ZHCSK93 September   2019 DLP5534-Q1

ADVANCE INFORMATION for pre-production products; subject to change without notice.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      DLP5534-Q1 DLP芯片组系统方框图
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions – Connector Pins
    2.     Pin Functions – Test Pads
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  Storage Conditions
    3. 6.3  ESD Ratings
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Thermal Information
    6. 6.6  Electrical Characteristics
    7. 6.7  Timing Requirements
    8. 6.8  Switching Characteristics
    9. 6.9  System Mounting Interface Loads
    10. 6.10 Physical Characteristics of the Micromirror Array
    11. 6.11 Micromirror Array Optical Characteristics
    12. 6.12 Window Characteristics
    13. 6.13 Chipset Component Usage Specification
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Sub-LVDS Data Interface
      2. 7.3.2 Low Speed Interface for Control
      3. 7.3.3 DMD Voltage Supplies
      4. 7.3.4 Asynchronous Reset
      5. 7.3.5 Temperature Sensing Diode
        1. 7.3.5.1 Temperature Sense Diode Theory
    4. 7.4 System Optical Considerations
      1. 7.4.1 Numerical Aperture and Stray Light Control
      2. 7.4.2 Pupil Match
      3. 7.4.3 Illumination Overfill
    5. 7.5 Micromirror Array Temperature Calculation
    6. 7.6 Micromirror Landed-On/Landed-Off Duty Cycle
      1. 7.6.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application Overview
      2. 8.2.2 Reference Design
      3. 8.2.3 Application Mission Profile Consideration
      4. 8.2.4 Illumination Mission Profile Considerations
  9. Power Supply Recommendations
    1. 9.1 Power Supply Power-Up Procedure
    2. 9.2 Power Supply Power-Down Procedure
    3. 9.3 Power Supply Sequencing Requirements
  10. 10Layout
    1. 10.1 Layout Guidelines
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 器件命名规则
      2. 11.1.2 器件标记
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 DMD 处理
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN NOM MAX UNIT
SUPPLY VOLTAGE RANGE(3)
VDD Supply voltage for LVCMOS core logic
Supply voltage for LPSDR low-speed interface
1.7 1.8 1.95 V
VDDI Supply voltage for SubLVDS receivers 1.7 1.8 1.95 V
VOFFSET Supply voltage for HVCMOS and micromirror electrode(4) 8.25 8.5 8.75 V
VBIAS Supply voltage for mirror electrode 15.5 16 16.5 V
VRESET Supply voltage for micromirror electrode –9.5 –10 –10.5 V
| VDDI–VDD | Supply voltage delta (absolute value)(5) 0.3 V
| VBIAS–VOFFSET | Supply voltage delta (absolute value)(6) 8.75 V
CLOCK FREQUENCY
ƒclock Clock frequency for low speed interface LS_CLK 120 MHz
ƒclock Clock frequency for high speed interface DCLK(7) 600 MHz
Duty cycle distortion DCLK 44% 56%
SUBLVDS INTERFACE(7)
| VID | SubLVDS input differential voltage (absolute value,
see Figure 6, Figure 7)
150 250 350 mV
VCM Common mode voltage (see Figure 6, Figure 7) 700 900 1100 mV
VSUBLVDS SubLVDS voltage (see Figure 6, Figure 7) 575 1225 mV
ZLINE Line differential impedance (PWB/trace) 90 100 110 Ω
ZIN Internal differential termination resistance (see Figure 8) 80 100 120 Ω
TEMPERATURE DIODE
ITEMP_DIODE Max current source into Temperature Diode(8) 120 µA
ENVIRONMENTAL
TARRAY Operating DMD array temperature(9) –40 105 °C
ILLsub-385nm Illumination, wavelength < 385 nm 2 mW/cm2
ILL385-to-395nm Illumination, 385 nm < wavelength < 395 nm 250 mW/cm2
ILL395-to-400nm Illumination, 395 nm < wavelength < 400 nm 800 mW/cm2
ILL400-to-420nm Illumination, 400 nm < wavelength < 420 nm 8 W/cm2
ILLVIS Illumination, 420 nm < wavelength < 800 nm Thermally limited(10) W/cm2
ILLOVERFILL Illumination overfill maximum heat load in areas shown in Figure 1(11) TARRAY ≤ 75°C 40 mW/mm2
Illumination overfill maximum heat load in areas shown in Figure 1(11) TARRAY > 75°C 29
The following power supplies are all required to operate the DMD: VDD, VDDI, VOFFSET, VBIAS, and VRESET. All VSS connections are also required.
Recommended Operating Conditions are applicable after the DMD is installed in the final product.
All voltage values are with respect to the ground pins (VSS).
VOFFSET supply transients must fall within specified max voltages.
To prevent excess current, the supply voltage delta |VDDI – VDD| must be less than the specified limit.
To prevent excess current, the supply voltage delta |VBIAS – VOFFSET| must be less than the specified limit.
Refer to the SubLVDS timing requirements in Timing Requirements.
Temperature Diode is to allow accurate measurement of the DMD array temperature during operation.
DMD active array temperature can be calculated as shown in Micromirror Array Temperature Calculation section.  Additionally, the DMD array temperature is monitored in the system using the TMP411-Q1 and DLPC230-Q1 as shown in the system block diagram.
Limited by the resulting micromirror array temperature. Refer to the calculation example in Micromirror Array Temperature Calculation section.
The active area of the DLP5534-Q1 device is surrounded by an aperture on the inside of the DMD window surface that masks structures of the DMD device assembly from normal view. The aperture is sized to anticipate several optical conditions. Overfill light illuminating the area outside the active array can scatter and create adverse effects to the performance of an end application using the DMD. The illumination optical system should be designed to minimize light flux incident outside the active array. Depending on the particular system's optical architecture and assembly tolerances, the amount of overfill light on the outside of the active array may cause system performance degradation.
DLP5534-Q1 illum-limits.gifFigure 1. Illumination Overfill Diagram