient of the internal feedback resistors significantly improves the overall temperature stability of applications using gains greater than 1 V/V over alternate options.