ZHCSAB9E September 2012 – June 2019 DP83848-EP
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VIH | Input high voltage | Nominal VCC | 2 | V | ||
| VIL | Input low voltage | 0.8 | V | |||
| IIH | Input high current | VIN = VCC | 10 | µA | ||
| IIL | Input low current | VIN = GND | 10 | µA | ||
| VOL | Output low voltage | IOL = 4 mA | 0.4 | V | ||
| VOH | Output high voltage | IOH = –4 mA | VCC – 0.5 | V | ||
| IOZ | Tri-state leakage | VOUT = VCC
VOUT = GND |
±10 | µA | ||
| VTPTD_100 | 100M transmit voltage | 0.89 | 1 | 1.15 | V | |
| VTPTDsym | 100M transmit voltage symmetry | –2% | 2% | |||
| VTPTD_10 | 10M transmit voltage | 2.17 | 2.5 | 2.8 | V | |
| CIN1 | CMOS input capacitance | 5 | pF | |||
| COUT1 | CMOS output capacitance | 5 | pF | |||
| SDTHon | 100BASE-TX signal detect turnon threshold | 1000 | mV diff pk-pk | |||
| SDTHoff | 100BASE-TX signal detect turnoff threshold | 200 | mV diff pk-pk | |||
| VTH1 | 10BASE-T receive threshold | 585 | mV | |||
| Idd100 | 100BASE-TX (full duplex) | 81 | mA | |||
| Idd10 | 10BASE-T (full duplex) | 92 | mA | |||
| Idd | Power down mode | 14 | mA | |||