ZHCSIM8C August   2018  – July 2019 INA821

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      INA821 简化内部原理图
      2.      输入阶段失调电压漂移的典型分布
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics: Table of Graphs
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Setting the Gain
        1. 8.3.1.1 Gain Drift
      2. 8.3.2 EMI Rejection
      3. 8.3.3 Input Common-Mode Range
      4. 8.3.4 Input Protection
      5. 8.3.5 Operating Voltage
      6. 8.3.6 Error Sources
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Reference Pin
      2. 9.1.2 Input Bias Current Return Path
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Other Application Examples
      1. 9.3.1 Resistance Temperature Detector Interface
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.4 Thermal Information

THERMAL METRIC(1) INA821 UNIT
D (SOIC) DGK  (VSSOP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 119.6 215.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 66.3 66.3 °C/W
RθJB Junction-to-board thermal resistance 61.9 97.8 °C/W
ψJT Junction-to-top characterization parameter 20.5 10.5 °C/W
ψJB Junction-to-board characterization parameter 61.4 96.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.